Wafer having a dicing area having a step region covered with a conductive layer and method of manufacturing the same

Claim 2

A wafer comprising: a semiconductor substrate having a main surface; a plurality of chip regions formed on said main surface of said semiconductor substrate; a dicing area formed around the entire periphery of one chip region and between said one chip region and an adjacent chip region so as to isolate said chip regions to form individual chips, the bottom surface of said dicing area being lower than said chip regions, thereby forming step region between said dicing area and each of said chip regions; and first and second conductive films formed on opposite side walls of said step region, said conductive films being spaced apart and electrically isolated from each other access said step region.

Claim 3

A wafer of claim 1, further comprising an insulating film harder than said conductive film for covering said conductive film.

Claim 4

A wafer of claim 1, further comprising stacked films having end portions forming step portions, formed in said dicing area, said conductive film being formed on said end portions of said stacked film.

Claim 5

A wafer of claim 3, further comprising a semiconductor element formed in each of said chip regions, said stacked film serving as a test element for testing said semiconductor element.

Claim 6

A wafer of claim 3, wherein said stacked films comprise an alignment mark for aligning a mask.

Claim 7

A semiconductor device comprising: a semiconductor substrate having a main surface on which an electric circuit element is formed and side surfaces intersecting with said main surface at right angles; and a conductive layer formed on said side surfaces of said semiconductor substrate and partially extending onto said electric circuit element in a direction substantially parallel to said main surface whereby said a conductive layer formed on said side surfaces of said semiconductor substrate and partially extending onto said electric circuit element in a direction substantially parallel to said main surface whereby said electric circuit element is contiguously bordered on all sides by said conductive layer and whereby a central portion of said electric circuit is left exposed.

Claim 8

A semiconductor device comprising: a semiconductor substrate having a main surface on which an electric circuit element is formed and side surfaces intersecting with said main surface at right angles; and a conductive layer formed on said side surfaces of said semiconductor substrate and partially extending onto said electric circuit element in a direction substantially parallel to said main surface whereby said a conductive layer formed on said side surfaces of said semiconductor substrate and partially extending onto said electric circuit element in a direction substantially parallel to said main surface whereby said electric circuit element is contiguously bordered on all sides by said conductive layer and whereby a central portion of said electric circuit is left exposed.

Claim 9

A semiconductor device in accordance with claim 6 further comprising an insulating film covering said conductive layer.

Claim 10

A wafer comprising: a semiconductor substrate having a main surface; a plurality of chip regions formed on said main surface of said semiconductor substrate; a dicing area formed between one chip region and an adjacent chip region so as to isolate said chip regions to form individual chips, the bottom surface of said dicing area being lower than said chip regions, thereby forming a trench between said dicing area and each of said chip regions; and first and second conductive films formed on opposite side walls of said trench, said conductive films being spaced apart and electrically isolated from each other across the bottom surface of said trench, said first and second conductive films formed away from central portions of said chip regions whereby major surfaces of said chip regions are exposed.

Claim 11

A wafer comprising: a semiconductor substrate having a main surface; a plurality of chip regions formed on said main surface of said semiconductor substrate; a dicing area formed between one chip region and an adjacent chip region so as to isolate said chip regions to form individual chips, the bottom surface of said dicing area being lower than said chip regions, thereby forming a trench between said dicing area and each of said chip regions; and first and second conductive films formed on opposite side walls of said trench, said conductive films being spaced apart and electrically isolated from each other across the bottom surface of said trench, said first and second conductive films formed away from central portions of said chip regions whereby major surfaces of said chip regions are exposed.