Apparatus for producing semiconductors

Claim 2

Apparatus for producing semiconductors comprising: a vacuum chamber, a vertical shaft rotatably mounted in said vacuum chamber, a disc supported by and rotatable with said vertical shaft, a plurality of reaction zones located adjacent one another and around said vertical shaft, each said reaction zone including a reaction chamber comprised of a base, walls rising from a perimeter of said base and defining the side enclosures of said reaction chamber and a top plate, each of said top plates comprising a part of said disc positioned close to a top portion of said walls and including means for holding at least one substrate in a position facing the interior of each of said reaction chambers and spaced lifting means adapted to slidably receive a pair of rods, means for rotating said vertical shaft and disc to sequentially transfer each of said top plates holding at least one substrate from one to an adjacent one of said reaction zones, said base of at least one of said reaction chambers including a plurality of spaced discrete openings for uniformly feeding reactant gases toward the substrate holding top plate, a plurality of reactant gas exhaust ports provided in each reaction chamber between said base and said top plate, heating means above the top plate of each reaction chamber, an access opening to the interior of said vacuum chamber, and a lift member having two spaced rods adapted for insertion in said spaced lifting means and movable to lift and lower a top plate and to move a top plate through said access opening.

Claim 3

Apparatus for producing semiconductors comprising: a vacuum chamber, a vertical shaft rotatably mounted in said vacuum chamber, a disc supported by and rotatable with said vertical shaft, a plurality of arch-shaped cuts around the periphery of said disc, a plurality of reaction zones located adjacent one another and around said vertical shaft, each said reaction zone including a reaction chamber comprised of a base, walls rising from a perimeter of said base and defining the side enclosures of said reaction chamber and a top plate, each of said top plates having a peripheral part shaped in a form complimentary to one of said archshaped cuts, means for supporting each of said top plates in one of said arch-shaped cuts of said disc close to a top portion of said walls, each of said top plates including means for holding at least one substrate in a position facing the interior of each of said reaction chambers. means for rotating said vertical shaft and disc to sequentially transfer each of said top plates holding at least one substrate from one to an adjacent one of said reaction zones, said base of at least one of said reaction chambers including openings for feeding reactant gases toward the substrate holding top plate, a plurality of reactant gas exhaust ports provided in each reaction chamber between said base and said top plate, heating means above the top plate of each reaction chamber, an access opening to the interior of said vacuum chamber, said access opening being through a sidewall of said vacuum chamber adjacent one of said reaction zones, and valve means for opening and closing said access opening, whereby one of said top plates may be withdrawn from one of said arch-shaped cuts of said disc in said reaction zone and replaced by another top plate when said valve is open to permit access to said reaction zone adjacent said opening.

Claim 4

Apparatus for producing semiconductors comprising: a vacuum chamber, a vertical shaft rotatably mounted in said vacuum chamber, a disc supported by and rotatable with said vertical shaft, a plurality of arch-shaped cuts around the periphery of said disc, a plurality of reaction zones located adjacent one another and around said vertical shaft, each said reaction zone including a reaction chamber comprised of a base, walls rising from a perimeter of said base and defining the side enclosures of said reaction chamber and a top plate, each of said top plates having a peripheral part shaped in a form complimentary to one of said archshaped cuts, means for supporting each of said top plates in one of said arch-shaped cuts of said disc close to a top portion of said walls, each of said top plates including means for holding at least one substrate in a position facing the interior of each of said reaction chambers. means for rotating said vertical shaft and disc to sequentially transfer each of said top plates holding at least one substrate from one to an adjacent one of said reaction zones, said base of at least one of said reaction chambers including openings for feeding reactant gases toward the substrate holding top plate, a plurality of reactant gas exhaust ports provided in each reaction chamber between said base and said top plate, heating means above the top plate of each reaction chamber, an access opening to the interior of said vacuum chamber, said access opening being through a sidewall of said vacuum chamber adjacent one of said reaction zones, and valve means for opening and closing said access opening, whereby one of said top plates may be withdrawn from one of said arch-shaped cuts of said disc in said reaction zone and replaced by another top plate when said valve is open to permit access to said reaction zone adjacent said opening.