US4953943A
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Second harmonic wave generating device
Assignee: Ibiden Co Ltd
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Filing: 1989-12-19
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Granted: 1990-09-04
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Expires: 2009-12-19
Abstract
Abstract A second harmonic wave generating device comprising a LiNbO 3 thin film waveguide layer formed on a LiTaO 3 substrate, in which the fundamental wavelength (λμm), the thickness (T μm) of the LiNbO 3 thin film waveguide layer, the ordinary refractive index (n oS1 ) of the LiTaO 3 substrate at the fundamental wavelength (λμm), the ordinary refractive index (n oF1 ) of the LiNbO 3 thin film waveguide layer at the fundamental wavelength (λμm), the extraordinary refractive index (n eS2 ) of the LiTaO 3 substrate at a second harmonic wavelength (λμm/2), and the extraordinary refractive indes (n e F 2) of the LiNbO 3 thin film waveguide layer at the second harmonic wavelength (λμm/2) are individually within the following specific ranges: λ=0.68 to 0.94 μm T=0.3 to 16 μm n oF1 =2.22 to 2.38 n oS1 =2.10 to 2.25 n eF2 =2.24 to 2.43 n eS2 =2.22 to 2.38
Inventors
- 👤 Yasumitsu Miyazaki
- 👤 Ryo Enomoto
- 👤 Masaya Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:47
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/35; G02F1/37; G02F1/377
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
156 words
A second harmonic wave generating device comprising a LiNbO 3 thin film waveguide layer formed on a LiTaO 3 substrate, characterized in that a fundamental wavelength (λ μm), a thickness (T μm) of said LiNbO 3 thin film waveguide layer, an ordinary refractive index (n oS1 ) of said LiTaO 3 substrate at said fundamental wavelength (λ μm), an ordinary refractive index (n oF1 ) of said LiNbO 3 thin film waveguide layer at said fundamental wavelength (λ μm), an extraordinary refractive index (n eS2 ) of said LiTaO 3 substrate at a second harmonic wavelength (λ μm/2), and an extraordinary refractive index (n eF2 ) of said LiNbO 3 thin film waveguide layer at said second harmonic wavelength (λ μm/2) are individually within the following specific values: λ=0.68 to 0.94 μm T=0.3 to 16 μm n oF1 =2.22 to 2.38 n oS1 =2.10 to 2.25 n eF2 =2.24 to 2.42 n eS2 =2.22 to 2.38
Claim 2
Dependent Claim
156 words
A second harmonic wave generating device comprising a LiNbO 3 thin film waveguide layer formed on a LiTaO 3 substrate, characterized in that a fundamental wavelength (λ μm), a thickness (T μm) of said LiNbO 3 thin film waveguide layer, an ordinary refractive index (n oS1 ) of said LiTaO 3 substrate at said fundamental wavelength (λ μm), an ordinary refractive index (n oF1 ) of said LiNbO 3 thin film waveguide layer at said fundamental wavelength (λ μm), an extraordinary refractive index (n eS2 ) of said LiTaO 3 substrate at a second harmonic wavelength (λ μm/2), and an extraordinary refractive index (n eF2 ) of said LiNbO 3 thin film waveguide layer at said second harmonic wavelength (λ μm/2) are individually within the following specific values: λ=0.68 to 0.94 μm T=0.3 to 16 μm n oF1 =2.22 to 2.38 n oS1 =2.10 to 2.25 n eF2 =2.24 to 2.42 n eS2 =2.22 to 2.38
Claim 3
Dependent Claim
93 words
The second harmonic wave generating device as claimed in claim 1 wherein said thickness (T μm) of said LiNbO 3 thin film waveguide layer, said ordinary refractive index (n oF1 ) of said LiNbO 3 thin film waveguide layer at said fundamental wavelength (λ μm), said extraordinary refractive index (n eS2 ) of said LiTaO 3 substrate at said second harmonic wavelength (λ μm/2), and said extraordinary refractive index (n eF2 ) of said LiNbO 3 thin film waveguide layer at said second harmonic wavelength (λ μm/2) are represented by Equation (α) ##EQU13##
Claim 4
Dependent Claim
34 words
The second harmonic wave generating device as claimed in claim 1 wherein incident angle (θ) of said fundamental wave to the optical axis (Z-axis) of said thin film waveguide layer is 0°±15° or 90°±15°.
Claim 5
Dependent Claim
22 words
The second harmonic wave generating device as claimed in claim 1 wherein said fundamental wavelength (λ μm) is 0.78 to 0.86 μm.
Claim 6
Dependent Claim
27 words
The second harmonic wave generating device as claimed in claim 1 wherein said LiNbO 3 thin film waveguide layer has a thickness of 0.5 to 10 μm.
Claim 7
Dependent Claim
21 words
The second harmonic wave generating device as claimed in claim 1 wherein said LiTaO 3 substrate is a single crystal substrate.
Claim 8
Dependent Claim
43 words
The second harmonic wave generating device as claimed in claim 1 wherein said LiNbO 3 thin film waveguide layer and said LiTaO 3 substrate contain one or more different elements selected from the group consisting of Na, Cr, Mg, Nd, Ti, and V.
Claim 9
Dependent Claim
23 words
The second harmonic wave generating device as claimed in claim 1 of a channel type having a width of 1 to 10 μm.
References Cited (Backward Citations)
US4778234A
Cited
US4775206A
Cited
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| 3.5 Years (Year 4) | 1993-09-03 | 1994-03-05 | 1994-09-04 | $2000.00 | Window Closed / Lapsed |
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