US4969032A
Expired / Lapsed
US
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Monolithic microwave integrated circuit having vertically stacked components
Assignee: NXP USA Inc
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Filing: 1988-07-18
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Granted: 1990-11-06
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Expires: 2008-07-18
Abstract
Abstract A monolithic microwave integrated circuit having multiple, vetically stacked components wherein at least three metal layers isolated from each other by layers of non-conducting material are formed on a semi-insulating substrate, generally comprised of gallium arsenide. Vertically stacked capacitors, inductors and various combinations thereof may be fabricated using the present invention. Further, the vetrically stacked components may be formed on active devices such as FETs and diodies.
Inventors
- 👤 Douglas G. Scheitlin
- 👤 Charles E. Weitzel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:30
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D1/00; H10D1/60; H10D1/68; H10D30/00; H10D30/80; H10D30/83; H10D84/02; H10D84/05; H10D86/00; H10D86/01; H10D88/00; Y; Y10; Y10S; Y10S505/00; Y10S505/825; Y10S505/856
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
81 words
A III-V compound monolithic microwave integrated circuit having multiple, vertically stacked components comprising: a semi-insulating substrate; a first metal layer disposed on said semi-insulating substrate; a first layer of non-conducting material disposed on said first metal layer; and at least two additional metal layers disposed on said first layer of non-conducting material, said additional metal layers being isolated from each other by additional layers of non-conducting material disposed therebetween, said metal layers and said layers of non-conducting material forming passive devices.
Claim 2
Dependent Claim
81 words
A III-V compound monolithic microwave integrated circuit having multiple, vertically stacked components comprising: a semi-insulating substrate; a first metal layer disposed on said semi-insulating substrate; a first layer of non-conducting material disposed on said first metal layer; and at least two additional metal layers disposed on said first layer of non-conducting material, said additional metal layers being isolated from each other by additional layers of non-conducting material disposed therebetween, said metal layers and said layers of non-conducting material forming passive devices.
Claim 3
Dependent Claim
22 words
The monolithic microwave integrated circuit of claim 1 wherein the passive devices are of the group consisting of capacitors, inductors and transfomers.
Claim 4
Dependent Claim
15 words
The monolithic microwave integrated circuit of claim 1 wherein the semi-insulating substrate comprises gallium arsenide.
Claim 5
Dependent Claim
16 words
The monolithic microwave integrated circuit of claim 1 wherein the semi-insulating substitute comprises an alumina compound.
Claim 6
Dependent Claim
17 words
The monolithic microwave integrated circuit of claim 1 wherein the first metal layer comprises titanium and gold.
Claim 7
Dependent Claim
16 words
The monolithic microwave integrated circuit of claim 5 wherein the first metal layer further comprises platinum.
Claim 8
Dependent Claim
17 words
The monolithic microwave integrated circuit of claim 1 wherein the metal layers are comprised of superconducting materials.
Claim 9
Dependent Claim
19 words
The monolithic microwave integrated circuit of claim 1 wherein the non-conducting layers comprise oxide, nitride, polyimide or combinations thereof.
Claim 10
Dependent Claim
15 words
The monolithic microwave integrated circuit of claim 1 wherein the non-conducting layers comprise magnetic materials.
Claim 11
Dependent Claim
24 words
The monolithic microwave integrated circuit of claim 1 wherein the vertically stacked passive devices are disposed on active electrical devices including FETs and diodes.
Claim 12
Dependent Claim
89 words
A monolithic microwave integrated circuit having multiple, vertically stacked components comprising: a semi-insulating gallium arsenide substrate; a first metal layer comprising titanium and gold, said first metal layer disposed on said semi-insulating substrate; a first layer of non-conducting material disposed on said first metal layer; and at least two additional metal layers disposed on said first layer of non-conducting material, said additional metal layers being isolated from each other by additional layers of non-conducting material disposed therebetween, said metal layers and said layers of non-conducting material forming passive devices.
