Infrared image detector utilizing Schottky barrier junctions

Claim 2

An infrared image detector comprising: (a) an infrared light transparent substrate; (b) a plurality of optically responsive materials deposited in a non-contiguous plane on one side of said substrate; and (c) at least one contiguous metal semiconductor contact deposited on said one side of said substrate and on a portion of said plurality of optically responsive materials wherein an infrared detector element is formed wherever said metal contact crosses one of said plurality of optically responsive materials and wherein said metal contact is a single ohmic connection point for each of said formed detector elements and each of said plurality of optically responsive materials crossed by said contiguous metal contact is a non-ohmic, Schottky barrier connection point.

Claim 3

An infrared image detector as in claim 1 wherein said plurality of optically responsive materials comprise semiconductor materials optically responsive to infrared radiation.

Claim 4

An infrared image detector as in claim 2, each of said semiconductor materials comprising a material having a distinct chemical composition wherein said formed detector elements respond to wave bands of infrared radiation based upon said chemical composition.

Claim 5

An infrared image detector as in claim 2 wherein said semiconductor materials are selected from the group of consisting of lead chalcogenides, alloys of lead chalcogenides with tin chalcogenides, and alloys of lead chalcogenides with cadmium chalcogenides.

Claim 6

An infrared image detector as in claim 1 wherein said plurality of optically responsive materials comprises parallel strips of optically responsive materials.

Claim 7

An infrared image detector as in claim 5 wherein each of said strips comprise a single layer optically responsive material.

Claim 8

An infrared image detector as in claim 5 wherein at least one of said strips comprises multi-layers of optically responsive material.

Claim 9

An infrared image detector as in claim 5 wherein said contiguous metal contact is perpendicular to said parallel strips.

Claim 10

An infrared image detector as in claim 5 wherein said contiguous metal contact is at an acute angle to said parallel strips.

Claim 11

An infrared image detector as in claim 1 wherein said substrate comprises an infrared transparent single crystal material selected from the group consisting of alkalihalides and alkaline earth halides.

Claim 12

An infrared image detector as in claim 1 wherein said contiguous metal contact is lead.

Claim 13

An infrared image detector comprising: (a) an infrared light transparent substrate; (b) a plurality of non-contiguous strips of semiconductor materials deposited on one side of said substrate wherein said strips are optically responsive to infrared radiation; (c) at least one contiguous metal semiconductor contact deposited on said one side of said substrate and on a portion of at least one of said strips wherein an infrared detector element is formed wherever said metal contact crosses one of said strips and wherein said metal contact is a single ohmic connection point for each of said formed detector elements and each of said strips crossed by said metal contact is a non-ohmic, Schottky barrier connection point.

Claim 14

An infrared image detector comprising: (a) an infrared light transparent substrate; (b) a plurality of non-contiguous strips of semiconductor materials deposited on one side of said substrate wherein said strips are optically responsive to infrared radiation; (c) at least one contiguous metal semiconductor contact deposited on said one side of said substrate and on a portion of at least one of said strips wherein an infrared detector element is formed wherever said metal contact crosses one of said strips and wherein said metal contact is a single ohmic connection point for each of said formed detector elements and each of said strips crossed by said metal contact is a non-ohmic, Schottky barrier connection point.

Claim 15

An infrared image detector as in claim 12 wherein said non-contiguous strips are parallel.

Claim 16

A multicolored infrared image detector comprising: (a) an infrared light transparent substrate; (b) a plurality of optically responsive materials of differing composition deposited in a non-contiguous plane on one side of said substrate whereby the detector is responsive to distinct wavelengths correlated with each of said plurality of optically responsive materials deposited on said substrate; and (c) at least one contiguous metal semiconductor contact deposited on said substrate and on a portion of said plurality of optically responsive materials wherein an infrared detector element is formed wherever said metal contact crosses one of said plurality of optically responsive materials and wherein said metal contact is a single ohmic connection point for each of said formed detector elements and each of said plurality of optically responsive materials crossed by said contiguous metal contact is a non-ohmic, Schottky barrier connection point.

Claim 17

A multicolored infrared image detector comprising: (a) an infrared light transparent substrate; (b) a plurality of optically responsive materials of differing composition deposited in a non-contiguous plane on one side of said substrate whereby the detector is responsive to distinct wavelengths correlated with each of said plurality of optically responsive materials deposited on said substrate; and (c) at least one contiguous metal semiconductor contact deposited on said substrate and on a portion of said plurality of optically responsive materials wherein an infrared detector element is formed wherever said metal contact crosses one of said plurality of optically responsive materials and wherein said metal contact is a single ohmic connection point for each of said formed detector elements and each of said plurality of optically responsive materials crossed by said contiguous metal contact is a non-ohmic, Schottky barrier connection point.