US4947401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser array
Assignee: Mitsubishi Electric Corp
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Filing: 1989-01-31
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Granted: 1990-08-07
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Expires: 2009-01-31
Abstract
Abstract A semiconductor laser array including multiple semiconductor layers serially disposed on each other to form a plurality of laser stripes that are laterally disposed within the layers each of the lasers stripes including a waveguide of a particular width wherein each of the waveguides has either a relatively wide width or a relatively narrow width and the stripes are laterally arranged with alternatingly wide and narrow waveguides.
Inventors
- 👤 Susumu Hinata
- 👤 Yoshito Seiwa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:08
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/20; H01S5/24; H01S5/4081
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
128 words
In a semiconductor laser array the combination comprising, an active semiconductor layer sandwiched between first and second semiconductor cladding layers, said first cladding layer being of a first conductivity type and said second cladding layer being of a second conductivity type different from said first conductivity type, discontinuous semiconductor current blocking layer means associated with said cladding layers for defining individual laser stripes in the active layer, and a semiconductor substrate of said first conductivity type disposed under at least part of said first cladding layer and contacting said current blocking layer, said discontinuous current blocking layer means including a plurality of portions alternating relatively widely and narrowly spaced apart to form a plurality of corresponding alternatily relatively wide and relatively narrow active portions of said active layer.
Claim 2
Dependent Claim
128 words
In a semiconductor laser array the combination comprising, an active semiconductor layer sandwiched between first and second semiconductor cladding layers, said first cladding layer being of a first conductivity type and said second cladding layer being of a second conductivity type different from said first conductivity type, discontinuous semiconductor current blocking layer means associated with said cladding layers for defining individual laser stripes in the active layer, and a semiconductor substrate of said first conductivity type disposed under at least part of said first cladding layer and contacting said current blocking layer, said discontinuous current blocking layer means including a plurality of portions alternating relatively widely and narrowly spaced apart to form a plurality of corresponding alternatily relatively wide and relatively narrow active portions of said active layer.
Claim 3
Dependent Claim
36 words
The combination of claim 1 wherein the total number of said plurality of alternately relatively wide and relatively narrow active portions is an odd number and there are more relatively wide portions than relatively narrow portions.
Claim 4
Dependent Claim
25 words
The combination of claim 2 wherein the total number of said plurality of alternately relatively wide and relatively narrow active portions is at least 5.
Claim 5
Dependent Claim
30 words
The combination of claim 3 wherein said discontinuous current blocking layer includes a plurality of portions of substantially uniform size, thereby to uniformly space said wide and narrow active portions.
Claim 6
Dependent Claim
40 words
The combination of claim 1 wherein said discontinuous current blocking layer includes a plurality of mesa-shaped portions alternately spaced widely and narrowly apart, and said first cladding layer is disposed on and between said mesa-shaped portions touching said contacting layer.
Claim 7
Dependent Claim
34 words
The combination of claim 1 wherein said discontinuous current blocking layer includes a plurality of pyramidal-shaped portions, and said contacting layer is disposed on and between said pyramidal-shaped portions touching said first cladding layer.
Claim 8
Dependent Claim
35 words
The combination of claim 1 wherein said discontinuous current blocking layer includes a plurality of generally trapezoidal-shaped portions, and said first cladding layer is disposed on and between said trapezoidal-shaped portions touching said contacting layer.
Claim 9
Dependent Claim
17 words
The combination of claim 7 wherein said contacting layer is disposed between and touching said trapezoidal portions.
Claim 10
Dependent Claim
12 words
The combination of claim 1 wherein said first cladding layer is p-type.
Claim 11
Dependent Claim
17 words
The combination of claim 1 wherein said active layer is chosen from one of GaAs and AlGaAs.
Claim 12
Dependent Claim
96 words
In a semiconductor laser array the combination comprising, multiple semiconductor layers defining a plurality of parallel laser stripes, the laser stripes defining individual waveguide means spaced sufficiently closely for interacting to produce a fundamental supermode and higher order supermodes, the waveguides being of two widths including a first relatively wide width and a second narrower width, the waveguides being arranged with alternating wide and narrow widths constituting means for rendering the modal gain of the first supermode higher than that of the higher order supermodes, and spreading energy in the first supermode substantially across the array.
Claim 13
Dependent Claim
96 words
In a semiconductor laser array the combination comprising, multiple semiconductor layers defining a plurality of parallel laser stripes, the laser stripes defining individual waveguide means spaced sufficiently closely for interacting to produce a fundamental supermode and higher order supermodes, the waveguides being of two widths including a first relatively wide width and a second narrower width, the waveguides being arranged with alternating wide and narrow widths constituting means for rendering the modal gain of the first supermode higher than that of the higher order supermodes, and spreading energy in the first supermode substantially across the array.
Claim 14
Dependent Claim
26 words
The combination of claim 11 wherein the total number of waveguides is an odd number and there are more relatively wide waveguides than relatively narrow waveguides.
Claim 15
Dependent Claim
15 words
The combination of claim 12 wherein the total number of waveguides is at least 5.
Claim 16
Dependent Claim
13 words
The combination of claim 11 wherein said waveguides are generally uniformly spaced apart.
Claim 17
Dependent Claim
33 words
The combination of claim 11 wherein said multiple layers include a discontinuous current blocking layer having a plurality of spaced apart portions and said waveguides are defined at least partially by said portions.
Claim 18
Dependent Claim
10 words
The combination of claim 15 wherein said portions are mesa-shaped.
Claim 19
Dependent Claim
10 words
The combination of claim 15 wherein said portions are pyramidal-shaped.
Claim 20
Dependent Claim
11 words
The combination of claim 15 wherein said portions are generally trapezoidal-shaped.
Claim 21
Dependent Claim
14 words
The combination of claim 11 wherein said waveguides include one of GaAs and AlGaAs.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-06 | 1994-02-05 | 1994-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-06 | 1998-02-05 | 1998-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-06 | 2002-02-05 | 2002-08-07 | $7700.00 | Window Closed / Lapsed |