Drive circuit for use with voltage-drive semiconductor device

Claim 2

In a common drive output circuit for driving dissimilar switching semiconductor devices having different drive input characteristics by turning on and off dc power supplies to apply a voltage between drive input terminals of either one of said switching semiconductor devices through two transistors connected in a Darlington pair, the improvement wherein a collector circuit of one of said two transistors which is not at the output stage has a diode inserted in series which has such a polarity as to permit passage of the collector current.

Claim 3

A gate drive circuit for use with a voltage-driven semiconductor device, comprising: a reflux diode connected in series and in opposite direction to the output side of said drive circuit; a constant voltage circuit that supplies a gate of said semiconductor device with a voltage that is higher than a threshold voltage of said semiconductor device but which is lower than a voltage applied in a steady state; and a timer that allows said constant voltage circuit to operate, when said semiconductor device is on, for at least the period of time by which a reverse recovery time of said diode lapses.

Claim 4

A gate drive circuit for use with a voltage-driven semiconductor device, comprising: a reflux diode connected in series and in opposite direction to the output side of said drive circuit; a constant voltage circuit that supplies a gate of said semiconductor device with a voltage that is higher than a threshold voltage of said semiconductor device but which is lower than a voltage applied in a steady state; and a timer that allows said constant voltage circuit to operate, when said semiconductor device is on, for at least the period of time by which a reverse recovery time of said diode lapses.

Claim 5

A gate drive circuit for use with a voltage-driven semiconductor device, comprising: a reflux diode connected in series and in opposite direction to the output side of said drive circuit; and a pair of switching elements at the output stage that operate in a complementary way to turn on and off said semiconductor device; wherein one of said switching elements for turning on the semiconductor device has a shorter switching time than the other for turning off the semiconductor device in such a way that when said semiconductor device is on, said two switching elements turn on simultaneously for a certain period of time which is at least longer than the reverse recovery time of the reflux diode, a gate of said semiconductor device being supplied with a voltage that is higher than a threshold voltage of said semiconductor device but lower than a voltage applied in a steady state.

Claim 6

A gate drive circuit for use with a voltage-driven semiconductor device, comprising: a reflux diode connected in series and in opposite direction to the output side of said drive circuit; and a pair of switching elements at the output stage that operate in a complementary way to turn on and off said semiconductor device; wherein one of said switching elements for turning on the semiconductor device has a shorter switching time than the other for turning off the semiconductor device in such a way that when said semiconductor device is on, said two switching elements turn on simultaneously for a certain period of time which is at least longer than the reverse recovery time of the reflux diode, a gate of said semiconductor device being supplied with a voltage that is higher than a threshold voltage of said semiconductor device but lower than a voltage applied in a steady state.

Claim 7

A drive circuit for use with a voltage-driven semiconductor device, comprising a drive section having as constituent elements at least a signal insulating photocoupler and a pair of complementary output transistors; and a protecting section for protecting said voltage-driven semiconductor device from overcurrent that develops when a shorting accident occurs in said device being driven; wherein said protecting section is composed of detection means that monitors a voltage at the input main terminal of said voltage-driven semiconductor device in the presence of a drive signal and which produces a detection signal if said voltage exceeds a predetermined level, and a variable voltage source that gradually lowers the voltage with time while said detection means is operating, with a diode being connected between said variable voltage source and the base terminal of each of said output transistors in such a way that an anode is directed to said base terminal.

Claim 8

A drive circuit for use with a voltage-driven semiconductor device, comprising a drive section having as constituent elements at least a signal insulating photocoupler and a pair of complementary output transistors; and a protecting section for protecting said voltage-driven semiconductor device from overcurrent that develops when a shorting accident occurs in said device being driven; wherein said protecting section is composed of detection means that monitors a voltage at the input main terminal of said voltage-driven semiconductor device in the presence of a drive signal and which produces a detection signal if said voltage exceeds a predetermined level, and a variable voltage source that gradually lowers the voltage with time while said detection means is operating, with a diode being connected between said variable voltage source and the base terminal of each of said output transistors in such a way that an anode is directed to said base terminal.

Claim 9

A drive circuit for use with a voltage-driven semiconductor device, comprising: a drive section having as constituent elements at least a signal insulating photocoupler and a pair of complementary output transistors; detection means that monitors a voltage at an input main terminal of said voltage-driven semiconductor device in the presence of a drive signal and which produces a detection signal if said voltage exceeds a predetermined level; and a variable voltage source that gradually lowers the voltage with time while said detection means is operating; wherein said drive circuit further includes a transistor which conducts when said detection means senses that the voltage at the input main terminal of said voltage-driven semiconductor device has exceeded a predetermined level in the presence of a drive signal and a collector terminal of which is connected to a collector terminal of said signal insulating photocoupler via a diode the forward direction of which is toward said transistor.

