US4979015A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insulated substrate for flip-chip integrated circuit device
Assignee: Texas Instruments Inc
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Filing: 1988-09-16
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Granted: 1990-12-18
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Expires: 2008-09-16
Abstract
Abstract A substrate for mounting a flip-chip on a metallized circuit on the upper surface of the substrate. The substrate is silicon carbide condensed on a graphite or silicon core. The upper surface of the silicon carbide has a layer of insulating material comprised of silicon oxide, silicon nitride, aluminum nitride, boron nitride, an organic insulator such as polyimide, and diamond. The insulator prevents inadvertent shorting of the integrated circuit. The insulating layer can be deposited on the silicon carbide by such processes as chemical vapor deposition, sputtering, spinning or roller coating.
Inventors
- 👤 Roger J. Stierman
- 👤 K. Gail Heinen
- 👤 Thomas Ramsey
- 👤 James F. Haefling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:11
CPC Classifications
H; H10; H10W; H10W90/00; H10W90/401; H10W70/00; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H10W70/67; H10W70/69; H10W70/692; H10W99/00; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/50; H10W72/551; H10W72/552; H10W72/5522
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
55 words
A flip-chip substrate comprised of: a layer of silicon carbide; an insulating layer deposited on the upper surface of the silicon carbide layer, wherein the insulating layer is for supporting metallized circuitry to which a flip-chip can be attached, the insulating layer having a thickness substantially less than the thickness of the silicon carbide layer.
Claim 2
Dependent Claim
55 words
A flip-chip substrate comprised of: a layer of silicon carbide; an insulating layer deposited on the upper surface of the silicon carbide layer, wherein the insulating layer is for supporting metallized circuitry to which a flip-chip can be attached, the insulating layer having a thickness substantially less than the thickness of the silicon carbide layer.
Claim 3
Dependent Claim
21 words
The substrate of claim 1 wherein the thickness of the silicon carbide layer is in the range 0.5 to 2.0 microns.
Claim 4
Dependent Claim
16 words
The substrate of claim 1 wherein the insulating layer is comprised of an oxide of silicon.
Claim 5
Dependent Claim
26 words
The substrate of claim 1 wherein the insulating layer is comprised of a material selected from the group comprising: silicon nitride; aluminum nitride; and boron nitride.
Claim 6
Dependent Claim
15 words
The substrate of claim 1 wherein the insulating layer is comprised of an organic compound.
Claim 7
Dependent Claim
12 words
The substrate of claim 5 wherein the organic compound is a polyimide.
Claim 8
Dependent Claim
13 words
The substrate of claim 1 wherein the insulating layer is comprised of diamond.
Claim 9
Dependent Claim
59 words
A flip-chip substrate having a coefficient of thermal expansion substantially equal to that of silicon, comprising: a layer of silicon carbide; an insulating layer deposited on the upper surface of the silicon carbide layer, wherein the insulating layer is for supporting circuitry, the insulating layer having a thickness substantially less than the thickness of the layer of silicon carbide.
Claim 10
Dependent Claim
59 words
A flip-chip substrate having a coefficient of thermal expansion substantially equal to that of silicon, comprising: a layer of silicon carbide; an insulating layer deposited on the upper surface of the silicon carbide layer, wherein the insulating layer is for supporting circuitry, the insulating layer having a thickness substantially less than the thickness of the layer of silicon carbide.
Claim 11
Dependent Claim
15 words
The flip-chip substrate of claim 8 wherein the substrate is comprised of semiconductor grade materials.
Claim 12
Dependent Claim
17 words
The flip-chip substrate of claim 8 wherein the insulating layer is comprised of an oxide of silicon.
Claim 13
Dependent Claim
43 words
The flip-chip substrate of claim 10 wherein the oxide of silicon is formed by depositing a layer on the layer of silicon carbide, and oxidizing the deposited layer, the deposited layer comprised of a material from the group comprising polysilicon and epitaxial silicon.
Claim 14
Dependent Claim
28 words
The flip-chip substrate of claim 10 wherein the oxide of silicon is formed by sputtering onto the layer of silicon carbide from a target made of silicon oxide.
Claim 15
Dependent Claim
27 words
The flip-chip substrate of claim 8 wherein the insulating layer is comprised of a material selected from the group comprising: silicon nitride; aluminum nitride; and boron nitride.
Claim 16
Dependent Claim
14 words
The flip-chip substrate of claim 13 wherein the insulating layer is formed by sputtering.
