Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
93 words
An integrated circuit structure, comprising: a semiconductor substrate, a first layer of insulative material over the substrate, a layer of conductive material over the first layer of insulative material, a second layer of insulative material over the layer of conductive material, a layer of semiconductive material over the second layer of insulative material, with an integrated circuit fabricated thereon, means for applying respective signal connections to respective ones of the substrate and conductive layer, and means for connecting the substrate and conductive layer to locations on the integrated circuit requiring their respective signals.
Claim 2
Dependent Claim
93 words
An integrated circuit structure, comprising: a semiconductor substrate, a first layer of insulative material over the substrate, a layer of conductive material over the first layer of insulative material, a second layer of insulative material over the layer of conductive material, a layer of semiconductive material over the second layer of insulative material, with an integrated circuit fabricated thereon, means for applying respective signal connections to respective ones of the substrate and conductive layer, and means for connecting the substrate and conductive layer to locations on the integrated circuit requiring their respective signals.
Claim 3
Dependent Claim
17 words
The integrated circuit structure of claim 1, wherein the signal connections comprise ground and power supply connections.
Claim 4
Dependent Claim
27 words
The integrated circuit structure of claim 2, wherein the power supply connection is applied to the substrate and the ground connection is applied to the conductive layer.
Claim 5
Dependent Claim
17 words
The integrated circuit structure of claim 1, wherein the conductive layer comprises a heavily doped semiconductor material.
Claim 6
Dependent Claim
19 words
The integrated circuit structure of claim 4, wherein the substrate, semiconductive layer and conductive layer are formed from silicon.
Claim 7
Dependent Claim
19 words
The integrated circuit structure of claim 1, wherein the first and second insulative layers are formed from silicon dioxide.
Claim 8
Dependent Claim
117 words
An integrated circuit structure, comprising: a semiconductor substrate, a plurality of layers of conductive material disposed over the substrate in succession, a plurality of layers of insulative material respectively disposed immediately under each of the conductive layers, with an insulative layer for each conductive layer, an additional layer of insulative material over the uppermost conductive layer, a layer of semiconductive material over the additional insulative layer, with an integrated circuit fabricated thereon, means for supplying ground, power supply and signal connections to respective ones of the substrate and conductive layers, and means connecting the substrate and conductive layers to locations on the integrated circuit requiring a ground, power supply or signal connection, as the case may be.
Claim 9
Dependent Claim
117 words
An integrated circuit structure, comprising: a semiconductor substrate, a plurality of layers of conductive material disposed over the substrate in succession, a plurality of layers of insulative material respectively disposed immediately under each of the conductive layers, with an insulative layer for each conductive layer, an additional layer of insulative material over the uppermost conductive layer, a layer of semiconductive material over the additional insulative layer, with an integrated circuit fabricated thereon, means for supplying ground, power supply and signal connections to respective ones of the substrate and conductive layers, and means connecting the substrate and conductive layers to locations on the integrated circuit requiring a ground, power supply or signal connection, as the case may be.
Claim 10
Dependent Claim
30 words
The integrated circuit structure of claim 7, wherein the power supply and ground connections are applied to respective ones of the substrate and the first conductive layer above the substrate.
Claim 11
Dependent Claim
31 words
The integrated circuit structure of claim 8, wherein the power supply connection is applied to the substrate and the ground connection is applied to the first conductive layer above the substrate.
Claim 12
Dependent Claim
17 words
The integrated circuit structure of claim 7, wherein the conductive layers comprise a heavily doped semiconductor material.
Claim 13
Dependent Claim
19 words
The integrated circuit structure of claim 10, wherein the substrate, semiconductive layer and conductive layers are formed from silicon.
Claim 14
Dependent Claim
16 words
The integrated circuit structure of claim 7, wherein the insulative layers are formed from silicon dioxide.