RF and DC desensitized electroexplosive device

Claim 2

An RF and DC desensitized electroexplosive device comprising: a plurality of zener diodes; and a plurality of capacitors; with a resistive heating element whereby said zener diodes and said capacitors form a reactively balanced bridge for cancelling the effects of RF energy induced into the device at the resistive heating element and for blocking DC induced currents below a threshold of said zener diodes from transmitting to the resistive heating element.

Claim 3

An RF and DC desensitized electroexplosive device according to claim 1 wherein said resistive heating element is a patterned layer of nichrome.

Claim 4

An RF and DC desensitized electroexplosive device according to claim 1 wherein said resistive heating element is a resistive heating wire.

Claim 5

An RF and DC desensitized electroexplosive device comprising: a plurality of zener diodes constructed and doped to exhibit a parasitic junction capacitance of between 50 and 500 picofarads; and a plurality of capacitors constructed to exhibit capacitance approximately equal to the parasitic capacitance of said plurality of zener diodes, with a resistive heating element whereby said zener diodes and said capacitors form a reactively balanced bridge for cancelling the effects of RF energy induced into the device at the resistive heating element and for blocking DC induced currents below a threshold of said zener diodes from transmitting to the resistive heating element.

Claim 6

An RF and DC desensitized electroexplosive device comprising: a plurality of zener diodes constructed and doped to exhibit a parasitic junction capacitance of between 50 and 500 picofarads; and a plurality of capacitors constructed to exhibit capacitance approximately equal to the parasitic capacitance of said plurality of zener diodes, with a resistive heating element whereby said zener diodes and said capacitors form a reactively balanced bridge for cancelling the effects of RF energy induced into the device at the resistive heating element and for blocking DC induced currents below a threshold of said zener diodes from transmitting to the resistive heating element.

Claim 7

An RF and DC desensitized electroexplosive device comprising: a plurality of zener diodes constructed by semiconductor techniques and doped to exhibit a parasitic junction capacitance of between 50 and 500 picofarads; and a plurality of capacitors constructed to exhibit capacitance approximately equal to the parasitic capacitance of said plurality of zener diodes; and a resistive heating element whereby said plurality of zener diodes and said plurality of capacitors form a reactively balanced bridge for cancelling the effects of RF energy induced into the device at the resistive element and for blocking DC induced currents below a threshold of said zener diodes from transmitting to said resistive element.

Claim 8

An RF and DC desensitized electroexplosive device comprising: a plurality of zener diodes constructed by semiconductor techniques and doped to exhibit a parasitic junction capacitance of between 50 and 500 picofarads; and a plurality of capacitors constructed to exhibit capacitance approximately equal to the parasitic capacitance of said plurality of zener diodes; and a resistive heating element whereby said plurality of zener diodes and said plurality of capacitors form a reactively balanced bridge for cancelling the effects of RF energy induced into the device at the resistive element and for blocking DC induced currents below a threshold of said zener diodes from transmitting to said resistive element.

Claim 9

An RF and DC desensitized electroexplosive device according to claim 5 wherein said resistive heating element is an ohmic bridgewire.

Claim 10

An RF and DC desensitized electroexplosive device according to claim 5 wherein said resistive heating element is formed of a thin film strip of nichrome.

Claim 11

An RF and DC electroexplosive device according to claim 5 further defined by: at least one capacitor in parallel with the reactively balanced bridge formed by said plurality of capacitors and said plurality of zenor diodes; and at least 1 inductor in series with the parallel circuit formed by said at least one capacitor.

Claim 12

An electroexplosive device according to claim 8 wherein said at least 1 capacitor is of ceramic form.

Claim 13

An electroexplosive device according to claim 5 further defined by a thin film ohmic coating formed over the device to provide an ohmic contact for connecting the device into an electrical circuit.

Claim 14

An electroexplosive device according to claim 10 wherein said ohmic coating is one metal chosen from a group consisting of nichrome, copper and gold.

Claim 15

A RF and DC desensitized electroexplosive device according to claim 5 further defined by: a capacitor in parallel with said reactively balanced bridge; and at least one inductor in series with the parallel circuit formed by said reactively balanced bridge and said capacitor.

Claim 16

An electroexplosive device according to claim 12 fabricated in monolithic form by microelectronic techniques.

Claim 17

An electroexplosive device according to claim 12 wherein said capacitor is of ceramic form.

Claim 18

An electroexplosive device according to claim 12 further defined by: a metal coating formed over the device and patterned to form ohmic contacts for connecting the device into an electrical circuit.

Claim 19

An electroexplosive device according to claim 15 wherein said metal coating is one metal chosen from a group consisting of nichrome, copper, or gold.

Claim 20

An electroexplosive device according to claim 12 wherein said balanced bridge is balanced around an ohmic bridgewire.

Claim 21

An electroexplosive device according to claim 16 wherein said reactively balanced bridge is formed of monolithic construction around a patterned nichrome heating element.