US4942449A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips
Assignee: Intersil Corp
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Filing: 1988-03-28
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Granted: 1990-07-17
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Expires: 2008-03-28
Abstract
Abstract A method for forming a field oxide isolation region for a field effect transistor for use in integrated circuit chip devices includes process steps which preserve planarity while at the same time providing an increased degree of radiation hardness. The bird's beak region of the device is provided with both thermally grown and deposited oxide layers in a planarity preserving process.
Inventors
- 👤 Ching-Yeu Wei
- 👤 Patricia A. Piacente
- 👤 Henry H. Woodbury
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:15
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/014; H10W10/10; H10W10/13; H10W10/17
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
108 words
A field isolation structure for field effect transistors, said structure comprising: a doped silicon plateau region exhibiting a raised, substantially planar central region having a sidewall sloping downwardly away from said central region; a layer of thermally grown silicon oxide surrounding said central region and including at least a portion extending onto said central region, said oxide layer being tapered in the direction of said sloping sidewall; and a layer of deposited silicon oxide disposed over and in contact with said thermally grown silicon oxide at least along substantially most of said sidewall and extending, along said portion of said thermally grown silicon oxide, to said central region.
Claim 2
Dependent Claim
108 words
A field isolation structure for field effect transistors, said structure comprising: a doped silicon plateau region exhibiting a raised, substantially planar central region having a sidewall sloping downwardly away from said central region; a layer of thermally grown silicon oxide surrounding said central region and including at least a portion extending onto said central region, said oxide layer being tapered in the direction of said sloping sidewall; and a layer of deposited silicon oxide disposed over and in contact with said thermally grown silicon oxide at least along substantially most of said sidewall and extending, along said portion of said thermally grown silicon oxide, to said central region.
Claim 3
Dependent Claim
24 words
The structure of claim 1 in which said thermally grown silicon oxide on said sidewall is between approximately 100 and 2,000 angstroms in thickness.
Claim 4
Dependent Claim
18 words
The structure of claim 1 in which said deposited silicon oxide layer is approximately 2,000 angstroms in thickness.
Claim 5
Dependent Claim
32 words
The structure of claim 1 in which said deposited silicon oxide layer is approximately twice as thick as said layer of thermally grown silicon oxide in the region of said sloping sidewall.
Claim 6
Dependent Claim
101 words
A silicon field effect transistor structure having an active area and a bird's beak region surrounding said active area, said bird's beak region including a silicon substrate and field isolation silicon oxide in direct contact with said substrate in said bird's beak region, a thin layer of thermally grown silicon oxide formed on said field isolation silicon oxide and extending into the periphery of said active area, and a thick layer of deposited silicon oxide on said thin layer of thermally grown silicon oxide, said thick layer being approximately twice as thick as said thin layer in said bird's beak region.
Claim 7
Dependent Claim
101 words
A silicon field effect transistor structure having an active area and a bird's beak region surrounding said active area, said bird's beak region including a silicon substrate and field isolation silicon oxide in direct contact with said substrate in said bird's beak region, a thin layer of thermally grown silicon oxide formed on said field isolation silicon oxide and extending into the periphery of said active area, and a thick layer of deposited silicon oxide on said thin layer of thermally grown silicon oxide, said thick layer being approximately twice as thick as said thin layer in said bird's beak region.
References Cited (Backward Citations)
US4104086A
Cited
JPS55166959A
Cited
US4333965A
Cited
US4642878A
Cited
US4743566A
Cited
US4842675A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-16 | 1994-01-15 | 1994-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-16 | 1998-01-15 | 1998-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-16 | 2002-01-15 | 2002-07-17 | $7700.00 | Window Closed / Lapsed |