MOS thin film transistor

Claim 2

In a metal-oxide semiconductor transistor having a drain region, and a source region formed in a crystalline semiconductor body layer provided over a planar surface of a semiconductor substrate wafer, and a gate electrode with a gate oxide beneath said gate electrode, the improvement comprising: (a) a buried insulator layer formed on the semiconductor body between said crystalline semiconductor body layer and said substrate and covering said planar surface; (b) said drain region comprising an upper drain region and a lower lightly doped region extending to said insulator layer and the dopant level of the lower region being less than that of the upper region and which is sufficient to cause conversion of the semiconductor body layer in the lower region; and (c) said source region not extending to said insulator.

Claim 3

The semiconductor transistor of claim 1 wherein the drain and source regions are doped as N type, the semiconductor body layer is doped as P type, and the lightly doped device region is N-doped, and a field oxide is formed in the semiconductor body layer and extends to said insulator layer to laterally isolate the transistor from other devices formed in the semiconductor body layer.

Claim 4

In a metal-oxide semiconductor transistor having a drain region, and a source region formed in a crystalline semiconductor body layer provided over a semiconductor substrate wafer, and a gate electrode with a gate oxide beneath said gate electrode, the improvement comprising: (a) an insulator layer between said crystalline semiconductor body layer and said substrate; (b) said drain region including a lightly doped region extending to said insulator layer; and (c) said source region not extending to said insulator; and wherein the drain and source regions are doped as N type, the semiconductor body layer is doped as P type, and the lightly doped drain region is N-doped, and a field oxide is formed in the semiconductor body layer and extends to said insulator layer to laterally isolate the transistor from other devices formed in the semiconductor body layer; and wherein the field oxide is P+ doped and forms P+ sidewalls at the interface between the field oxide and the semiconductor body layer to form a low leakage PN junction at said interface.

Claim 5

In a metal-oxide semiconductor transistor having a drain region, and a source region formed in a crystalline semiconductor body layer provided over a semiconductor substrate wafer, and a gate electrode with a gate oxide beneath said gate electrode, the improvement comprising: (a) an insulator layer between said crystalline semiconductor body layer and said substrate; (b) said drain region including a lightly doped region extending to said insulator layer; and (c) said source region not extending to said insulator; and wherein the drain and source regions are doped as N type, the semiconductor body layer is doped as P type, and the lightly doped drain region is N-doped, and a field oxide is formed in the semiconductor body layer and extends to said insulator layer to laterally isolate the transistor from other devices formed in the semiconductor body layer; and wherein the field oxide is P+ doped and forms P+ sidewalls at the interface between the field oxide and the semiconductor body layer to form a low leakage PN junction at said interface.

Claim 6

The semiconductor transistor of claim 3 wherein the semiconductor body layer extends contiguous from a channel region beneath the gate electrode and continues beneath the source region and further including a body contact electrode located laterally adjacent said source region for electrically contacting said body layer as it extends beneath the source region.

Claim 7

The semiconductor transistor of claim 4 wherein said contact electrode is formed of a metal silicide.

Claim 8

The semiconductor transistor of claim 3 wherein the drain region is coupled by a metal-silicide strap to a polysilicon strip.

Claim 9

The semiconductor transistor of claim 3 wherein the doping concentration of the lightly doped region is in the range of 1×10 17 to 10 19 atoms/cm 3 .

Claim 10

The semiconductor transistor of claim 3 wherein the body layer and wafer is formed of silicon, the gate electrode of polysilicon and the insulator layer of silicon oxide.

Claim 11

A semiconductor transistor formed on a semiconductor wafer comprising: (a) an insulator layer on said wafer; (b) an epitaxial body layer on said insulator layer; (c) doped surface source and drain regions of same type conductivity formed in said body layer laterally adjacent and displaced from one another; (d) a thin insulator region formed over said body layer in the space between the source and drain regions; (e) a gate electrode formed on said thin insulator region; (f) a thick field oxide region formed in said body layer laterally encircling said transistor and extending vertically to said insulator layer; (g) a lightly doped subsurface drain region extending from said surface drain region to said insulator layer, the dopant level of this lightly doped region being lower than that of the surface drain region and being sufficient to cause conversion of said body layer in the vicinity of said drain region; and said source region being shallow in depth, so as to not extend to said insulator region.

