US4944925A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for producing single crystals
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1989-05-25
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Granted: 1990-07-31
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Expires: 2009-05-25
Abstract
Abstract A method of producing single crystals is characterized in that in withdrawing a semiconductor or dielectric material from its molten state while allowing it to grow into a single crystal solid, a die heated to a temperature higher than the solidifying point of the melt is disposed at the melt withdrawing outlet and the single crystal is withdrawn through the die.
Inventors
- 👤 Kazuhisa Yamauchi
- 👤 Kazuo Sawada
- 👤 Yoshihiro Nakai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:08
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/20; C30B15/22; C30B15/24; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/30; C30B29/40; C30B29/42; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1036; Y10T117/1044; Y10T117/1068
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
182 words
An apparatus for growing single crystals, comprising a crucible for holding a melt of material of which said single crystals are to be grown, first separately controllable heating means arranged for heating said crucible to a first melt temperature sufficient to keep said material in a molten state in said crucible, a die located in contact with said melt, said die consisting of a die body forming a melt withdrawing outlet located for pulling a single crystal out of said melt and of second heating means controllable separately and independently of said first heating means, said second heating means being embedded directly inside said die body around said melt withdrawing outlet of said die body so that said die body and said second heating means form a single integral one piece structure for independently and directly heating said die body to a second die temperature sufficiently higher than said first melt temperature for maintaining a well defined temperature gradient between said melt and said die outlet for stabilizing a solid-liquid interface at or near said melt withdrawing outlet of said die body.
Claim 2
Independent Claim
182 words
An apparatus for growing single crystals, comprising a crucible for holding a melt of material of which said single crystals are to be grown, first separately controllable heating means arranged for heating said crucible to a first melt temperature sufficient to keep said material in a molten state in said crucible, a die located in contact with said melt, said die consisting of a die body forming a melt withdrawing outlet located for pulling a single crystal out of said melt and of second heating means controllable separately and independently of said first heating means, said second heating means being embedded directly inside said die body around said melt withdrawing outlet of said die body so that said die body and said second heating means form a single integral one piece structure for independently and directly heating said die body to a second die temperature sufficiently higher than said first melt temperature for maintaining a well defined temperature gradient between said melt and said die outlet for stabilizing a solid-liquid interface at or near said melt withdrawing outlet of said die body.
Claim 3
Dependent Claim
22 words
The apparatus of claim 1, further comprising layer means covering said integral structure of said second heater means and said die body.
Claim 4
Dependent Claim
29 words
The apparatus of claim 2, wherein said layer means comprise at least one layer of boric oxide on said integral structure of said die body and second heating means.
Claim 5
Dependent Claim
23 words
The apparatus of claim 1, wherein said integral structure of said die body and said second heating means form approximately a doughnut shape.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-30 | 1994-01-29 | 1994-07-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-30 | 1998-01-29 | 1998-07-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-30 | 2002-01-29 | 2002-07-31 | $7700.00 | Window Closed / Lapsed |