US4983419A
Expired / Lapsed
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Method for generating thin layers on a silicone base
Assignee: Siemens AG
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Filing: 1989-07-21
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Granted: 1991-01-08
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Expires: 2009-07-21
Abstract
Abstract The invention provides a method for generating thin layers on a silicon base having a high purity, thermal stability and good dielectric properties wherein non-functionalized organosiloxanes with alkyl groups or alkyl and aryl groups are photochemically polymerized and/or cross-linked by means of pulsed laser radiation with a wavelength of less than 400 nm where the pulse duration is 10 ps to 1 ms, the pulse frequency is 1 Hz to 10 KHz and the energy density is at least 1 J/cm 2 and the irradiation takes placed with one or more pulses. The layers can be used as passivating and insulating layers for semiconductor components and circuits.
Inventors
- 👤 Hans-Joachim Henkel
- 👤 Helmut Markert
- 👤 Wolfgang Roth
- 👤 Wolfgang Kautek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 21:32
CPC Classifications
C; C08; C08J; C08J3/00; C08J3/28; C09; C09D; C09D183/00; C09D183/04; G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6538; H10P14/6542; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C08J2383/00; C08J2383/04
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
106 words
A method for generating a thin layer on a silicone base comprising the step of photo hardening a non-functionalized organosiloxane having alkyl groups or alyl and aryl groups, or mixtures of such organosiloxanes, so as to photochemically polymerize and/or cross-link the organosiloxane, said step of photo hardening being accomplished by irradiating the organosiloxane with pulsed laser radiation with a wavelength of less than 400 nm, wherein the pulse duration is 10 ps to 1 ms, the pulse frequency is 1 Hz to 10 kHz and the energy density is at least 1 J/cm 2 , and wherein the irradiation takes place with one or more pulses.
Claim 2
Independent Claim
106 words
A method for generating a thin layer on a silicone base comprising the step of photo hardening a non-functionalized organosiloxane having alkyl groups or alyl and aryl groups, or mixtures of such organosiloxanes, so as to photochemically polymerize and/or cross-link the organosiloxane, said step of photo hardening being accomplished by irradiating the organosiloxane with pulsed laser radiation with a wavelength of less than 400 nm, wherein the pulse duration is 10 ps to 1 ms, the pulse frequency is 1 Hz to 10 kHz and the energy density is at least 1 J/cm 2 , and wherein the irradiation takes place with one or more pulses.
Claim 3
Dependent Claim
30 words
A method according to claim 1 wherein the mol ratio of all the aryl groups to all the alkyl groups of all the organosiloxanes used is not greater than 2.0.
Claim 4
Dependent Claim
30 words
A method according to claim 2 wherein the mol ratio of all the aryl groups to all the alkyl groups of all the organosiloxanes used is from 0.001 to 0.5.
Claim 5
Dependent Claim
20 words
A method according to claim 1 wherein the pulsed laser radiation has a wavelength of from 190 to 300 nm.
Claim 6
Dependent Claim
26 words
A method according to claim 1 wherein the organosiloxane employed is a poly(dimethyl siloxane) and wherein the pulsed laser radiation has a wavelength of 193 nm.
Claim 7
Dependent Claim
27 words
A method according to claim 1 wherein a poly(methylphenyl siloxane) is employed and wherein the irradiation takes place with a wavelength of from 240 to 280 nm.
Claim 8
Dependent Claim
21 words
A method according to claim 1 wherein small amounts of vinyl-group-containing siloxanes are added to the organosiloxane prior to photo hardening.
Claim 9
Dependent Claim
20 words
A method according to claim 7 wherein the amount of vinyl-group-containing siloxanes added is from 0.5 to 1.0 mass percent.
Claim 10
Dependent Claim
16 words
A method according to claim 1 wherein the irradiation is carried out in an oxygen-free atmosphere.
Claim 11
Dependent Claim
15 words
A method according to claim 1 wherein the irradiation is carried out through a mask.
Claim 12
Dependent Claim
21 words
A passivating and/or insulating layer for discrete semiconductor components and integrated semiconductor circuits formed according to the method of claim 1.
Claim 13
Dependent Claim
18 words
A structured passivating and/or insulating layer in a semiconductor circuit formed according to the method of claim 1.
Claim 14
Dependent Claim
21 words
A method according to claim 2 wherein the pulsed laser radiation has a wavelength of from 190 nm to 300 nm.
Claim 15
Dependent Claim
25 words
A method according to claim 2 wherein the organosiloxane is a poly(dimethyl siloxane) and the pulsed laser radiation has a wavelength of about 193 nm.
Claim 16
Dependent Claim
27 words
A method according to claim 2 wherein the organosiloxane is a poly(methylphenyl siloxane) and the pulsed laser radiation has a wavelength of from 240 to 280 n.
Claim 17
Dependent Claim
28 words
A method according to claim 2 wherein vinyl-group-containing siloxanes are added to the organosiloxane prior to irradiation in an amount of from b 0.5 to 1.0 mass percent.
Claim 18
Dependent Claim
15 words
A method according to claim 2 wherein the irradiation is carried out through a mask.
Claim 19
Dependent Claim
16 words
A method according to claim 2 wherein the irradiation is carried out in an oxygen-free atmosphere.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |