US4993396A
Expired / Lapsed
US
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Method for driving an insulated gate semiconductor device
Assignee: Fuji Electric Co Ltd
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Filing: 1989-09-11
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Granted: 1991-02-19
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Expires: 2009-09-11
Abstract
Abstract The present invention relates to a method for biasing and making conductive an insulated gate semiconductor device having main electrodes at both surfaces of a semiconductor substrate and a gate electrode at one surface. Charges are accumulated between the gate electrode and the main electrode at the opposite surface while a voltage is applied across the electrodes storing a charge. The element is made conductive by discharging the accumulated charges when a voltage is applied in the conductive direction to such semiconductor element. The device can be used to drive the primary side of an ignition system in an internal combustion engine.
Inventors
- 👤 Shunji Miura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:34
CPC Classifications
F; F02; F02P; F02P1/00; F02P1/08; F02P1/083
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
182 words
A method for biasing an insulated gate semiconductor device, of the type having gate and first main electrodes at one surface of a semiconductor substrate, a second main electrode at a second substrate surface, and a gate to second main electrode capacitance which is a multiple of the gate to first main electrode capacitance under low voltage conditions, comprising the steps of: (a) accumulating a charge between said gate and second main electrodes in response to a first voltage coupled across said main electrodes in a non-conductive polarity; (b) preventing leakage of said charge as it accumulates by providing electrical isolation for charges of the resulting polarity; and (c) causing the accumulated charge to discharge between said gate and first main electrodes in response to a second voltage applied across said main electrodes in the opposite polarity to said first voltage, thereby temporarily biasing said gate electrode to a potential adequate to cause the semiconductor device to enter a conductive state; whereby a bias of increased voltage results from the difference in inter-electrode capacitances and is effective to drive the semiconductor device.
Claim 2
Independent Claim
182 words
A method for biasing an insulated gate semiconductor device, of the type having gate and first main electrodes at one surface of a semiconductor substrate, a second main electrode at a second substrate surface, and a gate to second main electrode capacitance which is a multiple of the gate to first main electrode capacitance under low voltage conditions, comprising the steps of: (a) accumulating a charge between said gate and second main electrodes in response to a first voltage coupled across said main electrodes in a non-conductive polarity; (b) preventing leakage of said charge as it accumulates by providing electrical isolation for charges of the resulting polarity; and (c) causing the accumulated charge to discharge between said gate and first main electrodes in response to a second voltage applied across said main electrodes in the opposite polarity to said first voltage, thereby temporarily biasing said gate electrode to a potential adequate to cause the semiconductor device to enter a conductive state; whereby a bias of increased voltage results from the difference in inter-electrode capacitances and is effective to drive the semiconductor device.
Claim 3
Dependent Claim
24 words
The method of claim 1, further comprising the step of causing said semiconductor device to rapidly change from a conductive to a non-conductive state.
Claim 4
Dependent Claim
45 words
The method of claim 2, further comprising the step of causing a termination of current flow resulting from said change of the semiconductor device from a conductive to a non-conductive state, thereby generating an increased voltage in a primary winding of a coil connected thereto.
Claim 5
Dependent Claim
28 words
The method of claim 3, further comprising the step of coupling the resulting energy generated in the secondary winding of said coil to an ignition plug connected thereto.
Claim 6
Independent Claim
242 words
A method for providing electrical energy to an ignition plug of an internal combustion engine, utilizing an insulated gate semiconductor device of the type having gate and first main electrodes at the surface of a semiconductor substrate, a second main electrode at a second substrate surface, and a gate, to second main electrode capacitance which is a multiple of the gate to first main electrode capacitance under low voltage conditions, comprising the steps of: (a) rotating a flywheel magnet through the field of an ignition coil alternately to generate voltages of a first and reverse polarity in the primary winding of said coil; (b) accumulating a charge between said gate and second main electrodes in response to a first voltage coupled across said main electrodes in a non-conductive polarity; (c) preventing leakage of said charge as it accumulates by providing electrical isolation for charges of the resulting polarity; (d) causing the accumulated charge to discharge charge between said gate and first main electrodes in response to the reverse voltage applied across said main electrodes, thereby temporarily biasing said gate electrode to a potential adequate to cause the semiconductor device to enter a conductive state; (e) causing said semiconductor device to rapidly change from a conductive to a non-conductive state, thereby generating an increased voltage in the primary winding of said ignition coil; and (f) coupling resulting energy generated in the secondary winding of said coil to the ignition plug of the engine.
Claim 7
Independent Claim
242 words
A method for providing electrical energy to an ignition plug of an internal combustion engine, utilizing an insulated gate semiconductor device of the type having gate and first main electrodes at the surface of a semiconductor substrate, a second main electrode at a second substrate surface, and a gate, to second main electrode capacitance which is a multiple of the gate to first main electrode capacitance under low voltage conditions, comprising the steps of: (a) rotating a flywheel magnet through the field of an ignition coil alternately to generate voltages of a first and reverse polarity in the primary winding of said coil; (b) accumulating a charge between said gate and second main electrodes in response to a first voltage coupled across said main electrodes in a non-conductive polarity; (c) preventing leakage of said charge as it accumulates by providing electrical isolation for charges of the resulting polarity; (d) causing the accumulated charge to discharge charge between said gate and first main electrodes in response to the reverse voltage applied across said main electrodes, thereby temporarily biasing said gate electrode to a potential adequate to cause the semiconductor device to enter a conductive state; (e) causing said semiconductor device to rapidly change from a conductive to a non-conductive state, thereby generating an increased voltage in the primary winding of said ignition coil; and (f) coupling resulting energy generated in the secondary winding of said coil to the ignition plug of the engine.