Claim 13
Dependent Claim
89 words
A monolithic microwave integrated circuit having multiple, vertically stacked components comprising: a semi-insulating gallium arsenide substrate; a first metal layer comprising titanium and gold, said first metal layer disposed on said semi-insulating substrate; a first layer of non-conducting material disposed on said first metal layer; and at least two additional metal layers disposed on said first layer of non-conducting material, said additional metal layers being isolated from each other by additional layers of non-conducting material disposed therebetween, said metal layers and said layers of non-conducting material forming passive devices.
Claim 14
Dependent Claim
22 words
The monolithic microwave integrated circuit of claim 11 wherein the passive devices are of the group consisting of capacitors, inductors and transformers.
Claim 15
Dependent Claim
16 words
The monolithic microwave integrated circuit of claim 11 wherein the first metal layer further comprises platinum.
Claim 16
Dependent Claim
19 words
The monolithic microwave integrated circuit of claim 11 wherein the non-conducting layers comprise oxide, nitride, polyimide or combinations thereof.
Claim 17
Dependent Claim
15 words
The monolithic microwave integrated circuit of claim 11 wherein the non-conducting layers comprise magnetic materials.
Claim 18
Dependent Claim
24 words
The monolithic microwave integrated circuit of claim 11 wherein the vertically stacked passive devices are disposed on active electrical devices including FETs and diodes.
Claim 19
Independent Claim
88 words
A method of fabricating III-V compound monolithic microwave integrated circuit having multiple, vertically stacked components comprising the steps of: providing a semi-insulating substrate; forming a first metal layer on said semi-insulating substrate; forming a first layer of non-conducting material on said first metal layer; forming at least two additional metal layers on said first layer of non-conducting material, said additional metal layers to be isolated from each other by the formation of additional non-conducting layers therebetween, said metal layers and said layers of nonconducting material forming passive devices.
Claim 20
Independent Claim
88 words
A method of fabricating III-V compound monolithic microwave integrated circuit having multiple, vertically stacked components comprising the steps of: providing a semi-insulating substrate; forming a first metal layer on said semi-insulating substrate; forming a first layer of non-conducting material on said first metal layer; forming at least two additional metal layers on said first layer of non-conducting material, said additional metal layers to be isolated from each other by the formation of additional non-conducting layers therebetween, said metal layers and said layers of nonconducting material forming passive devices.
Claim 21
Dependent Claim
19 words
The method of claim 17 wherein the passive devices are of the group consisting of capacitors, inductors and transformers.
Claim 22
Dependent Claim
19 words
The method of claim 17 Wherein the steps of providing a semi-insulating substrate includes providing a gallium arsenide substrate.
Claim 23
Dependent Claim
41 words
The method of claim 19 wherein the step of forming a first metal layer further comprises the steps of: forming a layer of titanium on the semi-insulating, gallium arsenide substrate; and forming a layer of gold on said layer of titanium.
Claim 24
Dependent Claim
33 words
The method of claim 20 wherein the step of forming a first metal layer further comprises the step of forming a platinum layer between the layer of titanium and the layer of gold.
Claim 25
Dependent Claim
16 words
The method of claim 17 wherein the steps of forming the metal layers of superconducting materials.
Claim 26
Dependent Claim
33 words
The method of claim 17 wherein the steps of forming a first layer of non-conducting material and additional layers of non-conducting material include forming said layers of oxide, nitride, polyimide or combinations thereof.
Claim 27
Dependent Claim
37 words
The method of claim 23 wherein the steps of forming a first layer of non-conducting material and additional layers of non-conducting material include forming a layer of polyimide and then forming an oxide or nitride layer thereon.
Claim 28
Dependent Claim
29 words
The method of claim 17 wherein the steps of forming a first layer of non-conducting material and additional layers of non-conducting material include forming said layers of magnetic materials.
Claim 29
Dependent Claim
21 words
The method of claim 17 wherein the monolithic microwave integrated circuit is formed on active electrical devices including FETs and diodes.
References Cited (Backward Citations)
US4745448A
Cited
US4737733A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-11-05 | 1994-05-07 | 1994-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-05 | 1998-05-07 | 1998-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-05 | 2002-05-07 | 2002-11-06 | $7700.00 | Window Closed / Lapsed |