US4943841A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wiring structure for semiconductor integrated circuit device
Assignee: Mitsubishi Electric Corp
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Filing: 1988-10-06
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Granted: 1990-07-24
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Expires: 2008-10-06
Abstract
Abstract A wiring structure for a semiconductor integrated circuit device having a common wiring region such as a gate array comprises a lower wiring layer formed on a semiconductor substrate with a predetermined lattice form and an upper wiring layer formed on an insulating film on the lower layer with a lattice form orthogonal to the lower lattice. The wiring lattice of the lower wiring layer is cut at intermediate portions thereof between the wiring lattices of the upper wiring layer into segments, ends of the segments being exposed through through-holes perforated in the insulating film in portion thereof except crossing points of the upper and lower wiring lattices. Predetermined through-holes are buried with a connecting wiring having a predetermined pattern at the time of forming the wiring lattice of the upper wiring layer to connect the upper layer to the lower layer and are buried with discretely provided connecting wirings to connect the segments to each other. Since the wiring structure can be formed by the single step wiring processing to a semicustomized LSI having a common region such as gate array, the number of photomasks is minimized for customization of the semicustomized LSI.
Inventors
- 👤 Toshihiko Yahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10D; H10D84/00; H10D84/90
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
173 words
A semiconductor integrated circuit structure comprising: a semiconductor substrate (11); a first insulating layer (12) provided on said substrate; a first wiring layer (13) disposed on said first insulating layer, said first wiring layer including a plurality of electrically isolated conductive segments each having a first end and a second end; a second insulating layer (14) disposed on said first wiring layer, said second insulating layer including means for defining plural openings each dimensioned and positioned so as to simultaneously contain a first end of one of said plurality of conductive segments and a second end of a further one of said plurality of conductive segments; and a second wiring layer (15) formed on said second insulating layer, said second wiring layer including plural planar conductors disposed on said second insulating layer and further including conductive material disposed within selected ones of said openings and not connected to any of said upper wiring layer conductors, said conductive material establishing an electrical connection between ends of different ones of said first wiring layer segments.
Claim 2
Dependent Claim
173 words
A semiconductor integrated circuit structure comprising: a semiconductor substrate (11); a first insulating layer (12) provided on said substrate; a first wiring layer (13) disposed on said first insulating layer, said first wiring layer including a plurality of electrically isolated conductive segments each having a first end and a second end; a second insulating layer (14) disposed on said first wiring layer, said second insulating layer including means for defining plural openings each dimensioned and positioned so as to simultaneously contain a first end of one of said plurality of conductive segments and a second end of a further one of said plurality of conductive segments; and a second wiring layer (15) formed on said second insulating layer, said second wiring layer including plural planar conductors disposed on said second insulating layer and further including conductive material disposed within selected ones of said openings and not connected to any of said upper wiring layer conductors, said conductive material establishing an electrical connection between ends of different ones of said first wiring layer segments.
Claim 3
Dependent Claim
50 words
An integrated circuit structure as in claim 1 wherein said first wiring layer segments are dimensioned in the direction axial thereto such that second wiring layer conductors disposed so as to cross said first wiring layer segments are not connected to said first wiring layer segments by said conductive material.
Claim 4
Dependent Claim
25 words
An integrated circuit structure as in claim 1 wherein: said openings each have a width greater than the width of said first wiring layer segments.
Claim 5
Dependent Claim
26 words
An integrated circuit structure as in claim 1 wherein said first wiring layer segment ends adjoin one another at positions between adjacent second wiring layer conductors.
Claim 6
Dependent Claim
19 words
An integrated circuit as in claim 1 wherein said second wiring layer is formed using only a single photomask.
Claim 7
Dependent Claim
37 words
An integrated circuit structure as in claim 1 wherein: said substrate includes electronic devices formed therein; and said first insulating layer includes contact holes for establishing electrical connections between said first wiring layer and said electronic devices.
Claim 8
Dependent Claim
130 words
In a custom semiconductor integrated circuit device of the type including: a semiconductor substrate; a first insulating layer provided on said substrate; a first wiring layer disposed on said first insulating layer, said first wiring layer including a plurality of electrically isolated conductive segments each having a first end and a second end; and a second insulating layer disposed on said first wiring layer, an improvement comprising: means in said second insulating layer for defining at least one opening dimensioned and positioned so as to simultaneously contain a first end of one of said plurality of conductive segments and a second end of a further one of said plurality of conductive segments; and conductive material means disposed within said opening for electrically connecting said first and further conductive segments together.
Claim 9
Dependent Claim
130 words
In a custom semiconductor integrated circuit device of the type including: a semiconductor substrate; a first insulating layer provided on said substrate; a first wiring layer disposed on said first insulating layer, said first wiring layer including a plurality of electrically isolated conductive segments each having a first end and a second end; and a second insulating layer disposed on said first wiring layer, an improvement comprising: means in said second insulating layer for defining at least one opening dimensioned and positioned so as to simultaneously contain a first end of one of said plurality of conductive segments and a second end of a further one of said plurality of conductive segments; and conductive material means disposed within said opening for electrically connecting said first and further conductive segments together.
References Cited (Backward Citations)
US4689657A
Cited
GB2122809A
Cited
US4716308A
Cited
GB2137413A
Cited
US4568961A
Cited
US4673966A
Cited
JPS60247950A
Cited
US4689654A
Cited
US4825273A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-23 | 1994-01-22 | 1994-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-23 | 1998-01-22 | 1998-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-23 | 2002-01-22 | 2002-07-24 | $7700.00 | Window Closed / Lapsed |