Claim 17
Dependent Claim
15 words
The flip-chip substrate of claim 8 wherein the insulating layer is comprised of a polyimide.
Claim 18
Dependent Claim
19 words
The flip-chip substrate of claim 15 wherein the insulating layer is formed by spinning on the silicon carbide layer.
Claim 19
Dependent Claim
20 words
The flip-chip substrate of claim 15 wherein the insulating layer is formed by roller coating on the silicon carbide layer.
Claim 20
Dependent Claim
71 words
A flip-chip substrate having a coefficient of thermal expansion substantially equal to that of silicon, comprising: a core having a coefficient of thermal expansion substantially equal to that of silicon; a layer of silicon nitrade covering the core; and an insulating layer covering the upper surface of the silicon nitrade upon which circuitry can be disposed; wherein the core is comprised of a material from the group comprising graphite or silicon.
Claim 21
Dependent Claim
71 words
A flip-chip substrate having a coefficient of thermal expansion substantially equal to that of silicon, comprising: a core having a coefficient of thermal expansion substantially equal to that of silicon; a layer of silicon nitrade covering the core; and an insulating layer covering the upper surface of the silicon nitrade upon which circuitry can be disposed; wherein the core is comprised of a material from the group comprising graphite or silicon.
Claim 22
Dependent Claim
41 words
The substrate of claim 18 wherein the coefficient of thermal expansion of the substrate is in the range of from three times ten to the minus 6 to four times ten to the minus 6 inches per inch per degree centigrade.
Claim 23
Dependent Claim
30 words
The substrate of claim 18 wherein the insulating layer is comprised of a material selected from the group: an oxide of silicon; silicon nitride; aluminum nitride; boron nitride; and polyimide.
Claim 24
Dependent Claim
13 words
The substrate of claim 18 wherein the insulating layer is comprised of diamond.
Claim 25
Dependent Claim
24 words
The substrate of claim 18 wherein the layer of silicon nitride is deposited on the core by condensing the silicon nitride upon the core.
Claim 26
Independent Claim
74 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the steps of: depositing a layer on a silicon carbide layer, the deposited layer having a thickness substantially less than the thickness of the silicon carbide layer; and oxidizing the deposited layer in a furnace; wherein the deposited layer is comprised of a meterial taken from the group of polysilicon and epitaxial silicon.
Claim 27
Independent Claim
74 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the steps of: depositing a layer on a silicon carbide layer, the deposited layer having a thickness substantially less than the thickness of the silicon carbide layer; and oxidizing the deposited layer in a furnace; wherein the deposited layer is comprised of a meterial taken from the group of polysilicon and epitaxial silicon.
Claim 28
Independent Claim
50 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the steps of: sputtering an insulating layer onto a layer of silicon carbide from a target selected from the group: silicon oxide; silicon nitride; aluminum nitride; and boron nitride.
Claim 29
Independent Claim
50 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the steps of: sputtering an insulating layer onto a layer of silicon carbide from a target selected from the group: silicon oxide; silicon nitride; aluminum nitride; and boron nitride.
Claim 30
Independent Claim
35 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the steps of: spinning a polyimide insulating layer upon a layer of silicon carbide.
Claim 31
Independent Claim
35 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the steps of: spinning a polyimide insulating layer upon a layer of silicon carbide.
Claim 32
Independent Claim
39 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the steps of: depositing an insulating layer of diamond on a silicon carbide layer by microwave chemical deposition.
Claim 33
Independent Claim
39 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the steps of: depositing an insulating layer of diamond on a silicon carbide layer by microwave chemical deposition.
Claim 34
Independent Claim
42 words
The method of claims 23, 24, 25, or 26 further comprising the step of forming a layer of silicon nitride by condensing silicon nitride upon a core, the core being comprised of a material taken from the group comprising graphite and silicon.
Claim 35
Independent Claim
36 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the step of: roller coating a polyimide insulating layer upon a layer of silicon carbide.
Claim 36
Independent Claim
36 words
A method of fabricating a flip-chip substrate having a coefficient of thermal expansion substantially the same as that of silicon, comprising the step of: roller coating a polyimide insulating layer upon a layer of silicon carbide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-17 | 1994-06-18 | 1994-12-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-17 | 1998-06-18 | 1998-12-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-17 | 2002-06-18 | 2002-12-18 | $7700.00 | Window Closed / Lapsed |