US4962086A
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High Tc superconductor - gallate crystal structures
Assignee: International Business Machines Corp
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Filing: 1988-06-08
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Granted: 1990-10-09
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Expires: 2008-06-08
Abstract
Abstract High T c oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high T c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.
Inventors
- 👤 William J. Gallagher
- 👤 Edward A. Giess
- 👤 Aranava Gupta
- 👤 Robert B. Laibowitz
- 👤 Eugene J. O'Sullivan
- 👤 Robert L. Sandstrom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:14
CPC Classifications
H; H01; H01P; H01P3/00; H01P3/02; H01P3/08; H01P3/085; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0604; H10N60/0661; H10N60/0716; H10N60/20; H10N60/203; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/704; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49014
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
81 words
A superconductive combination, including: a crystalline gallate layer, including a rare earth element or another element selected from the group consisting of Y, La, Bi, and Sc, or combinations of a rare earth element and at least one of said another elements. a superconductive layer thereon, said superconductive layer having a transistion temperature in excess of 77° K. and being an oxide material having Cu-O planes whose Cu and O atoms align with Ga and O atoms in said gallate layer.
Claim 2
Dependent Claim
81 words
A superconductive combination, including: a crystalline gallate layer, including a rare earth element or another element selected from the group consisting of Y, La, Bi, and Sc, or combinations of a rare earth element and at least one of said another elements. a superconductive layer thereon, said superconductive layer having a transistion temperature in excess of 77° K. and being an oxide material having Cu-O planes whose Cu and O atoms align with Ga and O atoms in said gallate layer.
Claim 3
Dependent Claim
29 words
The combination of claim 1, where said superconductive layer includes a rare earth element or an element selected from the group consisting of Y, La, Bi, Tl and Sc.
Claim 4
Dependent Claim
14 words
The combination of claim 1, where said superconductive layer includes an alkaline earth element.
Claim 5
Dependent Claim
11 words
The combination of claim 1, where said superconductive layer includes Bi.
Claim 6
Dependent Claim
11 words
The combination of claim 1, where said superconductive layer includes Tl.
Claim 7
Dependent Claim
14 words
The combination of claim 1, where said superconductive layer has a 1-2-3 superconducting phase.
Claim 8
Dependent Claim
25 words
The combination of claim 1, where said superconductive layer has an orthorhombic structure with its a and b axes in the plane of said layer.
Claim 9
Dependent Claim
16 words
The combination of claim 1, where said superconductive layer and said gallate layer have similar structures.
Claim 10
Dependent Claim
51 words
A superconductor-substrate combination comprising: a crystalline gallate substrate including a rare earth or another element selected from the group consisting of Y, La, Bi and Sc, and a superconductor layer in contact with said substrate, said superconductor layer being a high T copper oxide composition having lattice matching with said substrate.
Claim 11
Dependent Claim
51 words
A superconductor-substrate combination comprising: a crystalline gallate substrate including a rare earth or another element selected from the group consisting of Y, La, Bi and Sc, and a superconductor layer in contact with said substrate, said superconductor layer being a high T copper oxide composition having lattice matching with said substrate.
Claim 12
Dependent Claim
15 words
The combination of claim 9, where said superconductor layer and said substrate have similar structures.
Claim 13
Dependent Claim
14 words
The combination of claim 9, where said superconductor layer and said substrate exhibit orthorhombicity.
Claim 14
Dependent Claim
15 words
The combination of claim 9, where said superconductor layer and said substrate are single crystals.
Claim 15
Dependent Claim
25 words
The combination of claim 9, where the arrangement of atoms on the surface of said substrate contacting said superconductor layer approximates a (100) cubic perovskite.
Claim 16
Dependent Claim
26 words
The combination of claim 9, where the unit cell of said superconductor layer is rotated approximately 45° with respect to the unit cell of said substrate.
Claim 17
Dependent Claim
83 words
A superconductive electrical device, including: a gallate layer including at least one rare earth element or another element selected from the group consisting of Y, La, Bi and Sc, a superconductor layer in contact with said gallate layer, said superconductor layer being comprised of an oxide material having a transition temperature in excess of 30° K., said superconductor layer being capable of carrying an electrical supercurrent, and an electrical source connected to said superconductor layer for providing electrical supercurrents in said superconductor layer.
