US5004903A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contact type image sensor device with specific capacitance ratio
Assignee: Nippon Steel Corp
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Filing: 1990-04-02
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Granted: 1991-04-02
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Expires: 2010-04-02
Abstract
Abstract A contact type image sensor device comprises a plurality of photodiodes connected in a matrix, and an equal number of blocking diodes. A capacity ratio of a photo electric part constituting the photodiodes to a diode part constituting the blocking diode is in the range of 2:1 to 30:1. Dynamic range, magnitude of the signal current, light sensitivity and after image characteristics of the image sensor are improved according to the invention.
Inventors
- 👤 Koichi Kitamura
- 👤 Hidenori Mimura
- 👤 Kazuo Yamamoto
- 👤 Yasumitsu Ohta
- 👤 Kazuyoshi Sai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:25
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
69 words
A contact type image sensor device comprising a plurality of photodiodes connected in a matrix for converting a light signal to an electrical signal depending on light intensity and comprising an equal numbers of blocking diodes to prevent a cross talk phenomenon, wherein a capacity ratio of a photoelectric part constituting said photodiodes to a diode part constituting said blocking diodes is in a range of 2:1 to 30:1.
Claim 2
Dependent Claim
69 words
A contact type image sensor device comprising a plurality of photodiodes connected in a matrix for converting a light signal to an electrical signal depending on light intensity and comprising an equal numbers of blocking diodes to prevent a cross talk phenomenon, wherein a capacity ratio of a photoelectric part constituting said photodiodes to a diode part constituting said blocking diodes is in a range of 2:1 to 30:1.
Claim 3
Dependent Claim
55 words
A contact type of image sensor device as claimed in claim 1, wherein said photoelectric part and said diode part comprise a p layer having a membrane thickness of 100Å to 500Å, an i layer having a membrane thickness of 3,000Å to 10,000Å, and an n layer having a membrane thickness of 100Å to 500Å.
Claim 4
Dependent Claim
28 words
A contact type of image sensor device as claimed in claim 2, wherein both said photoelectric part and said diode part are separately formed on a common substrate.
Claim 5
Dependent Claim
26 words
A contact type of image sensor as claimed in claim 2, wherein said photoelectric part and said diode part are separately formed in a laminated structure.
Claim 6
Dependent Claim
54 words
An image sensing device, comprising; a first diode for converting a light signal to an electrical signal depending on a light intensity, and a second diode for deriving the electrical signal from said first diode, wherein said second diode has a capacity ratio to said first diode in a range of 1/2 to 1/30.
Claim 7
Dependent Claim
54 words
An image sensing device, comprising; a first diode for converting a light signal to an electrical signal depending on a light intensity, and a second diode for deriving the electrical signal from said first diode, wherein said second diode has a capacity ratio to said first diode in a range of 1/2 to 1/30.
Claim 8
Dependent Claim
28 words
An image sensing device as claimed in claim 5, wherein said second diode has an area ratio to said first diode in a range of 1/2 to 1/30.
Claim 9
Dependent Claim
18 words
An image sensing device as claimed in claim 5, wherein said first diode includes an amorphous silicon device.
Claim 10
Dependent Claim
18 words
An image sensing device as claimed in claim 5, wherein said second diode includes an amorphous silicon device.
Claim 11
Dependent Claim
48 words
An image sensing device as claimed in claim 7, wherein said first diode comprises a p layer having a membrane thickness of 100Å to 500Å, an i layer having a membrane thickness of 3,000Å to 10,000Å, and an n layer having a membrane thickness of 100Å to 500Å.
Claim 12
Dependent Claim
48 words
An image sensing device as claimed in claim 8, wherein said second diode comprises a p layer having a membrane thickness of 100Å to 500Å, an i layer having a membrane thickness of 3,000Å to 10,000Å, and an n layer having a membrane thickness of 100Å to 500Å.
Claim 13
Dependent Claim
30 words
An image sensing device as claimed in claim 5, further comprising; common substrate for forming both said first diode and said second diode separately on a surface of said substrate.
References Cited (Backward Citations)
US4956687A
Cited
US4943839A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-01 | 1994-10-01 | 1995-04-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-01 | 1998-10-01 | 1999-04-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-01 | 2002-10-01 | 2003-04-02 | $7700.00 | Window Closed / Lapsed |