US4956070A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sputtering apparatus
Assignee: Fujifilm Holdings Corp
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Filing: 1989-04-14
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Granted: 1990-09-11
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Expires: 2009-04-14
Abstract
Abstract A plural-cathode sputtering apparatus capable of producing mixed thin films having a period of stratification as small as 10 Å without putting an undue load on the power supplies. Two different types of targets are provided on a cathode side, and a substrate onto which sputtering is performed is provided on the anode side. Magnetic field generators produce magnetic fields substantially perpendicularly intersecting the electric fields generated between the plate and the targets near and front sides of the targets. The magnetic field generators are each composed of main magnets and electromagnets, which may be combined with the main magnets. Electrical currents are produced for exciting the electromagnets which are controlled in such a manner as to change the magnetic intensity of the magnetic fields and to thereby regulate the sputtering discharge.
Inventors
- 👤 Junji Nakada
- 👤 Hideaki Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:19
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23C14/352; H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3402; H01J37/3405
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
114 words
A sputtering apparatus comprising: at least two different kinds of targets; a substrate, onto which sputtering is performed, disposed in opposition to said targets; magnetic field generating means for producing magnetic fields substantially perpendicularly intersecting electric fields generated between said substrate and said targets near front sides of said targets, said magnetic field generating means comprising main magnets for generating said magnetic fields, and respective auxiliary electromagnets provided near said main magnets or combined therewith; and means for supplying electrical currents for exciting said electromagnets and controlling said electrical currents to change the intensity of said magnetic fields to regulate a sputtering discharge, said electrical currents having a sinusoidal waveform with a DC offset.
Claim 2
Dependent Claim
114 words
A sputtering apparatus comprising: at least two different kinds of targets; a substrate, onto which sputtering is performed, disposed in opposition to said targets; magnetic field generating means for producing magnetic fields substantially perpendicularly intersecting electric fields generated between said substrate and said targets near front sides of said targets, said magnetic field generating means comprising main magnets for generating said magnetic fields, and respective auxiliary electromagnets provided near said main magnets or combined therewith; and means for supplying electrical currents for exciting said electromagnets and controlling said electrical currents to change the intensity of said magnetic fields to regulate a sputtering discharge, said electrical currents having a sinusoidal waveform with a DC offset.
Claim 3
Dependent Claim
40 words
The sputtering apparatus of claim 1, wherein the magnetic flux density in a horizontal plane extending at a distance 1 mm up from the front side of each of said targets is in the range of 80 to 800 gauss.
Claim 4
Dependent Claim
40 words
The sputtering apparatus of claim 1, wherein the magnetic flux density in a horizontal plane extending at a distance 1 mm up from the front side of each of said targets is in the range of 100 to 600 gauss.
Claim 5
Dependent Claim
37 words
The sputtering apparatus of claim 1, wherein said electrical currents are supplied in a direction to generate a magnetic field which reduces the total magnetic field produced by the combination of said electromagnets and said main magnets.
Claim 6
Dependent Claim
51 words
The sputtering apparatus of claim 1, wherein the minimum intensity of the magnetic field produced by each said main magnet and its corresponding electromagnet magnetically saturates the corresponding target and produces a leakage magnetic field whose flux density in a horizontal plane is in the range of 50 to 100 gauss.
References Cited (Backward Citations)
JPS6141767A
Cited
JPS6144176A
Cited
JPS61250166A
Cited
JPS6217175A
Cited
JPS6233764A
Cited
JPS62179115A
Cited
JPS6371878A
Cited
JPS63227779A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-10 | 1994-03-12 | 1994-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-10 | 1998-03-12 | 1998-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-10 | 2002-03-12 | 2002-09-11 | $7700.00 | Window Closed / Lapsed |