US4967254A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1988-07-11
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Granted: 1990-10-30
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Expires: 2008-07-11
Abstract
Abstract A semiconductor device includes a collector layer comprising a first conductivity type semiconductor layer, a base layer comprising a second conductivity type semiconductor layer produced on the collector layer, an emitter layer comprising a first conductivity type semiconductor layer produced on the base layer, a contact layer comprising an undoped semiconductor layer produced on the emitter layer, second conductivity type first implantation regions produced at regions each consisting of the contact layer, the emitter layer, and the base layer, so as to leave a central region therebetween, base electrodes produced on the first implantation regions, a first conductivity type second implantation region produced by implanting impurities from the surface of the contact layer extending into the emitter layer, in a region between the first implantation regions, and an emitter electrode produced on the second implantation region. Or, a semiconductor device includes an emitter layer comprising undoped semiconductor layer and a first conductivity type second implantation region produced by implanting impurities from the surface of the undoped semiconductor layer extending into the base layer, at a region between the first implantation regions.
Inventors
- 👤 Teruyuki Shimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:11
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/133; Y; Y10; Y10S; Y10S148/00; Y10S148/111
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
148 words
A semiconductor device comprising: a collector layer comprising a first conductivity type semiconductor layer; a base layer comprising a second conductivity type semiconductor layer disposed on said collector layer; an emitter layer comprising a first conductivity type semiconductor layer disposed on said base layer; an undoped semiconductor contact layer disposed on said emitter layer; two spaced apart second conductivity type semiconductor first contact regions having a central region therebetween, each first contact region being disposed adjacent and contacting said undoped contact layer, said emitter layer, and said base layer, and spaced from said collector layer; base electrodes respectively disposed in contact with each of said first regions; a first conductivity type semiconductor second region disposed in the central region spaced from said first contact regions and adjacent and contacting said undoped contact layer and said emitter layer; and an emitter electrode disposed in contact with said second region.
Claim 2
Dependent Claim
148 words
A semiconductor device comprising: a collector layer comprising a first conductivity type semiconductor layer; a base layer comprising a second conductivity type semiconductor layer disposed on said collector layer; an emitter layer comprising a first conductivity type semiconductor layer disposed on said base layer; an undoped semiconductor contact layer disposed on said emitter layer; two spaced apart second conductivity type semiconductor first contact regions having a central region therebetween, each first contact region being disposed adjacent and contacting said undoped contact layer, said emitter layer, and said base layer, and spaced from said collector layer; base electrodes respectively disposed in contact with each of said first regions; a first conductivity type semiconductor second region disposed in the central region spaced from said first contact regions and adjacent and contacting said undoped contact layer and said emitter layer; and an emitter electrode disposed in contact with said second region.
Claim 3
Dependent Claim
19 words
The device of claim 1 wherein said collector and base layers and GaAs and said emitter layer is AlGaAs.
Claim 4
Dependent Claim
23 words
The device of claim 1 wherein said collector and base layers are InP and said emitter layer contains indium, phosphorus, gallium, and aluminum.
Claim 5
Dependent Claim
146 words
A semiconductor device comprising: a collector layer comprising a first conductivity type semiconductor layer; a base layer comprising a second conductivity type semiconductor layer disposed on said collector layer; an emitter layer comprising an undoped semiconductor layer disposed on said base layer; an undoped semiconductor contact layer disposed on said emitter layer; two spaced apart second conductivity type semiconductor first contact regions having a central region therebetween, each first contact region being disposed adjacent and contacting said undoped contact layer, said emitter layer, and said base layer, and spaced from said collector layer; base electrodes respectively disposed in contact with each of said first regions; a first conductivity type semiconductor second region disposed in the central region spaced from said first contact regions and adjacent and contacting said undoped contact layer and said emitter layer; and an emitter electrode disposed in contact with said second region.
Claim 6
Dependent Claim
146 words
A semiconductor device comprising: a collector layer comprising a first conductivity type semiconductor layer; a base layer comprising a second conductivity type semiconductor layer disposed on said collector layer; an emitter layer comprising an undoped semiconductor layer disposed on said base layer; an undoped semiconductor contact layer disposed on said emitter layer; two spaced apart second conductivity type semiconductor first contact regions having a central region therebetween, each first contact region being disposed adjacent and contacting said undoped contact layer, said emitter layer, and said base layer, and spaced from said collector layer; base electrodes respectively disposed in contact with each of said first regions; a first conductivity type semiconductor second region disposed in the central region spaced from said first contact regions and adjacent and contacting said undoped contact layer and said emitter layer; and an emitter electrode disposed in contact with said second region.