Claim 8
Dependent Claim
180 words
An ignition circuit for an internal combustion engine, comprising: (a) inductive means for alternately coupling voltages of a first and a reverse polarity across first and second circuit points; (b) an insulated gate semiconductor device having first and second main electrodes respect coupled to said first and second points, and having a gate electrode; (c) first means, coupling said gate electrode to said first point, for coupling voltages of said polarity to said gate electrode and for preventing of charge from said gate electrode; (d) second means, coupled between said first main electrode and said first circuit point and responsive to reverse polarity voltages, for permitting discharge of said gate electrode via said second main electrode, thereby rendering said semiconductor device conductive; and (e) third means, coupled between said gate electrode and said second circuit point and responsive to said reverse polarity voltages, for causing said semiconductor device to become non-conductive; whereby, said semiconductor device having been rendered conductive by said discharge of the gate electrode, causes generation of ignition firing voltages in said inductive means upon being rendered non-conductive.
Claim 9
Dependent Claim
180 words
An ignition circuit for an internal combustion engine, comprising: (a) inductive means for alternately coupling voltages of a first and a reverse polarity across first and second circuit points; (b) an insulated gate semiconductor device having first and second main electrodes respect coupled to said first and second points, and having a gate electrode; (c) first means, coupling said gate electrode to said first point, for coupling voltages of said polarity to said gate electrode and for preventing of charge from said gate electrode; (d) second means, coupled between said first main electrode and said first circuit point and responsive to reverse polarity voltages, for permitting discharge of said gate electrode via said second main electrode, thereby rendering said semiconductor device conductive; and (e) third means, coupled between said gate electrode and said second circuit point and responsive to said reverse polarity voltages, for causing said semiconductor device to become non-conductive; whereby, said semiconductor device having been rendered conductive by said discharge of the gate electrode, causes generation of ignition firing voltages in said inductive means upon being rendered non-conductive.
Claim 10
Dependent Claim
18 words
An ignition circuit as in claim 6, in which said semiconductor device is an insulated gate bipolar transistor.
Claim 11
Dependent Claim
16 words
An ignition circuit as in claim 6, in which said first and second means comprises diodes.
Claim 12
Dependent Claim
34 words
An ignition circuit as in claim 6, 7 or 8, in which said third means comprises a transistor having a resistive voltage divider coupling its control electrode between said first and second circuit points.
Claim 13
Dependent Claim
34 words
An ignition circuit as in claim 6, 7 or 8, in which said third means comprises a thyristor having a resistive voltage divider coupling its control electrode between said first and second circuit points.
Claim 14
Dependent Claim
122 words
An ignition circuit for an internal combustion engine, comprising: (a) an ignition coil having a primary winding coupled across first and second circuit points and a secondary winding for supplying energy to an ignition plug; (b) an insulated gate semiconductor device having a first main electrode, a second main electrode coupled to said second point, and a gate electrode; (c) a first diode coupled between said gate electrode and said first point; (d) a second diode coupled between said first main electrode and said first point; (e) a semiconductor device having main electrodes coupled to said gate electrode and said first point, and having a control electrode; and (f) a voltage divider coupling said control electrode to said first and second points.
Claim 15
Dependent Claim
122 words
An ignition circuit for an internal combustion engine, comprising: (a) an ignition coil having a primary winding coupled across first and second circuit points and a secondary winding for supplying energy to an ignition plug; (b) an insulated gate semiconductor device having a first main electrode, a second main electrode coupled to said second point, and a gate electrode; (c) a first diode coupled between said gate electrode and said first point; (d) a second diode coupled between said first main electrode and said first point; (e) a semiconductor device having main electrodes coupled to said gate electrode and said first point, and having a control electrode; and (f) a voltage divider coupling said control electrode to said first and second points.
Claim 16
Dependent Claim
21 words
An ignition circuit as in claim 11, additionally comprising a third diode coupled between said gate electrode and said second point.
Claim 17
Dependent Claim
22 words
An ignition circuit as in claim 11 or 12, in which said insulated gate semiconductor device is an insulated gate bipolar transistor.
Claim 18
Dependent Claim
31 words
An ignition circuit as in claim 11 or 12, in which said insulated gate semiconductor device is an insulated gate bipolar transistor, and said first and second diodes are zener diodes.
Claim 19
Dependent Claim
41 words
An ignition circuit as in claim 11, in which said semiconductor device is a transistor and said voltage divider comprises two resistive elements in series coupled between said first and second circuit points, with the midpoint coupled to said control electrode.
Claim 20
Dependent Claim
40 words
An ignition circuit as in claim 12, in which said semiconductor device is a thyristor and said voltage divider comprises two resistive elements in series coupled between said first and second points, with the midpoint coupled to said control electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-18 | 1994-08-20 | 1995-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-18 | 1998-08-20 | 1999-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-18 | 2002-08-20 | 2003-02-19 | $7700.00 | Window Closed / Lapsed |