US4985776A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of driving solid-state imaging element
Assignee: NEC Electronics Corp
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Filing: 1989-11-22
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Granted: 1991-01-15
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Expires: 2009-11-22
Abstract
Abstract In a method of driving a solid-state imaging element, an operation of reading charges from a photoelectric conversion element to a vertical transfer register of an imaging region and an operation of clearing charges by discharging them to an overflow drain are performed plurality of time within one field period.
Inventors
- 👤 Yukio Taniji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:40
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H04; H04N; H04N25/00; H04N25/50; H04N25/53
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
174 words
A method of driving a solid-state imaging element which includes a semiconductor substrate formed of a first type of semiconductor material, and a well, of a second, different type of semiconductor material, formed on said semiconductor substrate, said imaging element further including an imaging region having a photoelectric conversion element formed in said well so as to provide a vertical-type overflow drain structure without a separately-formed overflow drain, a readout gate adjacent thereto, a vertical transfer register, and a storage region having a vertical transfer register and a horizontal transfer register, said method comprising the steps of: driving said vertical transfer registers of said imaging and storage regions independently by different application pulses, said vertical-type overflow drain structure formed in said imaging region performing a clear operation of charges; and performing an operation of transferring charges from said photoelectric conversion element to said vertical transfer register of said imaging region and an operation of clearing charges by discharging the charges to said vertical-type overflow drain structure a plurality of times within one field period.
Claim 2
Independent Claim
174 words
A method of driving a solid-state imaging element which includes a semiconductor substrate formed of a first type of semiconductor material, and a well, of a second, different type of semiconductor material, formed on said semiconductor substrate, said imaging element further including an imaging region having a photoelectric conversion element formed in said well so as to provide a vertical-type overflow drain structure without a separately-formed overflow drain, a readout gate adjacent thereto, a vertical transfer register, and a storage region having a vertical transfer register and a horizontal transfer register, said method comprising the steps of: driving said vertical transfer registers of said imaging and storage regions independently by different application pulses, said vertical-type overflow drain structure formed in said imaging region performing a clear operation of charges; and performing an operation of transferring charges from said photoelectric conversion element to said vertical transfer register of said imaging region and an operation of clearing charges by discharging the charges to said vertical-type overflow drain structure a plurality of times within one field period.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-14 | 1994-07-16 | 1995-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-14 | 1998-07-16 | 1999-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-14 | 2002-07-16 | 2003-01-15 | $7700.00 | Window Closed / Lapsed |