US4990972A
Expired / Lapsed
US
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Semiconductor light emitting device
Assignee: Ricoh Research Institute of General Electronics Co Ltd
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Filing: 1989-09-08
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Granted: 1991-02-05
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Expires: 2009-09-08
Abstract
Abstract A semiconductor light emitting device comprises a semiconductor substrate of a first conductivity type; an electric current blocking layer formed on one main face of the substrate and including a semiconductor of a second conductivity type opposite to the first conductivity type and having an opening reaching the main face; a first semiconductor layer of the first conductivity type formed on the electric current blocking layer and a portion of the main face on which the opening is disposed; a second semiconductor layer stacked on the first semiconductor layer and forming a hetero-junction together with the first semiconductor layer; a semiconductor layer for electrode of the second conductivity type formed on the second semiconductor layer and having a window reaching the second conductor layer in a position corresponding to the opening; a first electrode metallic layer formed on the electrode semiconductor layer except for the window; and a second electrode metallic layer formed on the other main face of the substrate. The window has a flat shape composed of a substantially circular or rectangular shape and has a size substantially less than the size of the opening. Portions of the first and second semiconductor layers corresponding to the opening function as a light emitting region by flowing an electric current between the first and second electrode metallic layers, and a light generated from the light emitting region is outputted through the window in a direction substantially perpendicular to the substrate.
Inventors
- 👤 Shiro Satoh
- 👤 Noriaki Onodera
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:39
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18308; H01S5/18338; H01S5/40; H01S5/42; H01S5/423; H10H20/01; H10H20/011; H10H20/012; H10H20/013; H10H20/018; H10H20/81; H10H20/819; H10H29/00; H10H29/10; H10H29/14; H01S5/30; H01S5/32; H01S5/3202; H10H20/832
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
326 words
A semiconductor light emitting device comprising: a semiconductor substrate of a first conductivity type having an azimuth plane (100); an electric current blocking layer stacked on one main face of said substrate and including a semiconductor of a second conductivity type opposite to the first conductivity type; an opening formed in said electric current blocking layer by wet etching through a substantially square mask substantially inclined by 45° with respect to a direction [011] so as to reach said one main face of said substrate and mainly defined by a side face surrounded by a face approximately composed of a zone plane (100); a first semiconductor layer of the first conductivity type stacked on said electric current blocking layer and a portion of said one main face of said substrate on which said opening is formed; a second semiconductor layer stacked on said first semiconductor layer and forming a hetero-junction together with said first semiconductor layer; a semiconductor layer for electrode of the second conductivity type stacked on said second semiconductor layer; a window formed in said semiconductor layer for electrode so as to correspond to said opening and to reach said second semiconductor layer, said window being formed in a flat shape composed of a substantially circular or rectangular shape, a size of said window being substantially less than that of said opening; a first electrode metallic layer formed on said semiconductor layer for electrode except said window; and a second electrode metallic layer formed on another main face of said substrate; said opening being formed in such a manner that portions of said first semiconductor layer and said second semiconductor layer corresponding to said opening function as a light emitting region and a light generated from the light emitting region is outputted through said window in a direction substantially perpendicular to said semiconductor substrate when an electric current flows between said first electrode metallic layer and said second electrode metallic layer through said opening.
Claim 2
Dependent Claim
326 words
A semiconductor light emitting device comprising: a semiconductor substrate of a first conductivity type having an azimuth plane (100); an electric current blocking layer stacked on one main face of said substrate and including a semiconductor of a second conductivity type opposite to the first conductivity type; an opening formed in said electric current blocking layer by wet etching through a substantially square mask substantially inclined by 45° with respect to a direction [011] so as to reach said one main face of said substrate and mainly defined by a side face surrounded by a face approximately composed of a zone plane (100); a first semiconductor layer of the first conductivity type stacked on said electric current blocking layer and a portion of said one main face of said substrate on which said opening is formed; a second semiconductor layer stacked on said first semiconductor layer and forming a hetero-junction together with said first semiconductor layer; a semiconductor layer for electrode of the second conductivity type stacked on said second semiconductor layer; a window formed in said semiconductor layer for electrode so as to correspond to said opening and to reach said second semiconductor layer, said window being formed in a flat shape composed of a substantially circular or rectangular shape, a size of said window being substantially less than that of said opening; a first electrode metallic layer formed on said semiconductor layer for electrode except said window; and a second electrode metallic layer formed on another main face of said substrate; said opening being formed in such a manner that portions of said first semiconductor layer and said second semiconductor layer corresponding to said opening function as a light emitting region and a light generated from the light emitting region is outputted through said window in a direction substantially perpendicular to said semiconductor substrate when an electric current flows between said first electrode metallic layer and said second electrode metallic layer through said opening.
Claim 3
Dependent Claim
31 words
A semiconductor light emitting device according to claim 1, in which said second semiconductor layer comprises a single semiconductor layer and forms a single hetero-junction together with said first semiconductor layer.
Claim 4
Dependent Claim
34 words
A semiconductor light emitting device according to claim 1, in which said second semiconductor layer comprises two semiconductor layers stacked with each other and forms a double hetero-junction together with said first semiconductor layer.
Claim 5
Dependent Claim
54 words
A semiconductor light emitting device according to claim 1, in which the device is arranged in a one or two-dimensional array and a groove for separating elements from each other is formed by dry etching in an intermediate portion of the adjacent light emitting regions and has a wall substantially perpendicular to said substrate.
Claim 6
Dependent Claim
37 words
A semiconductor light emitting device according to claim 1, in which said electric current blocking layer, said first semiconductor layer and said second semiconductor layer are formed while a step shape of said opening is substantially held.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-04 | 1994-08-06 | 1995-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-04 | 1998-08-06 | 1999-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-04 | 2002-08-06 | 2003-02-05 | $7700.00 | Window Closed / Lapsed |