US4996185A
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Ceramic superconducting thin film
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1988-05-31
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Granted: 1991-02-26
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Expires: 2008-05-31
Abstract
Abstract In a superconducting thin film composed of compound oxide containing at least one of element selected from a group comprising Y, La, Gd, Ho, Er, Tm, Yb, Dy, Sm, Eu and Lu, Ba and Cu, improvement in that said thin film consists of a single crystal or polycrystal whose c-axis is orientated to a predetermined direction or mono-directionally.
Inventors
- 👤 Naoji Fujimori
- 👤 Keizo Harada
- 👤 Shuji Yazu
- 👤 Tetsuji Jodai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:11
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0408; H10N60/0576; H10N60/0604; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/729
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
226 words
A superconducting thin film comprising a compound oxide represented by the general formula Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-δ in which Ln is an element selected from a group consisting of Y, La, Gd, Ho, Er, Tm, Yb, Nd, Sm, Eu and Lu, and δ is a number between zero and one, wherein said thin film is deposited on a single crystal substrate and the X-ray diffraction chart of said thin film possesses at least one crystal face of (00n) plane having an intensity J 00n in an X-ray diffraction pattern which satisfies the following relation: J.sub.00n /J.sub.MAX ≧2(I.sub.00n /I.sub.MAX) in which (00n) is an index of a crystal face of said thin film, wherein "n" is an integer; I MAX is an intensity of the most intense peak in a powder X-ray diffraction chart measured in a powder sample of a compound oxide represented by a formula Y 1 Ba 2 Cu 3 O 7 used as a reference; I 00n is an intensity of the (00n) plane in said powder X-ray diffraction chart; J MAX is an intensity of a crystal face having the most intense peak in said powder X-ray diffraction chart and is observed in an X-ray diffraction chart measured in said thin film; and J 00n is an intensity of the (00n) plane in said X-ray diffraction chart measured in said thin film.
Claim 2
Dependent Claim
226 words
A superconducting thin film comprising a compound oxide represented by the general formula Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-δ in which Ln is an element selected from a group consisting of Y, La, Gd, Ho, Er, Tm, Yb, Nd, Sm, Eu and Lu, and δ is a number between zero and one, wherein said thin film is deposited on a single crystal substrate and the X-ray diffraction chart of said thin film possesses at least one crystal face of (00n) plane having an intensity J 00n in an X-ray diffraction pattern which satisfies the following relation: J.sub.00n /J.sub.MAX ≧2(I.sub.00n /I.sub.MAX) in which (00n) is an index of a crystal face of said thin film, wherein "n" is an integer; I MAX is an intensity of the most intense peak in a powder X-ray diffraction chart measured in a powder sample of a compound oxide represented by a formula Y 1 Ba 2 Cu 3 O 7 used as a reference; I 00n is an intensity of the (00n) plane in said powder X-ray diffraction chart; J MAX is an intensity of a crystal face having the most intense peak in said powder X-ray diffraction chart and is observed in an X-ray diffraction chart measured in said thin film; and J 00n is an intensity of the (00n) plane in said X-ray diffraction chart measured in said thin film.
Claim 3
Dependent Claim
31 words
A thin film as set forth in claim 1, wherein said thin film is a thin film prepared by physical vapor deposition technique on a substrate consisting of a single crystal.
Claim 4
Dependent Claim
27 words
A thin film as set forth in claim 1, wherein said (00n) planes of said thin film are (002) plane, (003) plane, (005) plane and (006) plane.
Claim 5
Dependent Claim
34 words
A thin film as set forth in claim 1, wherein said thin film is composed of a compound oxide containing Ba, Y and Cu and exhibits a X-ray diffraction pattern shown in FIG. 1.
Claim 6
Dependent Claim
17 words
A thin film as set forth in claim 1, wherein the thin film is a single crystal.
Claim 7
Dependent Claim
17 words
A thin film as set forth in claim 1, wherein the thin film is a single crystal.
Claim 8
Dependent Claim
66 words
A thin film as set forth in claim 2, wherein said substrate of single crystal has such lattice constant or lattice constants in a-axis and/or b-axis that are proximate to those of a crystal represented by a formula: Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7 in which, Ln stands for an element selected from a group comprising Y, La, Gd, Ho, Er, Tm, Yb, Nd, Sm, Eu and Lu.
Claim 9
Dependent Claim
32 words
A thin film as set forth in claim 2, wherein a surface of said substrate of single crystal on which said thin film is deposited is a crystal face of (100) plane.
Claim 10
Dependent Claim
31 words
A thin film as set forth in claim 2, wherein a surface of said single crystal substrate on which said thin film is deposited is a crystal face of (110) plane.
Claim 11
Dependent Claim
41 words
A thin film as set forth in claim 2, wherein said substrate of single crystal is a single crystal selected from a group comprising MgO, SrTiO 3 , Al 2 O 3 , sapphire, SiO 2 , quartz, YSZ and ZnO.
Claim 12
Dependent Claim
45 words
A thin film as set forth in claim 8, wherein each intensity of (002) plane, (003) plane, (005) plane and (006) plane observed in a X-ray diffraction chart measured in said thin film is more than double of intensities of (111) plane and (112) plane.
Claim 13
Dependent Claim
45 words
A thin film as set forth in claim 5, wherein the c-axis is oriented perpendicular to the plane defined by a-axis and b-axis of the crystal so that it has a high critical current density in a direction parallel to the surface of the substrate.
Claim 14
Dependent Claim
45 words
A thin film as set forth in claim 6, wherein the c-axis is oriented parallel to the plane defined by a-axis and b-axis of the crystal so that it has a high critical current density in a direction perpendicular to the surface of the substrate.
References Cited (Backward Citations)
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