US5018159A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Divided electrode type semiconductor laser device
Assignee: Mitsubishi Chemical Corp
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Filing: 1989-11-22
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Granted: 1991-05-21
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Expires: 2009-11-22
Abstract
Abstract Disclosed is a divided electrode type semiconductor layer device designed to improve the separation of electrodes without reducing the amount of doping for carrier injection layers. A double-hetero-structure is formed on a semi-insulating substrate, and at least two pairs of carrier injection clad layers are thereafter buried like lands while a high-resistance portion is left between the carrier injection clad layers to electrically separate these layers. The electrodes are respectively formed on the separated carrier injection layers.
Inventors
- 👤 Yoshihiro Suzuki
- 👤 Hiroyoshi Yajima
- 👤 Junichi Shimada
- 👤 Kenji Shimoyama
- 👤 Hideki Gotoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:24
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0425; H01S5/04254; H01S5/20; H01S5/22; H01S5/227
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
90 words
A divided electrode type semiconductor laser device, comprising: a substrate; a pair of carrier injection clad layers; cap layers disposed on each one of said pair of carrier injection layers respectively, each of said cap layers having an electrode thereon; an active layer disposed between said carrier injection clad layers so as to form a lateral junction type buried semiconductor laser in which said carrier injection clad layers are buried, said active layer comprising a resonant cavity, and a high-resistance layer separating said carrier injection clad layers from each other.
Claim 2
Dependent Claim
90 words
A divided electrode type semiconductor laser device, comprising: a substrate; a pair of carrier injection clad layers; cap layers disposed on each one of said pair of carrier injection layers respectively, each of said cap layers having an electrode thereon; an active layer disposed between said carrier injection clad layers so as to form a lateral junction type buried semiconductor laser in which said carrier injection clad layers are buried, said active layer comprising a resonant cavity, and a high-resistance layer separating said carrier injection clad layers from each other.
Claim 3
Dependent Claim
18 words
A laser device according to claim 1, in which said high-resistance layer is an undoped AlGaAs clad layer.
Claim 4
Dependent Claim
22 words
A laser device according to claim 1, in which said carrier injection clad layer is a p-type or n-type AlGaAs clad layer.
Claim 5
Dependent Claim
19 words
A laser device according to claim 1, in which GaAs cap layers are formed on the carrier injection layer.
References Cited (Backward Citations)
JPS60235491A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |