US4950044A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical semiconductor device for demultiplexing wavelength multiplexed lights
Assignee: NEC Corp
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Filing: 1988-09-19
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Granted: 1990-08-21
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Expires: 2008-09-19
Abstract
Abstract An optical semiconductor device for demultiplexing wavelength multiplexed lights utilizes a plurality of waveguides including a superlattice structure, a plurality of directional couplers for coupling two neighboring waveguides among the plurality of waveguides, and a plurality of electrodes for applying different voltages to the plurality of waveguides. When the different voltages are applied to the plurality of waveguides, light having a first wavelength is absorbed in a first waveguide among the plurality of waveguides, while the other remaining lights are waveguided through the first waveguide and transferred through a first directional coupler among the plurality of directional couplers to a second waveguide among the plurality of waveguides. In the second waveguide, light having a second wavelength is absorbed and the other remaining lights are waveguided therethrough. Thus, the wavelength multiplexed lights are demultiplexed and detected therein.
Inventors
- 👤 Kiko Makita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:07
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/29; G02F1/31; G02F1/313; G02F1/3132; G02F1/3133; B; B82; B82Y; B82Y20/00; G02F1/01; G02F1/015; G02F1/017; G02F2202/00; G02F2202/10; G02F2202/102; G02F2203/00; G02F2203/05; G02F2203/055
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
161 words
An optical semiconductor device for demultiplexing wavelength multiplexed lights comprising: a plurality of waveguides each including first to third semiconductor layers; said first semiconductor layer being grown on a substrate, said second semiconductor layer being grown on said first semiconductor layer and being of a larger refractive index and a lower absorption edge energy than said first semiconductor layer and including a superlattice structure which functions as an optical absorption and waveguide layer, and said third semiconductor layer being grown on said second semiconductor layer and being of a lower refractive index and a larger absorption edge energy than said second semiconductor layer; a plurality of directional couplers each coupling two neighboring waveguides optically among said plurality of waveguides; and a plurality of electrodes for applying different voltages to said plurality of waveguides, wherein absorption edge energies are different in said plurality of waveguides in accordance with said different voltages applied across said plurality of waveguides by said plurality of electrodes.
Claim 2
Dependent Claim
161 words
An optical semiconductor device for demultiplexing wavelength multiplexed lights comprising: a plurality of waveguides each including first to third semiconductor layers; said first semiconductor layer being grown on a substrate, said second semiconductor layer being grown on said first semiconductor layer and being of a larger refractive index and a lower absorption edge energy than said first semiconductor layer and including a superlattice structure which functions as an optical absorption and waveguide layer, and said third semiconductor layer being grown on said second semiconductor layer and being of a lower refractive index and a larger absorption edge energy than said second semiconductor layer; a plurality of directional couplers each coupling two neighboring waveguides optically among said plurality of waveguides; and a plurality of electrodes for applying different voltages to said plurality of waveguides, wherein absorption edge energies are different in said plurality of waveguides in accordance with said different voltages applied across said plurality of waveguides by said plurality of electrodes.
Claim 3
Dependent Claim
64 words
An optical semiconductor device for demultiplexing wavelength multiplexed lights according to claim 1, wherein each of said plurality of waveguides includes a protruded region above the top surface of said third semiconductor layer, said protruded region being of a conduction type which is different from that of said third semiconductor layer and being in contact with a corresponding one of said plurality of electrodes.
Claim 4
Dependent Claim
27 words
An optical semiconductor device for demultiplexing wavelength multiplexed lights according to claim 1, wherein each of said plurality of directional couplers is of a complete coupling length.
Claim 5
Dependent Claim
59 words
An optical semiconductor device for demultiplexing wavelength multiplexed lights according to claim 1, wherein said plurality of waveguides are arranged such that each of said plurality of waveguides is staggered in an incident direction of said wavelength multiplexed lights, except at a corresponding one of said plurality of directional couplers, and in a direction orthogonal to said incident direction.
References Cited (Backward Citations)
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