FET bridge protection circuit

Claim 2

A protection circuit with an FET bridge comprising: a complementary pair of FETs, one N-channel and one P-channel, each FET having a drain, a gate, and a source, each FET also having an on state and an off state, the FET bridge connected across a power supply with a positive and a negative terminal, the P-channel FET having the source connected to the positive terminal of the power supply, the N-channel FET having the source connected to the negative terminal of the power supply, the drain of the two FET's connected together and providing an output signal for driving a power transistor; and two transistors, one PNP and one NPN, each having a base, an emitter, and a collector, the emitters of the transistors connected together through a resistor, the transistors also connected in such a way that when one transistor is biased conductive, the other transistor is biased nonconductive, the transistors further connected in a way such that when the PNP transistor is biased conductive, the N-channel FET turns off, the gate discharging directly through the collector-emitter circuit of the PNP transistor, and the P-channel FET turns on, the gate charging through the PNP transistor and the resistor, at a slower rate than the N-channel FET is discharging, the transistors further connected in a way such that when the NPN transistor is biased conductive, the P-channel FET turns off, the base discharging directly through the collector-emitter circuit of the NPN transistor, and the N-channel FET turns on, the gate charging, at a slower rate than the P-channel FET is discharging, through the NPN transistor and the resistor.

Claim 3

A protection circuit with a bridge circuit comprising: a pair of switching devices, each having an on state, an off state, a turn-on time, and a turn-off time, comprising the bridge circuit and connected across a power source with high and low voltage terminals, one switching device coupled to the high voltage terminal, the other switching device coupled to the low voltage terminal, the two switching devices also connected together and providing an output signal at such connection; two transistors, each with a collector-emitter circuit, for controlling the on/off states of the switching devices, the transistors connected such that when one transistor is biased conductive, the other transistor is biased nonconductive, the transistors also connected such that when one transistor is biased conductive, one switching device turns off, discharging directly through the collector-emitter circuit of the biased-conductive transistor, the transistors further connected such that when the other transistor is biased conductive, the other switching device turns off, discharging directly through the collector-emitter circuit of the biased-conductive transistor; and a single resistor, coupled to both of the switching devices, comprising part of a circuit path to both switching devices through which each switching device is turned on while the other is turned off, each switching device having a discharge path not including the resistor, the resistor lengthening the turn-on time of the switching device being turned on to a time of greater duration than the turn-off time of the switching device being turned off, thereby preventing both switching devices from being turned on at the same time.

Claim 4

A protection circuit with a bridge circuit comprising: a pair of switching devices, each having an on state, an off state, a turn-on time, and a turn-off time, comprising the bridge circuit and connected across a power source with high and low voltage terminals, one switching device coupled to the high voltage terminal, the other switching device coupled to the low voltage terminal, the two switching devices also connected together and providing an output signal at such connection; two transistors, each with a collector-emitter circuit, for controlling the on/off states of the switching devices, the transistors connected such that when one transistor is biased conductive, the other transistor is biased nonconductive, the transistors also connected such that when one transistor is biased conductive, one switching device turns off, discharging directly through the collector-emitter circuit of the biased-conductive transistor, the transistors further connected such that when the other transistor is biased conductive, the other switching device turns off, discharging directly through the collector-emitter circuit of the biased-conductive transistor; and a single resistor, coupled to both of the switching devices, comprising part of a circuit path to both switching devices through which each switching device is turned on while the other is turned off, each switching device having a discharge path not including the resistor, the resistor lengthening the turn-on time of the switching device being turned on to a time of greater duration than the turn-off time of the switching device being turned off, thereby preventing both switching devices from being turned on at the same time.