US4939364A
Expired / Lapsed
US
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Specimen or substrate cutting method using focused charged particle beam and secondary ion spectroscopic analysis method utilizing the cutting method
Assignee: Hitachi Ltd
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Filing: 1988-10-05
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Granted: 1990-07-03
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Expires: 2008-10-05
Abstract
Abstract A specimen or substrate cutting method of cutting or processing a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and irradiating the predetermined portion of the specimen or substrate with the focused charged particle beam is disclosed in which a particle species of the charged particle beam is selected such that each of the melting point of the particle species itself and the melting point of an alloy or compound of the particle species and constituent atoms of the specimen or substrate is not lower than 3/2 times of the temperature of the specimen or substrate in units of absolute temperature. A secondary ion mass-spectroscopic analysis method is also disclosed in which the charged particle beam is used as a probe to mass-analyze secondary charged ion successively generated from the cut portion of the specimen or substrate.
Inventors
- 👤 Tohru Ishitani
- 👤 Tsuyoshi Ohnishi
- 👤 Yoshimi Kawanami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:24
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; H01J37/3056
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
116 words
A specimen or substrate cutting method of cutting a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and uniformly irradiating said predetermined portion of said specimen or substrate with said focused charged particle beam, in which a particle species of said charged particle beam is selected such that each of the melting point of said particle species itself and the melting point of an alloy or compound of said particle species and constituent atoms of said specimen or substrate is a temperature not lower than 3/2 times the temperature of said specimen or substrate in units of absolute temperature.
Claim 2
Dependent Claim
116 words
A specimen or substrate cutting method of cutting a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and uniformly irradiating said predetermined portion of said specimen or substrate with said focused charged particle beam, in which a particle species of said charged particle beam is selected such that each of the melting point of said particle species itself and the melting point of an alloy or compound of said particle species and constituent atoms of said specimen or substrate is a temperature not lower than 3/2 times the temperature of said specimen or substrate in units of absolute temperature.
Claim 3
Dependent Claim
32 words
A specimen or substrate cutting method according to claim 1, wherein said temperature not lower than 3/2 times of the temperature of said specimen or substrate is not lower than 180° C.
Claim 4
Dependent Claim
34 words
A specimen or substrate cutting method according to claim 2, wherein the melting point of an ion material of said particle beam source generating said charged particle beam is not higher than 1100° C.
Claim 5
Dependent Claim
24 words
A specimen or substrate cutting method according to claim 3, wherein said ion material of the particle beam source is Pt-Sb or Au-Si alloy.
Claim 6
Dependent Claim
24 words
A specimen or substrate cutting method according to claim 1, wherein the melting point of said particle species is not lower than 2000° C.
Claim 7
Dependent Claim
29 words
A specimen or substrate cutting method according to claim 5, wherein said particle seed is at least one selected from the group consisting of W, Ta, Mo and Nb.
Claim 8
Dependent Claim
40 words
A specimen or substrate cutting method according to claim 6, wherein said ion material of the particle beam source generating said charged particle beam is at least one selected from the group consisting of Al-W, Ta-Ni, Mo-Ni and Nb-Ni alloy.
Claim 9
Dependent Claim
107 words
A specimen or substrate cutting method which comprises; focusing a charged particle beam, irradiating the particle beam on a surface of a specimen or substrate, so as to cut a predetermined portion of the specimen or substrate, wherein the method is operated under the condition of X.sub.1 °K, X.sub.2 °K ≧3/2Y°K where X 1 is a melting temperature of at least one kind of particle species in said charged particle beam, X 2 ° is a melting temperature of alloy or compound composed of said particle species and said specimen or substrate, Y° is a temperature of said specimen or substrate under irradiation of said charged particle.
Claim 10
Dependent Claim
107 words
A specimen or substrate cutting method which comprises; focusing a charged particle beam, irradiating the particle beam on a surface of a specimen or substrate, so as to cut a predetermined portion of the specimen or substrate, wherein the method is operated under the condition of X.sub.1 °K, X.sub.2 °K ≧3/2Y°K where X 1 is a melting temperature of at least one kind of particle species in said charged particle beam, X 2 ° is a melting temperature of alloy or compound composed of said particle species and said specimen or substrate, Y° is a temperature of said specimen or substrate under irradiation of said charged particle.
Claim 11
Dependent Claim
142 words
A secondary ion mass-spectroscopic analysis method including cutting a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and uniformly irradiating said predetermined portion of said specimen or substrate with said focused charged particle beam, in which a particle species of said charged particle beam is selected such that each of the melting point of said particle species itself and the melting point of an alloy or compound of said particle species and constituent atoms of said specimen or substrate is a temperature not lower than 3/2 times the temperature of said specimen or substrate in units of absolute temperature, in which said charged particle beam is used as a probe to mass-analyze secondary ion successively generated from the cut portion of said specimen or substrate.
Claim 12
Dependent Claim
142 words
A secondary ion mass-spectroscopic analysis method including cutting a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and uniformly irradiating said predetermined portion of said specimen or substrate with said focused charged particle beam, in which a particle species of said charged particle beam is selected such that each of the melting point of said particle species itself and the melting point of an alloy or compound of said particle species and constituent atoms of said specimen or substrate is a temperature not lower than 3/2 times the temperature of said specimen or substrate in units of absolute temperature, in which said charged particle beam is used as a probe to mass-analyze secondary ion successively generated from the cut portion of said specimen or substrate.
Claim 13
Dependent Claim
32 words
A secondary ion mass-spectroscopic analysis method according to claim 9, wherein said temperature not lower than 3/2 times of the temperature of said specimen or substrate is not lower than 180° C.
Claim 14
Dependent Claim
34 words
A secondary ion mass-spectroscopic analysis method according to claim 10, wherein the melting point of an ion material in said particle beam source generating said charged particle beam is not higher than 1100° C.
Claim 15
Dependent Claim
24 words
A secondary ion mass-spectroscopic analysis method according to claim 11, wherein said ion material in the particle beam source is Pt-Sb or Au-Si alloy.
Claim 16
Dependent Claim
24 words
A secondary ion mass-spectroscopic analysis method according to claim 9, wherein the melting point of said particle seed is not lower than 2000° C.
Claim 17
Dependent Claim
27 words
A secondary ion mass-spectroscopic analysis method according to claim 13, wherein said particle species is one selected from the group consisting of W, Ta, Mo and Nb.
Claim 18
Dependent Claim
38 words
A secondary ion mass-spectroscopic analysis method according to claim 14, wherein said ion material of the particle beam source generating said charged particle beam is one selected from the group consisting of Al-W, Ta-Ni, Mo-Ni and Nb-Ni alloy.
References Cited (Backward Citations)
US4367429A
Cited
US4687930A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-07-02 | 1994-01-01 | 1994-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-02 | 1998-01-01 | 1998-07-03 | $3760.00 | Window Closed / Lapsed |
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