Claim 7
Dependent Claim
19 words
The device of claim 4 wherein said collector and base layers are GaAs and said emitter layer is AlGaAs.
Claim 8
Dependent Claim
23 words
The device of claim 4 wherein said collector and base layers are InP and said emitter layer contains indium, phosphorus, gallium, and aluminum.
Claim 9
Dependent Claim
147 words
A semiconductor device comprising: a collector layer comprising a first conductivity type semiconductor layer; a base layer comprising a second conductivity type semiconductor layer disposed on said collector layer; an emitter layer comprising a first conductivity type semiconductor layer disposed on said base layer; an undoped semiconductor contact layer disposed on said emitter layer; an annular second conductivity type semiconductor first contact region surrounding a central region, said annular first contact region being disposed adjacent and contacting said undoped contact layer, said emitter layer, and said base layer, and spaced from said collector layer; at least one base electrode disposed in contact with said first region; a first conductivity type semiconductor second region disposed in the central region spaced from said first contact region and adjacent and contacting said undoped contact layer and said emitter layer; and an emitter electrode disposed in contact with said second region.
Claim 10
Dependent Claim
147 words
A semiconductor device comprising: a collector layer comprising a first conductivity type semiconductor layer; a base layer comprising a second conductivity type semiconductor layer disposed on said collector layer; an emitter layer comprising a first conductivity type semiconductor layer disposed on said base layer; an undoped semiconductor contact layer disposed on said emitter layer; an annular second conductivity type semiconductor first contact region surrounding a central region, said annular first contact region being disposed adjacent and contacting said undoped contact layer, said emitter layer, and said base layer, and spaced from said collector layer; at least one base electrode disposed in contact with said first region; a first conductivity type semiconductor second region disposed in the central region spaced from said first contact region and adjacent and contacting said undoped contact layer and said emitter layer; and an emitter electrode disposed in contact with said second region.
Claim 11
Dependent Claim
19 words
The device of claim 7 wherein said collector and base layers are GaAs and said emitter layer is AlGaAs.
Claim 12
Dependent Claim
23 words
The device of claim 7 wherein said collector and base layers are InP and said emitter layer contains indium, phosphorus, gallium, and aluminum.
Claim 13
Dependent Claim
145 words
A semiconductor device comprising: a collector layer comprising a first conductivity type semiconductor layer; a base layer comprising a second conductivity type semiconductor layer disposed on said collector layer; an emitter layer comprising an undoped semiconductor layer disposed on said base layer; an undoped semiconductor contact layer disposed on said emitter layer; an annular second conductivity type semiconductor first contact region having a central region, said annular first contact region being disposed adjacent and contacting said contact layer, said emitter layer, and said base layer, and spaced from said collector layer; at least one base electrode disposed in contact with said first contact region; a first conductivity type semiconductor second region disposed in the central region spaced from said first contact region and adjacent and contacting said undoped contact layer and said emitter layer; and an emitter electrode disposed in contact with said second region.
Claim 14
Dependent Claim
145 words
A semiconductor device comprising: a collector layer comprising a first conductivity type semiconductor layer; a base layer comprising a second conductivity type semiconductor layer disposed on said collector layer; an emitter layer comprising an undoped semiconductor layer disposed on said base layer; an undoped semiconductor contact layer disposed on said emitter layer; an annular second conductivity type semiconductor first contact region having a central region, said annular first contact region being disposed adjacent and contacting said contact layer, said emitter layer, and said base layer, and spaced from said collector layer; at least one base electrode disposed in contact with said first contact region; a first conductivity type semiconductor second region disposed in the central region spaced from said first contact region and adjacent and contacting said undoped contact layer and said emitter layer; and an emitter electrode disposed in contact with said second region.
Claim 15
Dependent Claim
19 words
The device of claim 10 wherein said collector and base layers are GaAs and said emitter layer is AlGaAs.
Claim 16
Dependent Claim
23 words
The device of claim 10 wherein said collector and base layers are InP and said emitter layer contains indium, phosphorus, gallium, and aluminum.
References Cited (Backward Citations)
US4315271A
Cited
US4750025A
Cited
US4617724A
Cited
US4573256A
Cited
JPS6114755A
Cited
JPS6197966A
Cited
JPS61102744A
Cited
US4758870A
Cited
JPS61137364A
Cited
US4679305A
Cited
JPS6220373A
Cited
JPS6353971A
Cited
JPS63177464A
Cited
EP0300803A2
Cited
US4825265A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-29 | 1994-04-30 | 1994-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-29 | 1998-04-30 | 1998-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-29 | 2002-04-30 | 2002-10-30 | $7700.00 | Window Closed / Lapsed |