US4982252A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state imaging device
Assignee: Toshiba Corp
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Filing: 1988-03-30
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Granted: 1991-01-01
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Expires: 2008-03-30
Abstract
Abstract A solid state imaging device comprising a light receiving and accumulating element disposed at a surface area of a semiconductor substrate in a two-dimensional arrangement, a control electrode and a transfer electrode for transferring a signal charge which is photoelectrically converted by the light receiving element, and a light shield element for passing an incident light only toward to a predetermined portion of the light receiving element. These elements are suitably electrically insulated by the positions of insulation films. The control electrode constitutes a first electroconductive element disposed above the light receiving element and the transfer electrode so as to cover at least portions thereof. The imaging device further comprises a second electroconductive element disposed in direct contact with the lower surface of the first electroconductive element to lower the resistance thereof. The second electroconductive element may be constituted by a low resistance electrode or by the light shield element.
Inventors
- 👤 Yoshiyuki Matsunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:10
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/331; H10F77/334; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
172 words
A solid state imaging device comprising: a semiconductor substrate; light receiving and accumulating means disposed at a surface area of said semiconductor substrate in a two-dimensional arrangement for photoelectrically converting received incident light into a signal charge and for accumulating said signal charge; transfer means for transferring said signal charge; first electroconductive means, disposed above said light receiving and accumulating means and said transfer means to cover at least portions of said light receiving and accumulating means and said transfer means in a manner electrically insulated from said light receiving and accumulating means and said transfer means, for transferring said signal charge from said light receiving and accumulating means to said transfer means as a control electrode; light shield means for passing incident light only towards predetermined portions of said light receiving and accumulating means; and second electroconductive means, disposed below said first electroconductive means to directly contact a lower surface of said first electroconductive means over an area of said transfer means, for lowering the resistance of said first electroconductive means.
Claim 2
Dependent Claim
172 words
A solid state imaging device comprising: a semiconductor substrate; light receiving and accumulating means disposed at a surface area of said semiconductor substrate in a two-dimensional arrangement for photoelectrically converting received incident light into a signal charge and for accumulating said signal charge; transfer means for transferring said signal charge; first electroconductive means, disposed above said light receiving and accumulating means and said transfer means to cover at least portions of said light receiving and accumulating means and said transfer means in a manner electrically insulated from said light receiving and accumulating means and said transfer means, for transferring said signal charge from said light receiving and accumulating means to said transfer means as a control electrode; light shield means for passing incident light only towards predetermined portions of said light receiving and accumulating means; and second electroconductive means, disposed below said first electroconductive means to directly contact a lower surface of said first electroconductive means over an area of said transfer means, for lowering the resistance of said first electroconductive means.
Claim 3
Dependent Claim
46 words
The imaging device according to claim 1 wherein said transfer means comprises a plurality of transfer electrodes, and said second electroconductive means comprises a low resistance electrode disposed above and electrically insulated from said transfer electrode to cover at least the location of said transfer electrode.
Claim 4
Dependent Claim
22 words
The imaging device according to claim 2 wherein said low resistance electrode is made of polysilicon in which an impurity is doped.
Claim 5
Dependent Claim
21 words
The imaging device according to claim 2 wherein said low resistance electrode is made of a silicate of a refractory metal.
Claim 6
Dependent Claim
22 words
The imaging device according to claim 1 wherein said control electrode comprises a light transmitting polysilicon film made by ion-implanting an impurity.
Claim 7
Dependent Claim
33 words
The imaging device according to claim 1 wherein said light shield means is made of an aluminium film and disposed above a portion of said control electrode in a manner electrically insulated therefrom.
Claim 8
Dependent Claim
32 words
The imaging device according to claim 1 wherein said light shield means is disposed below said control electrode in direct contact therewith to act to lower the resistance of said control electrode.
Claim 9
Dependent Claim
18 words
The imaging device according to claim 7 wherein said control electrode comprises a light transmissible tin oxide film.
Claim 10
Dependent Claim
163 words
A solid state imaging device comprising: a semiconductor substrate; light receiving and accumulating means disposed at a surface area of said semiconductor substrate in a two-dimensional arrangement for photoelectrically transferring received light into a signal charge and for accumulating said signal charge; transfer means for transferring said signal charge; a first electroconductive region, located above said light receiving and accumulating means and said transfer means to cover at least portions of said light receiving and accumulating means and said transfer means in a manner electrically insulated from said light receiving and accumulating means and said transfer means, said first electroconductive region including a control electrode; and light shield means for passing incident light only towards a predetermined portion of said light receiving and accumulating means, said light shield means being disposed in direct contact with a lower surface of said first electroconductive region to act as a second electroconductive region over said transfer means to lower the resistance of said first electroconductive region.
Claim 11
Dependent Claim
163 words
A solid state imaging device comprising: a semiconductor substrate; light receiving and accumulating means disposed at a surface area of said semiconductor substrate in a two-dimensional arrangement for photoelectrically transferring received light into a signal charge and for accumulating said signal charge; transfer means for transferring said signal charge; a first electroconductive region, located above said light receiving and accumulating means and said transfer means to cover at least portions of said light receiving and accumulating means and said transfer means in a manner electrically insulated from said light receiving and accumulating means and said transfer means, said first electroconductive region including a control electrode; and light shield means for passing incident light only towards a predetermined portion of said light receiving and accumulating means, said light shield means being disposed in direct contact with a lower surface of said first electroconductive region to act as a second electroconductive region over said transfer means to lower the resistance of said first electroconductive region.
References Cited (Backward Citations)
US4394675A
Cited
US4743778A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-31 | 1994-07-02 | 1995-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-31 | 1998-07-02 | 1999-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-31 | 2002-07-02 | 2003-01-01 | $7700.00 | Window Closed / Lapsed |