Claim 10

A drive circuit for use with a voltage-driven semiconductor device, comprising: a drive section having as constituent elements at least a signal insulating photocoupler and a pair of complementary output transistors; detection means that monitors a voltage at an input main terminal of said voltage-driven semiconductor device in the presence of a drive signal and which produces a detection signal if said voltage exceeds a predetermined level; and a variable voltage source that gradually lowers the voltage with time while said detection means is operating; wherein said drive circuit further includes a transistor which conducts when said detection means senses that the voltage at the input main terminal of said voltage-driven semiconductor device has exceeded a predetermined level in the presence of a drive signal and a collector terminal of which is connected to a collector terminal of said signal insulating photocoupler via a diode the forward direction of which is toward said transistor.

Claim 11

A drive circuit for use with a voltage-driven semiconductor device, comprising a drive section having as constituent elements at least a signal insulating photocoupler and a pair of complementary output transistors; and a protecting section for protecting said voltage-driven semiconductor device from overcurrent that develops when a shorting accident occurs in said device being driven; wherein the pair of complementary output transistors in said drive section consists of an FET as a transistor for turning on said device and a bipolar transistor as a transistor for turning it off.

Claim 12

A drive circuit for use with a voltage-driven semiconductor device, comprising a drive section having as constituent elements at least a signal insulating photocoupler and a pair of complementary output transistors; and a protecting section for protecting said voltage-driven semiconductor device from overcurrent that develops when a shorting accident occurs in said device being driven; wherein the pair of complementary output transistors in said drive section consists of an FET as a transistor for turning on said device and a bipolar transistor as a transistor for turning it off.

Claim 13

A drive circuit for use with a voltage-driven semiconductor device, comprising a drive section having as constituent elements at least a signal insulating photocoupler and a pair of complementary output transistors; a protecting section composed of detection means that monitors a voltage at an input main terminal of said voltage-driven semiconductor device in the presence of a drive signal and which produces a detection signal if said voltage exceeds a predetermined level and a variable voltage source that gradually lowers the voltage with time while said detection means is operating; wherein a positive electrode terminal of a capacitor as a component of said variable voltage source in said protecting section is connected to a gate terminal of said voltage-driven semiconductor device via a diode.

Claim 14

A drive circuit for use with a voltage-driven semiconductor device, comprising a drive section having as constituent elements at least a signal insulating photocoupler and a pair of complementary output transistors; a protecting section composed of detection means that monitors a voltage at an input main terminal of said voltage-driven semiconductor device in the presence of a drive signal and which produces a detection signal if said voltage exceeds a predetermined level and a variable voltage source that gradually lowers the voltage with time while said detection means is operating; wherein a positive electrode terminal of a capacitor as a component of said variable voltage source in said protecting section is connected to a gate terminal of said voltage-driven semiconductor device via a diode.

Claim 15

A drive circuit for use with a voltage-driven semiconductor device, comprising: a drive section having as constituent elements a pair of output transistors consisting of a forward bias applying transistor that applies a forward voltage between gate and cathode of said voltage-driven semiconductor device to turn it on and a reverse bias applying transistor that applies a reverse voltage between the gate and cathode of said device to turn it off; detection means that monitors a voltage at an input main terminal of said device in the presence of a drive signal and which produces a detection signal if said voltage exceeds a predetermined level; means that inactivates said forward bias applying transistor when the detection signal is produced by said detection means so as to remove the forward voltage applied; and a resistor that becomes effective with at least the applied forward voltage being removed and without any reverse voltage being applied on account of inactivation of said reverse bias applying transistor and which forms a shunt between the gate and cathode of said semiconductor device.

Claim 16

A drive circuit for use with a voltage-driven semiconductor device, comprising: a drive section having as constituent elements a pair of output transistors consisting of a forward bias applying transistor that applies a forward voltage between gate and cathode of said voltage-driven semiconductor device to turn it on and a reverse bias applying transistor that applies a reverse voltage between the gate and cathode of said device to turn it off; detection means that monitors a voltage at an input main terminal of said device in the presence of a drive signal and which produces a detection signal if said voltage exceeds a predetermined level; means that inactivates said forward bias applying transistor when the detection signal is produced by said detection means so as to remove the forward voltage applied; and a resistor that becomes effective with at least the applied forward voltage being removed and without any reverse voltage being applied on account of inactivation of said reverse bias applying transistor and which forms a shunt between the gate and cathode of said semiconductor device.