Claim 12

A semiconductor transistor formed on a semiconductor wafer comprising: (a) an insulator layer on said wafer; (b) an epitaxial body layer on said insulator layer; (c) doped surface source and drain regions of same type conductivity formed in said body layer laterally adjacent and displaced from one another; (d) a thin insulator region formed over said body layer in the space between the source and drain regions; (e) a gate electrode formed on said thin insulator region; (f) a thick field oxide region formed in said body layer laterally encircling said transistor and extending vertically to said insulator layer; (g) a lightly doped subsurface drain region extending from said surface drain region to said insulator layer, the dopant level of this lightly doped region being lower than that of the surface drain region and being sufficient to cause conversion of said body layer in the vicinity of said drain region; and said source region being shallow in depth, so as to not extend to said insulator region.

Claim 13

In a metal-oxide semiconductor transistor having a doped drain region and a source region of same type conductivity formed in a crystalline semiconductor body layer of opposite conductivity provided over a semiconductor substrate wafer and a gate electrode with a gate oxide beneath the gate electrode, the improvement comprising: (a) a doped buried insulator layer formed between said body layer and said wafer; (b) a lightly doped deep extended region of same conductivity as said drain region selectively formed beneath said drain region and extending to said insulator layer and having a dopant level less than the level of said drain and sufficient to cause dopant conversion of the body layer; (c) a thick field oxide region laterally encircling said transistor and extending to said insulator layer; (d) said source region being a shallow region which terminates in said body layer and does not extend to said insulator layer.

Claim 14

In a metal-oxide semiconductor transistor having a doped drain region and a source region of same type conductivity formed in a crystalline semiconductor body layer of opposite conductivity provided over a semiconductor substrate wafer and a gate electrode with a gate oxide beneath the gate electrode, the improvement comprising: (a) a doped buried insulator layer formed between said body layer and said wafer; (b) a lightly doped deep extended region of same conductivity as said drain region selectively formed beneath said drain region and extending to said insulator layer and having a dopant level less than the level of said drain and sufficient to cause dopant conversion of the body layer; (c) a thick field oxide region laterally encircling said transistor and extending to said insulator layer; (d) said source region being a shallow region which terminates in said body layer and does not extend to said insulator layer.

Claim 15

The transistor of claim 10 wherein the insulator layer is formed of material from the group consisting of silicon oxide or silicon nitride, the gate electrode is formed of polysilicon, the drain and source regions of N type silicon, and the body layer of P type silicon.

Claim 16

A semiconductor transistor formed on a semiconductor wafer comprising: (a) an insulator layer on said wafer; (b) an epitaxial body layer on said insulator layer; (c) surface source and drain regions of same type conductivity formed in said body layer laterally adjacent and displaced from one another; (d) a thin insulator region formed over said body layer in the space between the source and drain regions; (e) a gate electrode formed on said thin insulator region; (f) a thick field oxide region formed in said body layer laterally encircling said transistor and extending vertically to said insulator layer; (g) a lightly doped subsurface drain region extending from said surface drain region to said insulator layer; and said source region being shallow in depth, so as to not extend to said insulator region; and wherein the conductivity of the source and drain regions is N type and the conductivity of the body layer is P type and thin P type sidewalls are formed at the interface between the field oxide region and the semiconductor body layer and a thin P type oxide layer is formed beneath said body layer and over said insulator layer opposite the source region.

Claim 17

A semiconductor transistor formed on a semiconductor wafer comprising: (a) an insulator layer on said wafer; (b) an epitaxial body layer on said insulator layer; (c) surface source and drain regions of same type conductivity formed in said body layer laterally adjacent and displaced from one another; (d) a thin insulator region formed over said body layer in the space between the source and drain regions; (e) a gate electrode formed on said thin insulator region; (f) a thick field oxide region formed in said body layer laterally encircling said transistor and extending vertically to said insulator layer; (g) a lightly doped subsurface drain region extending from said surface drain region to said insulator layer; and said source region being shallow in depth, so as to not extend to said insulator region; and wherein the conductivity of the source and drain regions is N type and the conductivity of the body layer is P type and thin P type sidewalls are formed at the interface between the field oxide region and the semiconductor body layer and a thin P type oxide layer is formed beneath said body layer and over said insulator layer opposite the source region.