US4952028A
Expired / Lapsed
US
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Method for driving an optoelectronic switching device
Assignee: NEC Corp
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Filing: 1989-07-27
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Granted: 1990-08-28
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Expires: 2009-07-27
Abstract
Abstract A method for driving an optoelectronic switching device such as a pnpn semiconductor device comprises applying a predetermined biased voltage to the optoelectronic semiconductor device, and supplying plural light inputs to the optoelectronic semiconductor device to which the predetermined biased voltage is applied. The plural light inputs are supplied to the optoelectronic semiconductor device intermittently with a predetermined period before carriers excited by a first input pulse of the plural light inputs become extinct. As a result, the number of light sources is decreased.
Inventors
- 👤 Yoshiharu Tashiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:27
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/78; H03K17/79; Y; Y10; Y10S; Y10S359/00; Y10S359/90
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
57 words
A method for driving an optoelectronic switching device, comprising: applying a predetermined biased voltage to said optoelectronic switching device; and supplying plural light inputs to said optoelectronic switching device, intermittently with a predetermined period such that carriers excited by a first light input of said plural light inputs do not become extinct before the next pulse starts.
Claim 2
Independent Claim
57 words
A method for driving an optoelectronic switching device, comprising: applying a predetermined biased voltage to said optoelectronic switching device; and supplying plural light inputs to said optoelectronic switching device, intermittently with a predetermined period such that carriers excited by a first light input of said plural light inputs do not become extinct before the next pulse starts.
Claim 3
Dependent Claim
105 words
A method for driving an optoelectronic switching device, according to claim 1, wherein: said optoelectronic switching device is a pnpn semiconductor device which includes an anode layer of p-semiconductor, a cathode layer of n-semiconductor, and n- and p-gate layers sandwiched by said anode layer and said cathode layer; said plural light inputs are first and second light inputs, a total light energy of said first and second light inputs being over a switching light energy for turning said pnpn semiconductor device on, and a light energy of one light input selected from said first and second light inputs being less than said switching light energy.
References Cited (Backward Citations)
US3461297A
Cited
US4650285A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-27 | 1994-02-26 | 1994-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-27 | 1998-02-26 | 1998-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-27 | 2002-02-26 | 2002-08-28 | $7700.00 | Window Closed / Lapsed |