High frequency IC power amplifier

Claim 2

An integrated semiconductor arrangement comprising a high-frequency power amplifier stage which comprises: first and second field-effect transistors having first connection means to influence the output power by influencing the unit gate width of the amplifier stage, second connection means to influence the value of the input capacitance of the amplifier stage, means to ensure the feedback of direct current to ground, and D.C. biasing means.

Claim 3

An arrangement as claimed in claim 1, wherein said first connection means include a connection between coupled drains of the first and second transistors, a high-frequency output signal being available at the coupled common drains.

Claim 4

An arrangement as claimed in claim 2, wherein said second connection means include means for connecting a source of the first transistor, which first transistor receives a high-frequency input signal, to a gate of the second transistor.

Claim 5

An arrangement as claimed in claim 3, wherein the means to ensure the feedback of direct current to ground comprises a high-frequency line coupled between the source of said first transistor and ground.

Claim 6

An arrangement as claimed in claim 4, wherein the high-frequency line has a value equal to a quarter wavelength of the frequency wave of the input signal.

Claim 7

An arrangement as claimed in claim 4, wherein the biasing means comprise a high resistance coupled between gate electrode of said second transistor and a D.C. supply terminal and a direct connection means coupled between the source of the second transistor and ground.

Claim 8

An arrangement as claimed in claim 4, wherein the biasing means include a resistor connected between the gate electrode of said second transistor and ground, and also a resistor and a decoupling capacitor connected in parallel between a source of said second transistor and ground.

Claim 9

An arrangement as claimed in claim 3, wherein the means to ensure the feedback of direct current to ground comprises a high resistance resistor connected between the source of said first transistor and ground.

Claim 10

An arrangement as claimed in claim 8, wherein the resistor comprises a third transistor having a short-circuited gate and source which are connected to ground, a drain of said third being connected to the source of said first transistor.

Claim 11

An arrangement as claimed in claim 9, wherein the biasing means comprise a high resistance coupled between the gate electrode of said second transistor and a D.C. supply terminal and a direct connection means coupled between the source of the second transistor and ground.

Claim 12

An arrangement as claimed in claim 9, wherein the biasing means include a resistor connected between the gate electrode of said second transistor and ground, and also a resistor and a decoupling capacitor connected in parallel between a source of said second transistor and ground.

Claim 13

An arrangement as claimed in claim 11 wherein said means for connecting the source of said first transistor to the gate of said second transistor comprise a DC decoupling capacitor.

Claim 14

An arrangement as claimed in claim 8, wherein the biasing means comprise a high resistance coupled between the gate electrode of said second transistor and a D.C. supply terminal and a direct connection means coupled between the source of the second transistor and ground.

Claim 15

An arrangement as claimed in claim 8, wherein the biasing means include a resistor connected between the gate electrode of said second transistor and ground, and also a resistor and a decoupling capacitor connected in parallel between a source of said second transistor and ground.

Claim 16

An arrangement as claimed in claim 3 which further includes a negative feedback loop coupled between a high frequency output and a high frequency input of said arrangement.

Claim 17

An arrangement as claimed in claim 3 wherein said means for connecting the source of said first transistor to the gate of said second transistor comprise a DC decoupling capacitor.

Claim 18

An arrangement as claimed in claim 3, wherein an input of the amplifier stage is connected to a first bias circuit comprising means for biasing a gate of the first transistor, and means connecting an output of the amplifier stage to a second bias circuit comprising means for biasing the drains of the first and second transistors simultaneously.

Claim 19

An arrangement as claimed in claim 2, wherein an input of the amplifier stage is connected to a first bias circuit comprising means for biasing a gate of the first transistor, and means connecting an output of the amplifier stage to a second bias circuit comprising means for biasing the drains of the first and second transistors simultaneously.

Claim 20

An arrangement as claimed in claim 2 which further includes a positive feedback loop coupled between a high frequency output and a high frequency input of said arrangement.

Claim 21

An arrangement as claimed in claim 19, wherein the positive feedback loop comprises a series connection of an inductance, a resistor and a capacitance.

Claim 22

An arrangement as claimed in claim 20, wherein the inductance comprises a high-frequency line.

Claim 23

An arrangement as claimed in claim 1 which further includes a negative feedback loop coupled between a high frequency output and a high frequency input of said arrangement.

Claim 24

A high-frequency IC amplifier stage comprising: first and second field effect transistors coupled together by a first connection means so as to control the amplifier stage output power by influencing the unit gate width of the amplifier stage, an input terminal for supplying a high-frequency input signal to a control electrode of the first field effect transistor, an output terminal coupled to a first main electrode of the second field effect transistor, second connection means coupling one main electrode of the first field effect transistor to a control electrode of the second field effect transistor thereby to determine the input capacitance of the amplifier stage, means providing a feedback of direct current to ground, and means for DC biasing at least one of said first and second field effect transistors.

Claim 25

A high-frequency IC amplifier stage comprising: first and second field effect transistors coupled together by a first connection means so as to control the amplifier stage output power by influencing the unit gate width of the amplifier stage, an input terminal for supplying a high-frequency input signal to a control electrode of the first field effect transistor, an output terminal coupled to a first main electrode of the second field effect transistor, second connection means coupling one main electrode of the first field effect transistor to a control electrode of the second field effect transistor thereby to determine the input capacitance of the amplifier stage, means providing a feedback of direct current to ground, and means for DC biasing at least one of said first and second field effect transistors.

Claim 26

An amplifier stage as claimed in claim 23, wherein said first connection means comprise a direct connection between the first main electrode of the second field effect transistor and a corresponding first main electrode of the first field effect transistor.

Claim 27

An amplifier stage as claimed in claim 24, wherein said feedback providing means comprise a diode-connected field effect transistor connected between said one main electrode of the first field effect transistor and ground.

Claim 28

An amplifier stage as claimed in claim 24, wherein said DC biasing means are coupled to the control electrode of the second field effect transistor, the feedback providing means are coupled to said one main electrode of the first field effect transistor, and said second connection means comprise a capacitor.

Claim 29

An amplifier stage as claimed in claim 24, further comprising a feedback circuit coupled between said output terminal and said input terminal of the amplifier stage.

Claim 30

An amplifier stage as claimed in claim 27, wherein said feedback circuit comprises a series circuit including an inductance, a resistance and a capacitance.