Memory device having operating function

Claim 2

A memory device having an operating function comprising: a first memory cell array, having memory cells arranged in a matrix form of m rows x n columns; first readout control means, for selecting one of the rows of said first memory cell array, to read out n-bit data therefrom; first write-in control means, for selecting one of the rows of said first memory cell array, to write n-bit data therein; register means arranged independent from said first memory cell array, for storing n-bit data therein; and logical operation means for logically processing n-bit data read out from said first memory cell array, under a control of said first readout control means, with the content of a corresponding one of bits of n-bit data stored in said register means used as a variable to derive the result of logical operation for each bit, n-bit data constructed by bits of the result of logical operation being written into a desired one of the rows of said first memory cell array, under a control of said first write-in control means, wherein said first memory cell array, first readout control means, first write-in control means, register means, and logical operation means are formed in the same integrated circuit.

Claim 3

A memory device having an operating function according to claim 1, which further includes second write-in control means, arranged in said integrated circuit, for controlling the write-in operation of data into said register means and in which said second write-in control means writes n-bit data constructed by bits of the result of logical operation, obtained by means of said logical operation means, into said register means.

Claim 4

A memory device having an operating function according to claim 1, wherein said logical operation means includes exclusive-OR means for effecting the exclusive-OR operation between bits of data read out from said first memory cell array by means of said first readout control means and corresponding bits of data stored in said register means, to derive exclusive-0R data.

Claim 5

A memory device having an operating function according to claim 3, wherein said exclusive-OR means includes n exclusive-OR circuits which are connected to receive respective bits of data read out from said first memory cell array at one input terminal and respective bits of data stored in said register means at the other input terminal.

Claim 6

A memory device having an operating function according to claim 1, which further includes a second memory cell array, disposed separate from said first memory cell array in said integrated circuit, and second readout control means, formed in said integrated circuit, for controlling the data readout operation to select one row of said second memory cell array so as to read out n-bit data and in which said logical operation means performs the logical operation with the n-bit data read out from said second memory cell array by means of said second readout control means used as a variable.

Claim 7

A memory device having an operating function according to claim 1, which further includes a second memory cell array, disposed separate from said first memory cell array in said integrated circuit, and third write-in control means, formed in said integrated circuit, for controlling the data write-in operation to write n-bit, data into a selected one of the rows of said second memory cell array and in which said third write-in control means writes n-bit data constructed by bits of the result of logical operation, obtained by means of said logical operation means, into a selected one of the rows of said second memory cell array.

Claim 8

A memory device having an operating function according to claim 5, which further includes third write-in control means, formed in said integrated circuit, for controlling the data write-in operation to write n-bit data into said second memory cell array and in which said third write-in control means writes n-bit data constructed by bits of the result of logical operation, obtained by means of said logical operation means, into said second memory cell array.

Claim 9

A memory device having an operating function according to claim 5, wherein said logical operation means includes exclusive-OR means for effecting the exclusive-OR operation between bits of data read out from said first memory cell array by means of said first readout control means and corresponding bits of data stored in said register means, to derive exclusive-0R data, and OR means for effecting the logical operation between bits of data read out from said second memory cell array by means of said second readout control means and corresponding bits of data output from said exclusive-OR means, to derive logical sum data.

Claim 10

A memory device having an operating function according to claim 8, wherein said exclusive-OR means includes n exclusive-OR circuits which are connected to receive respective bits of data read out from said first memory cell array at one input terminal and respective bits of data stored in said register means at the other input terminal, and said OR means includes n OR circuits connected to receive respective bits of data read out from said second memory cell array at one input terminal and corresponding data output from said n exclusive-0R circuits at the other input terminal.

