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US4984894A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of and apparatus for measuring film thickness

Assignee: Dainippon Screen Manufacturing Co Ltd
•
Filing: 1989-08-16
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Granted: 1991-01-15
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Expires: 2009-08-16
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Abstract

Abstract A method of and an apparatus for measuring the thickness of a first thin film which is the uppermost layer of a sample formed by two or more stacked thin films. Light is transmitted through the first thin film but absorbed by a second thin film positioned directly under the first thin film. The spectrum of light reflected by the sample is detected to obtain the thickness of the first thin film.

Inventors

  • 👤 Noriyuki Kondo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 13:48
CPC Classifications
G; G01; G01B; G01B11/00; G01B11/02; G01B11/06; G01B11/0616; G01B11/0625

Claims Analysis

Total Claims: 17
Claim 1
Independent Claim 148 words
A method of determining the thickness of a layer, the method comprising: providing a sample which includes (1) a substrate, (2) a first layer, the first layer being the uppermost layer of the sample and (3) a second layer, the second layer being located between the first layer and the substrate, the second layer being located directly under the first layer; irradiating the sample such that a first component of light is reflected by a first surface of the first layer, such that second and third components of the light are transmitted through the first layer, such that the second component is reflected at an interface between the first layer and the second layer of the sample and such that the third component is absorbed by the second layer; detecting the spectrum of the reflected components; and using the spectrum to determine the thickness of the first layer.
Claim 2
Independent Claim 148 words
A method of determining the thickness of a layer, the method comprising: providing a sample which includes (1) a substrate, (2) a first layer, the first layer being the uppermost layer of the sample and (3) a second layer, the second layer being located between the first layer and the substrate, the second layer being located directly under the first layer; irradiating the sample such that a first component of light is reflected by a first surface of the first layer, such that second and third components of the light are transmitted through the first layer, such that the second component is reflected at an interface between the first layer and the second layer of the sample and such that the third component is absorbed by the second layer; detecting the spectrum of the reflected components; and using the spectrum to determine the thickness of the first layer.
Claim 3
Dependent Claim 13 words
The method of claim 1, wherein the first layer is a thin film.
Claim 4
Dependent Claim 13 words
The method of claim 12, wherein the second layer is a thin film.
Claim 5
Dependent Claim 33 words
The method of claim 3, wherein the sample is a semiconductor device, the first layer being formed of silicon oxide, the second layer being formed of polysilicon, the substrate being formed of silicon.
Claim 6
Dependent Claim 19 words
The method of claim 4, wherein the step of irradiating the sample includes irradiating the sample with ultraviolet light.
Claim 7
Dependent Claim 32 words
The method of claim 5, wherein the sample includes a third layer, the third layer being located between the second layer and the substrate, the third layer being formed of silicon oxide.
Claim 8
Dependent Claim 40 words
The method of claim 1, further comprising: obtaining correlation data representative of the character of light reflected by the sample and the thickness of the first layer; and using the correlation data to determine the thickness of the first layer.
Claim 9
Dependent Claim 31 words
The method of claim 7, wherein the step of obtaining the correlation data includes: storing optical constants of the first layer in a memory; and subsequently, arithmetically processing the optical constants.
Claim 10
Dependent Claim 18 words
The method of claim 8, wherein the optical constants include an index of refraction and an absorption coefficient.
Claim 11
Dependent Claim 28 words
The method of claim 7, wherein the correlation data is representative of a correlation between an extreme value of the spectrum and the thickness of the first layer.
Claim 12
Dependent Claim 30 words
The method of claim 7, wherein the correlation data is representative of a correlation between the energy of light reflected by the sample and the thickness of the first layer.
Claim 13
Independent Claim 130 words
An apparatus for determining the thickness of a layer, the apparatus comprising: means for irradiating a sample such that a first component of light is reflected by a first surface of an uppermost layer of the sample, such that second and third components of the light are transmitted through the uppermost layer, such that the second component is reflected at an interface between the uppermost layer and a second layer of the sample which is located directly under the uppermost layer and which is located between the uppermost layer and a substrate of the sample and such that the third component is absorbed by the second layer; means for detecting the spectrum of the reflected components; and means for using the spectrum to determine the thickness of the uppermost layer.
Claim 14
Independent Claim 130 words
An apparatus for determining the thickness of a layer, the apparatus comprising: means for irradiating a sample such that a first component of light is reflected by a first surface of an uppermost layer of the sample, such that second and third components of the light are transmitted through the uppermost layer, such that the second component is reflected at an interface between the uppermost layer and a second layer of the sample which is located directly under the uppermost layer and which is located between the uppermost layer and a substrate of the sample and such that the third component is absorbed by the second layer; means for detecting the spectrum of the reflected components; and means for using the spectrum to determine the thickness of the uppermost layer.
Claim 15
Dependent Claim 16 words
The apparatus of claim 12, wherein the irradiating means includes a lamp for generating ultraviolet light.
Claim 16
Dependent Claim 12 words
The apparatus of claim 13, wherein the lamp is a deuterium lamp.
Claim 17
Dependent Claim 12 words
The apparatus of claim 13, wherein the lamp is a xenon lamp.

References Cited (Backward Citations)

US4352561A Cited
US4555767A Cited
US4618262A Cited
JPS60231125A Cited
US4645349A Cited
US4676647A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-01-14 1994-07-16 1995-01-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-01-14 1998-07-16 1999-01-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-01-14 2002-07-16 2003-01-15 $7700.00 Window Closed / Lapsed

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