Ion implantation apparatus and method of controlling the same

Claim 2

An ion implantation apparatus, comprising: an implantation chamber into which an ion beam is entered, said ion beam being scanned in an X direction; a holder for holding a wafer in said implantation chamber; and a holder drive unit for mechanically scanning said holder in a Y direction substantially perpendicular to said X direction in said implantation chamber; wherein said holder drive unit swingingly rotates said holder so that said wafer is mechanically scanned in said Y direction.

Claim 3

An ion implantation apparatus as claimed in claim 1, wherein said holder drive unit comprises direct motors disposed in said implantation chamber.

Claim 4

An ion implantation apparatus as claimed in claim 1, wherein said holder drive unit comprises a bearing having a vacuum seal function disposed on a side wall section of said implantation chamber; a spindle passed through said bearing in said X direction; a first reversely rotatable direct drive motor, whose output shaft is connected to an end section of said spindle outside said implantation chamber; a second reversely rotatable direct drive motor, whose output shaft is connected to an end section of said spindle inside said implantation chamber, said output shaft of said second direct motor being nearly perpendicular to said spindle; an arm connected nearly perpendicularly to said output shaft of said second direct drive motor; and a third reversely rotatable direct drive motor, whose output shaft is connected nearly perpendicularly to said arm; and wherein said holder is connected nearly perpendicularly to said output shaft of said third direct drive motor.

Claim 5

An ion implantation apparatus as claimed in claim 1, wherein said holder drive units comprises a hollow arm shaft pivotally supported in said implantation chamber in such a manner that said arm shaft is placed nearly in parallel to moving direction of said ion beam; a drive means for rotatably driving said arm shaft both in forward and backward directions; an intermediate shaft rotatably passed through said arm shaft, said intermediate shaft not following the rotation of said arm shaft; an arm connected nearly perpendicularly to said arm shaft; a holder shaft pivotally supported at an end section of said arm so that said holder shaft is placed nearly in parallel to the moving direction of said ion beam, said holder being connected nearly perpendicularly to an end section of said holder shaft; and connection means for connecting said holder shaft and said intermediate shaft at a given rotation ratio.

Claim 6

An ion implantation apparatus as claimed in claim 1, wherein said ion beam is scanned by only one electrical scanning system.

Claim 7

An ion implantation apparatus as claimed in claim 1, further comprising a second holder for holding a second wafer and a second holder drive unit in said implantation chamber, said two holders and said two holder drive units being equivalent to each other so that while ions are implantated into one of said wafers, the other of said wafers is taken out from or mounted on said holder.

Claim 8

An ion implantation apparatus as claimed in claim 1, wherein said ion beam is arranged in parallel by a magnetic field.

Claim 9

An ion implantation apparatus as claimed in claim 1, wherein said ion beam is arranged in parallel by an electric field.

Claim 10

A ion implantation apparatus as claimed in claim 1, further comprising means for driving said holder at a predetermined implantation angle position.

Claim 11

An ion implantation apparatus as claimed in claim 1, further comprising means for rotating said holder stepwise by a predetermined angle with respect to said ion beam.

Claim 12

In a method for controlling an ion implantation apparatus, comprising the steps of: electrically scanning an ion beam in an X direction; rotating an arm swingingly; and scanning a wafer held at an end of said arm mechanically in an irradiation area of said ion beam in a Y direction substantially perpendicular to the X direction, said wafer being kept in a particularly posture, the improvement comprising the step of: controlling an angular speed ω so that the following equation or the relation substantially equivalent thereto is satisfied: ω={α/(L.sub.arm · cos θ)}I wherein I: a beam current of said ion beam, L arm : a length between a center of swing rotation of said arm and a center of said wafer, θ: an angle of said arm at swing rotation from the X direction, ω: an angular speed of said arm at the swing rotation, and α: a proportional constant.

Claim 13

In a method for controlling an ion implantation apparatus, comprising the steps of: electrically scanning an ion beam in an X direction; rotating an arm swingingly; and scanning a wafer held at an end of said arm mechanically in an irradiation area of said ion beam in a Y direction substantially perpendicular to the X direction, said wafer being kept in a particularly posture, the improvement comprising the step of: controlling an angular speed ω so that the following equation or the relation substantially equivalent thereto is satisfied: ω={α/(L.sub.arm · cos θ)}I wherein I: a beam current of said ion beam, L arm : a length between a center of swing rotation of said arm and a center of said wafer, θ: an angle of said arm at swing rotation from the X direction, ω: an angular speed of said arm at the swing rotation, and α: a proportional constant.