Process for coating a photoresist composition onto a substrate

Claim 2

A process for applying a film of uniform thickness of photoresist solids onto a substrate comprising the steps of: (a) forming a liquid photoresist composition comprising photoresist solids in a solvent; the solids content of said photoresist composition being in the range from about 10% by weight to about 22% by weight; (b) forming atomized spray droplets of said liquid photoresist composition; (c) allowing said atomized spray droplets to settle by gravity onto a substrate surface, thereby forming a photoresist coating on that surface; and (d) spinning said coated substrate at a pre-determined spin speed and for a pre-determined time to remove substantially all of said solvent from said photoresist coating and to form a film of uniform thickness of photoresist solids on the substrate.

Claim 3

The process of claim 1 wherein said atomized photoresist spray droplets are formed in step (b) by means of an ultrasonic spray nozzle.

Claim 4

The process of claim 2 wherein said liquid photoresist composition is fed by gravity into the ultrasonic spray nozzle.

Claim 5

The process of claim 3 wherein the liquid photoresist composition is fed into said ultrasonic spray nozzle by at a rate of about 10 to about 20 milliliters per minute for about 2 to about 6 seconds per substrate being coated.

Claim 6

The process of claim 1 wherein the solids content of said photoresist composition is from about 12% to about 20% by weight.

Claim 7

The process of claim 1 wherein the solids content of the photoresist is from about 15% to about 19% by weight.

Claim 8

The process of claim 1 wherein said substrate is a silicon wafer.

Claim 9

The process of claim 1 wherein said coating step (c) is carried out while said substrate is spinning.

Claim 10

The process of claim 8 wherein said coating step (c) is carried out at a spin speed from about 500 to about 2000 rpms.

Claim 11

The process of claim 1 wherein said spinning step (d) is carried out at a spin speed from about 1000 to about 6000 rpms for about 20-60 seconds.

Claim 12

The process of claim 1 wherein said film of uniform thickness of photoresist solids is from about 0.5 to 1.5 microns in thickness.

Claim 13

A process for applying an uniform thick film photoresist solids onto a substrate comprising the steps of: (a) forming a liquid photoresist composition comprising photoresist solids in a solvent; the solids content of said photoresist composition being in the range from about 12% by weight to about 20% by weight; (b) feeding said liquid photoresist composition by gravity to an ultrasonic spray nozzle at a rate of about 10 to 20 millileters per minute; (c) passing said liquid photoresist composition through said ultrasonic spray nozzle, thereby forming atomized spray droplets of said liquid photoresist composition; (d) allowing said atomized spray droplets to settle on a substrate, said settling time being from about 2 to 6 seconds per substrate thereby forming a photoresist coating on said substrate; and (e) spinning said coated substrate at a pre-determined spin speed in the range from about 1000 to about 6000 rpms and for a predetermined spin time for about 20 to 60 seconds, thereby forming a film of uniform thickness of photoresist solids on said substrate.

Claim 14

A process for applying an uniform thick film photoresist solids onto a substrate comprising the steps of: (a) forming a liquid photoresist composition comprising photoresist solids in a solvent; the solids content of said photoresist composition being in the range from about 12% by weight to about 20% by weight; (b) feeding said liquid photoresist composition by gravity to an ultrasonic spray nozzle at a rate of about 10 to 20 millileters per minute; (c) passing said liquid photoresist composition through said ultrasonic spray nozzle, thereby forming atomized spray droplets of said liquid photoresist composition; (d) allowing said atomized spray droplets to settle on a substrate, said settling time being from about 2 to 6 seconds per substrate thereby forming a photoresist coating on said substrate; and (e) spinning said coated substrate at a pre-determined spin speed in the range from about 1000 to about 6000 rpms and for a predetermined spin time for about 20 to 60 seconds, thereby forming a film of uniform thickness of photoresist solids on said substrate.

Claim 15

The process of claim 12 wherein said solids content of said photoresist composition is from about 15% to about 19% by weight.

Claim 16

The process of claim 13 wherein said substrate is a silicon wafer.

Claim 17

The process of claim 14 wherein said coating step (d) is carried out while said substrate is spinning.

Claim 18

The process of claim 15 wherein said spinning for coating step (d) is carried out at a spin speed of about 500 to 2000 rpms.

Claim 19

The process of claim 16 wherein said spinning step (e) is carried out at a rpm speed of about 1500 to about 5000 rpms.

Claim 20

The process of claim 17 wherein said uniform thick film of photoresist solids is from about 0.5 to 1.5 microns in thickness.