Claim 18
Dependent Claim
83 words
A superconductive electrical device, including: a gallate layer including at least one rare earth element or another element selected from the group consisting of Y, La, Bi and Sc, a superconductor layer in contact with said gallate layer, said superconductor layer being comprised of an oxide material having a transition temperature in excess of 30° K., said superconductor layer being capable of carrying an electrical supercurrent, and an electrical source connected to said superconductor layer for providing electrical supercurrents in said superconductor layer.
Claim 19
Dependent Claim
14 words
The device of claim 15, where said gallate layer is a rare earth gallate.
Claim 20
Dependent Claim
29 words
The device of claim 16, further including a superconducting ground plane electrically isolated from said superconductor layer, said ground plane being comprises of a high T c oxide superconductor.
Claim 21
Dependent Claim
42 words
A superconductor structure, comprising: a rare earth gallate substrate, and an oriented layer of high T c superconductor on said substrate, said superconductor being comprised of Cu-O planes where the Cu-Cu spacing in said superconductor approximates the Ga-Ga spacing in said substrate.
Claim 22
Dependent Claim
42 words
A superconductor structure, comprising: a rare earth gallate substrate, and an oriented layer of high T c superconductor on said substrate, said superconductor being comprised of Cu-O planes where the Cu-Cu spacing in said superconductor approximates the Ga-Ga spacing in said substrate.
Claim 23
Dependent Claim
13 words
The structure of claim 18, where said substrate has an orthorhombic crystal structure.
Claim 24
Dependent Claim
12 words
The structure of claim 18, where said substrate has a perovskite structure.
Claim 25
Dependent Claim
65 words
A superconductor-gallate combination, including: a gallate layer containing a rare earth element or another element selected from the group consisting of Y, La, Bi and Sc, a high T c superconductive oxide layer in contact with said gallate layer, said superconductive layer having atomic spacings which match the atomic spacings of said gallate layer at the interface of said gallate layer and said superconductive layer.
Claim 26
Dependent Claim
65 words
A superconductor-gallate combination, including: a gallate layer containing a rare earth element or another element selected from the group consisting of Y, La, Bi and Sc, a high T c superconductive oxide layer in contact with said gallate layer, said superconductive layer having atomic spacings which match the atomic spacings of said gallate layer at the interface of said gallate layer and said superconductive layer.
Claim 27
Dependent Claim
17 words
The combination of claim 21, where said superconductive layer is a copper oxide high T c material.
Claim 28
Dependent Claim
15 words
The combination of claim 21, where said superconductive layer is epitaxial with said gallate layer.
Claim 29
Dependent Claim
24 words
The combination of claim 21, further including a second high T c oxide superconductive layer, said gallate layer being located between said superconductive layers.
Claim 30
Dependent Claim
16 words
The combination of claim 24, where said gallate layer is sufficiently thin to have tunneling therethrough.
Claim 31
Dependent Claim
15 words
The combination of claim 25, where said high T c oxide superconductive layers contain copper.
Claim 32
Dependent Claim
17 words
The combination of claim 26, where said superconductive layers are oriented with respect to said gallate layer.
Claim 33
Dependent Claim
55 words
A superconductive structure comprising: a gallate layer including at least one rare earth element or another element selected from the group consisting of Y, La, Bi and Sc, a superconductive layer in contact with said gallate layer, said superconductive layer being comprised of an oxide material having a transition temperature in excess of 30° K.
Claim 34
Dependent Claim
55 words
A superconductive structure comprising: a gallate layer including at least one rare earth element or another element selected from the group consisting of Y, La, Bi and Sc, a superconductive layer in contact with said gallate layer, said superconductive layer being comprised of an oxide material having a transition temperature in excess of 30° K.
Claim 35
Dependent Claim
13 words
The structure of claim 28, where said superconductive layer is a copper oxide.
References Cited (Backward Citations)
JPH071924A
Cited
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