US4994674A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion implantation apparatus capable of avoiding electrification of a substrate
Assignee: Sumitomo Heavy Industries Ion Technology Co Ltd
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Filing: 1990-05-08
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Granted: 1991-02-19
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Expires: 2010-05-08
Abstract
Abstract In an ion implantation apparatus which is for use in injecting an ion beam (11) onto a wafer (12) in a predetermined direction and which comprises an electric conductor tube (14) divided into a first tube section (17) and a second tube section (18) along the predetermined direction with an insulator interposed therebetween. The first tube section is located in proximity of the wafer and is grounded while the second tube section is remote from the wafer to be used as a target section which is bombarded by primary electrons to generate secondary electrons directed to the wafer. Undesired electrons are trapped by the first tube section and flow through the ground. The electric conductor tube may further comprise a third tube section (21) which is electrically insulated from the second tube section and which is remote from the wafer in comparison with the second tube section in the predetermined direction. The first and the third tube sections are controlled so as to adjust their diameters in dependency upon a diameter of the ion beam.
Inventors
- 👤 Tadamoto Tamai
- 👤 Junichi Murakami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:50
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; H01J37/02; H01J37/026
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
165 words
In an ion implantation apparatus for injecting an ion beam into a substrate by guiding said ion beam in a predetermined direction, said substrate being located on a disk section transversely of said predetermined direction, said ion implantation apparatus comprising an electric conductor tube which is extended along said predetermined direction and which has an inner wall operable as a target section, electron supplying means for supplying said target section with a primary electron to emit a secondary electron from said target section and to thereby irradiate said secondary electron to the substrate, the improvement wherein said electric conductor tube comprises: a first tube section located in proximity of said disk section; a second tube section which is electrically insulated from said first tube section and which is remote from said disk section in comparison with said first tube section in said predetermined direction; said second tube section being used as said target section; and ground means for grounding said first tube section to ground.
Claim 2
Dependent Claim
165 words
In an ion implantation apparatus for injecting an ion beam into a substrate by guiding said ion beam in a predetermined direction, said substrate being located on a disk section transversely of said predetermined direction, said ion implantation apparatus comprising an electric conductor tube which is extended along said predetermined direction and which has an inner wall operable as a target section, electron supplying means for supplying said target section with a primary electron to emit a secondary electron from said target section and to thereby irradiate said secondary electron to the substrate, the improvement wherein said electric conductor tube comprises: a first tube section located in proximity of said disk section; a second tube section which is electrically insulated from said first tube section and which is remote from said disk section in comparison with said first tube section in said predetermined direction; said second tube section being used as said target section; and ground means for grounding said first tube section to ground.
Claim 3
Dependent Claim
38 words
An ion implantation apparatus as claimed in claim 1, wherein said ground means comprises: a ground resistor for connecting said first tube section with earth; and a galvanometer for measuring an electric current passing through said ground resistor.
Claim 4
Dependent Claim
40 words
An ion implantation apparatus as claimed in claim 2, wherein said ground means further comprises: bias voltage supplying means for supplying a bias voltage to said first tube section so as to keep an electric potential at a predetermined potential.
Claim 5
Dependent Claim
278 words
In an ion implantation apparatus for injecting an ion beam into a substrate by guiding said ion beam in a predetermined direction, said substrate being located on a disk section transversely of said predetermined direction, said ion implantation apparatus comprising an electric conductor tube which is extended along said predetermined direction and which has an inner wall operable as a target section, electron supplying means for supplying said target section with a primary electron to emit a secondary electron from said target section to thereby irradiate said secondary electron to the substrate, the improvement wherein said electric conductor tube comprises: a first tube section located in proximity of said disk section, said first tube section being divided into first and second tube parts along said predetermined direction, said first and said second tube parts being movable to a prescribed direction perpendicular to said predetermined direction; a second tube section which is electrically insulated from said first tube section and which is remote from said disk section in comparison with said first tube section in said predetermined direction, said second tube section being used as said target section; a third tube section which is electrically insulated from said second tube section and which is farther from said disk section than said second tube section in said predetermined direction, said third tube section being divided into third and fourth tube parts along said predetermined direction, said third and said fourth tube parts being movable to said prescribed direction; and ground means for grounding said first tube section to ground; said ion implantation apparatus further comprising: moving means for moving said first through said fourth tube parts along said prescribed direction.
Claim 6
Dependent Claim
278 words
In an ion implantation apparatus for injecting an ion beam into a substrate by guiding said ion beam in a predetermined direction, said substrate being located on a disk section transversely of said predetermined direction, said ion implantation apparatus comprising an electric conductor tube which is extended along said predetermined direction and which has an inner wall operable as a target section, electron supplying means for supplying said target section with a primary electron to emit a secondary electron from said target section to thereby irradiate said secondary electron to the substrate, the improvement wherein said electric conductor tube comprises: a first tube section located in proximity of said disk section, said first tube section being divided into first and second tube parts along said predetermined direction, said first and said second tube parts being movable to a prescribed direction perpendicular to said predetermined direction; a second tube section which is electrically insulated from said first tube section and which is remote from said disk section in comparison with said first tube section in said predetermined direction, said second tube section being used as said target section; a third tube section which is electrically insulated from said second tube section and which is farther from said disk section than said second tube section in said predetermined direction, said third tube section being divided into third and fourth tube parts along said predetermined direction, said third and said fourth tube parts being movable to said prescribed direction; and ground means for grounding said first tube section to ground; said ion implantation apparatus further comprising: moving means for moving said first through said fourth tube parts along said prescribed direction.
Claim 7
Dependent Claim
69 words
An ion implantation apparatus as claimed in claim 4, wherein said moving means comprises: measuring means for measuring a generated current in said third tube section in relation with said ion beam to produce position signal representative of relationship between said third tube section and said ion beam; and driving means responsive to said position signal for driving said first through said fourth tube parts along said prescribed direction.
Claim 8
Dependent Claim
38 words
An ion implantation apparatus as claimed in claim 5, wherein said ground means comprises: a ground resistor for connecting said first tube section with ground; and a galvanometer for measuring an electric current passing through said ground resistor.
Claim 9
Dependent Claim
40 words
An ion implantation apparatus as claimed in claim 6, wherein said ground means further comprises: bias voltage supplying means for supplying a bias voltage to said first tube section so as to keep an electric potential at a predetermined potential.
References Cited (Backward Citations)
US4783597A
Cited
US4914292A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-18 | 1994-08-20 | 1995-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-18 | 1998-08-20 | 1999-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-18 | 2002-08-20 | 2003-02-19 | $7700.00 | Window Closed / Lapsed |