Abstract A parallel sweeping system for electrostatic sweeping ion implanters comprising an ion source for generating an ion beam, first and second multipole beam deflectors along and around a common optical axis and a target wafer to be raster-scanned by the deflected beam. The two deflectors have the same number of electrodes of five or more and have similar configurations. One electrode of the first deflector is paired with an electrode of the second deflector in the same plane common with the optical axis, but on the opposite side of the optical axis. The same sweeping voltage is applied simultaneously to each electrode of a pair in the same plane and predetermined different voltages to each pair of electrodes. Thus, a substrate is constantly raster-scanned by means of parallel ion beams with predetermined direction, namely raster-scanned with the ion beam all over a large wafer with exact parallelism to the optical axis.
A parallel sweeping system for electrostatic sweeping ion implanters, comprising: (a) an ion source for generating charged ion beams, (b) a first electrostatic deflector comprising a plurality of more than four electrodes equally spaced around an optical axis, (c) a second electrostatic deflector comprising the same plurality of electrodes also equally spaced around said optical axis and axially spaced from said first deflector. (d) means for electrically connecting pairs of said electrodes, one on said first deflector to the one on the opposite side of said axis of said second deflector, (e) means for applying different predetermined voltages to each connected pair of electrodes, and (f) a target wafer to be raster-scanned by said ion beams with exact parallelism to said optical axis.
Claim 2
Dependent Claim
123 words
A parallel sweeping system for electrostatic sweeping ion implanters, comprising: (a) an ion source for generating charged ion beams, (b) a first electrostatic deflector comprising a plurality of more than four electrodes equally spaced around an optical axis, (c) a second electrostatic deflector comprising the same plurality of electrodes also equally spaced around said optical axis and axially spaced from said first deflector. (d) means for electrically connecting pairs of said electrodes, one on said first deflector to the one on the opposite side of said axis of said second deflector, (e) means for applying different predetermined voltages to each connected pair of electrodes, and (f) a target wafer to be raster-scanned by said ion beams with exact parallelism to said optical axis.
Claim 3
Dependent Claim
16 words
A system according to claim 1 wherein said electrodes have a rectangular cross-section with rounded corners.
Claim 4
Dependent Claim
16 words
A system according to claim 1 wherein the number of electrodes is eight in each deflector.
Claim 5
Dependent Claim
24 words
A system according to claim 1 wherein said optical axis is at an oblique angle to the plane of the surface of said wafer.