Claim 11

A memory device having an operating function, comprising: a first memory cell array, having memory cells arranged in a matrix form of m rows x n columns; first readout control means, for selecting one of the rows of said first memory cell array, to read out n-bit data therefrom; first write-in control means, for selecting one of the rows of said first memory cell array, to write n-bit data therein; a second memory cell array, disposed separate from said first memory cell array and having memory cells arranged in a matrix form of m rows x n columns; second readout control means, for selecting one of the rows of said second memory cell array, to read out n-bit data therefrom; second write-in control means, for selecting one of the rows of said first memory cell array, to write n-bit data therein; register means arranged independent from said first and second memory cell arrays, for storing n-bit data therein; second write-in control means, for writing n-bit data into said register means; first logical operation means, for logically processing n bit data read out from said first memory cell array, under a control of said first readout control means, together with corresponding bits of n-bit data stored in said register means, to derive the result of logical operation for each bit, n-bit data constructed by bits of the result of logical operation effected by said first logical means being written into a desired one of the rows of said first memory cell array, under a control of said first write-in control means, and second logical operation means, for logically processing n bit data read out from said second memory cell array, under a control of said second readout control means, together with corresponding bits of n-bit data constructed by bits of the result of logical operation obtained by said first logical operation means, to derive the result of logical operation for each bit, n-bit data constructed by bits of the result of logical operation effected by said second logical means being written into said register means, under a control of said second write-in control means, wherein said first and second memory cell arrays, first and second readout control means, first and second write-in control means, register means, and first and second logical operation means are formed in the same integrated circuit.

Claim 12

A memory device having an operating function, comprising: a first memory cell array, having memory cells arranged in a matrix form of m rows x n columns; first readout control means, for selecting one of the rows of said first memory cell array, to read out n-bit data therefrom; first write-in control means, for selecting one of the rows of said first memory cell array, to write n-bit data therein; a second memory cell array, disposed separate from said first memory cell array and having memory cells arranged in a matrix form of m rows x n columns; second readout control means, for selecting one of the rows of said second memory cell array, to read out n-bit data therefrom; second write-in control means, for selecting one of the rows of said first memory cell array, to write n-bit data therein; register means arranged independent from said first and second memory cell arrays, for storing n-bit data therein; second write-in control means, for writing n-bit data into said register means; first logical operation means, for logically processing n bit data read out from said first memory cell array, under a control of said first readout control means, together with corresponding bits of n-bit data stored in said register means, to derive the result of logical operation for each bit, n-bit data constructed by bits of the result of logical operation effected by said first logical means being written into a desired one of the rows of said first memory cell array, under a control of said first write-in control means, and second logical operation means, for logically processing n bit data read out from said second memory cell array, under a control of said second readout control means, together with corresponding bits of n-bit data constructed by bits of the result of logical operation obtained by said first logical operation means, to derive the result of logical operation for each bit, n-bit data constructed by bits of the result of logical operation effected by said second logical means being written into said register means, under a control of said second write-in control means, wherein said first and second memory cell arrays, first and second readout control means, first and second write-in control means, register means, and first and second logical operation means are formed in the same integrated circuit.

Claim 13

A memory device having an operating function according to claim 10, wherein said first logical operation means includes exclusive-OR means for effecting the exclusive-OR operation between bits of data read out from said first memory cell array by means of said first readout control means and corresponding bits of data stored in said register means, to derive exclusive-0R data, and said second logical operation means includes OR means for effecting the logical operation between bits of data read out from said second memory cell array by means of said second readout control means and corresponding bits of data output from said exclusive-0R means, to derive logical sum data.

Claim 14

A memory device having an operating function according to claim 11, wherein said exclusive-OR means includes n exclusive-OR circuits which are connected to receive respective bits of data read out from said first memory cell array at one input terminal and respective bits of data stored in said register means at the other input terminal, and said OR means includes n OR circuits connected to receive respective bits of data read out from said second memory cell array at one input terminal and corresponding bits of data output from said n exclusive-OR circuits at the other input terminal.

Claim 15

A memory device having an operating function according to claim 10, wherein said first readout control means and first write-in control means include a first row decoder, a first write-in/sense amplifier circuit, and a column decoder.

Claim 16

A memory device having an operating function according to claim 10, wherein said second readout control means includes a second row decoder and a second write-in/sense amplifier circuit.