US5013401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave plasma etching method and apparatus
Assignee: Canon Anelva Corp
•
Filing: 1990-03-21
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Granted: 1991-05-07
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Expires: 2010-03-21
Abstract
Abstract A microwave plasma etching method and apparatus for manufacturing electronic devices such as transistors. The method includes the steps of forming a stream of plasma from a processing gas within a plasma formation chamber by using an electric field produced by a microwave and an electron cyclotron resonance phenomenon produced by a magnetic field perpendicular to the electric field, and processing a substrate surface by locating it at the electron cyclotron resonance point and exposing it to a radiation of the plasma stream. The apparatus has a plasma formation chamber, a microwave introducing device connected to the plasma formation chamber, a magnetic field applying device for producing a magnetic field perpendicular to an electric field produced within the plasma formation chamber, and a gas introducing system for introducing a processing gas into the plasma formation chamber. A substrate holder is provided within the plasma formation chamber for holding a substrate at a resonance point of the electron cyclotron resonance phenomenon exhibited by the introduced microwave and applied magnetic field where the magnetic field has a particular strength.
Inventors
- 👤 Seiji Samukawa
- 👤 Masami Sasaki
- 👤 Sumio Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 00:16
CPC Classifications
C; C23; C23F; C23F4/00; C23F4/04; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32431; H01J37/3266; H01J37/32678
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
85 words
A microwave plasma etching method which includes the steps of: forming a stream of plasma from a processing gas within a plasma formation chamber, by using an electric field produced by a microwave and an electron cyclotron resonance phenomenon produced by a magnetic field perpendicular to the electric field; and processing a substrate surface by exposing it to a radiation of the plasma stream, wherein the method further includes the step of processing the substrate susrface by locating it at the electron cyclotron resonance point.
Claim 2
Dependent Claim
85 words
A microwave plasma etching method which includes the steps of: forming a stream of plasma from a processing gas within a plasma formation chamber, by using an electric field produced by a microwave and an electron cyclotron resonance phenomenon produced by a magnetic field perpendicular to the electric field; and processing a substrate surface by exposing it to a radiation of the plasma stream, wherein the method further includes the step of processing the substrate susrface by locating it at the electron cyclotron resonance point.
Claim 3
Dependent Claim
102 words
A microwave plasma etching method which includes the steps of: forming a stream of plasma from a processing gas within a plasma formation chamber, by using an electric field produced by a microwave and an electron cyclotron resonance phenomenon produced by a magnetic field perpendicular to the electric field; and processing a substrate surface by exposing it to a radiation of the plasma stream, wherein the method further includes the step of processing the substrate surface by locating it at the point away from the electron cyclotron resonance point where the magnetic field has the strength equal to plus or minus 3%.
Claim 4
Dependent Claim
102 words
A microwave plasma etching method which includes the steps of: forming a stream of plasma from a processing gas within a plasma formation chamber, by using an electric field produced by a microwave and an electron cyclotron resonance phenomenon produced by a magnetic field perpendicular to the electric field; and processing a substrate surface by exposing it to a radiation of the plasma stream, wherein the method further includes the step of processing the substrate surface by locating it at the point away from the electron cyclotron resonance point where the magnetic field has the strength equal to plus or minus 3%.
Claim 5
Dependent Claim
32 words
A microwave plasma etching method as defined in claim 1 or 2, wherein the step of processing the substrate surface comprises processing it by applying an RF bias voltage across the substrate.
Claim 6
Dependent Claim
29 words
A microwave plasma etching method as defined in claim 1 or 2, wherein the plasma formation chamber has the shape that meets the requirements for a microwave cavity resonator.
Claim 7
Dependent Claim
23 words
A microwave plasma etching method as defined in claim 1 or 2, wherein the plasma formation chamber is a quartz glass bell jar.
Claim 8
Dependent Claim
93 words
A microwave plasma etching apparatus which comprises: a plasma formation chamber; microwave introducing means connected to the plasma formation chamber; magnetic field applying means for producing a magnetic field perpendicular to an electric field produced within the plasma formation chamber; gas introducing means for introducing a processing gas into the plasma formation chamber; and a substrate holder within the plasma formation chamber for holding a substrate at a resonance point of the electron cyclotron resonance phenomenon exhibited by the introduced microwave and applied magnetic field where the magnetic field has a particular strength.
Claim 9
Dependent Claim
93 words
A microwave plasma etching apparatus which comprises: a plasma formation chamber; microwave introducing means connected to the plasma formation chamber; magnetic field applying means for producing a magnetic field perpendicular to an electric field produced within the plasma formation chamber; gas introducing means for introducing a processing gas into the plasma formation chamber; and a substrate holder within the plasma formation chamber for holding a substrate at a resonance point of the electron cyclotron resonance phenomenon exhibited by the introduced microwave and applied magnetic field where the magnetic field has a particular strength.
Claim 10
Dependent Claim
103 words
A microwave plasma etching apparatus which comprises: a plasma formation chamber; microwave introducing means connected to the plasma formation chamber; magnetic field applying means for producing a magnetic field perpendicular to an electric field produced within the plasma formation chamber; gas introducing means for introducing a processing gas into the plasma formation chamber; and a substrate holder within the plasma formation chamber for holding a substrate at a point away from the resonance point of the electron cyclotron resonance phenomenon exhibited by the introduced microwave and applied magnetic field where the magnetic field has the particular strength equal to plus or minus 3%.
Claim 11
Dependent Claim
103 words
A microwave plasma etching apparatus which comprises: a plasma formation chamber; microwave introducing means connected to the plasma formation chamber; magnetic field applying means for producing a magnetic field perpendicular to an electric field produced within the plasma formation chamber; gas introducing means for introducing a processing gas into the plasma formation chamber; and a substrate holder within the plasma formation chamber for holding a substrate at a point away from the resonance point of the electron cyclotron resonance phenomenon exhibited by the introduced microwave and applied magnetic field where the magnetic field has the particular strength equal to plus or minus 3%.
Claim 12
Dependent Claim
23 words
A microwave plasma etching apparatus as defined in claim 6 or 7, further including RF power supply means connected to the substrate holder.
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