US4935935A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wavelength tunable electronic and electrooptical semiconductor devices
Assignee: Carnegie Mellon University
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Filing: 1989-06-12
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Granted: 1990-06-19
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Expires: 2009-06-12
Abstract
Abstract This invention relates to an electrically tunable semiconductor device. At least one thin film of piezoelectric substance is positioned in stress transmitting relation to the semiconductor-device and a signal from an electrical circuit causes the piezoelectric to transmit stress to the semiconductor thereby varying the response of the semiconductor device.
Inventors
- 👤 Michael L. Reed
- 👤 Tuviah E. Schlesinger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:08
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/0607; H01S5/0614; H01S5/10; H01S5/18; H01S5/183; H01S5/02; H01S5/026; H01S5/0261; H01S5/062; H01S5/06203; H01S5/06209; H01S5/0622
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
74 words
In an electrooptic semiconductor device having a body of an electrooptic substance and a pair of electrodes positioned against said body connectable to a pumping voltage source, the improvement comprising at least one thin film of a piezoelectric substance connectable to a tuning voltage source positioned against said body of electrooptic substance so as to produce stress therein when said tuning voltage is applied thereto, whereby the spectral response of said device is varied.
Claim 2
Dependent Claim
74 words
In an electrooptic semiconductor device having a body of an electrooptic substance and a pair of electrodes positioned against said body connectable to a pumping voltage source, the improvement comprising at least one thin film of a piezoelectric substance connectable to a tuning voltage source positioned against said body of electrooptic substance so as to produce stress therein when said tuning voltage is applied thereto, whereby the spectral response of said device is varied.
Claim 3
Dependent Claim
28 words
The electrooptic device of claim 1 including two thin films of a piezoelectric substance connectable to a tuning voltage source positioned against said semiconductor device opposite each other.
Claim 4
Dependent Claim
15 words
The electrooptic device of claim 1 in which said electrooptic substance is a semiconductor laser.
Claim 5
Dependent Claim
18 words
The electrooptic device of claim 3 in which said electrooptic substance is a double heterostructure GaAs/AlGaAs semiconductor laser.
Claim 6
Dependent Claim
37 words
The electrooptic device of claim 3 in which said thin film of piezoelectric substance is a film selected from the group consisting of barium titanate, zinc oxide, lead titanate, lead zirconate, lead zirconium titanate and lithium niobate.
Claim 7
Dependent Claim
89 words
In a stress responsive semiconductor device having a first pair of electrodes connectable to a first electrical circuit positioned against said semiconductor device opposite each other, the improvement comprising at least one thin film of a piezoelectric substance positioned in stress transmitting relation with said semiconductor device and connectable to a second electrical circuit, whereby energization of said second electrical circuit causes said piezoelectric thin film to transmit stress to said semiconductor device, thereby varying the response of said semiconductor device in correspondence with said second electrical circuit energization.
Claim 8
Dependent Claim
89 words
In a stress responsive semiconductor device having a first pair of electrodes connectable to a first electrical circuit positioned against said semiconductor device opposite each other, the improvement comprising at least one thin film of a piezoelectric substance positioned in stress transmitting relation with said semiconductor device and connectable to a second electrical circuit, whereby energization of said second electrical circuit causes said piezoelectric thin film to transmit stress to said semiconductor device, thereby varying the response of said semiconductor device in correspondence with said second electrical circuit energization.
Claim 9
Dependent Claim
15 words
The device of claim 6 in which said semiconductor device is a semiconductor laser diode.
Claim 10
Dependent Claim
16 words
The device of claim 6 in which said semiconductor device is a light emitting semiconductor diode.
Claim 11
Dependent Claim
16 words
The device of claim 6 in which said semiconductor device is a light sensitive semiconductor diode.
Claim 12
Dependent Claim
27 words
The device of claim 6 in which said semiconductor device and said thin film of piezoelectric substance are affixed to said substrate on the same side thereof.
Claim 13
Dependent Claim
26 words
The device of claim 6 in which said semiconductor device and said thin film of piezoelectric substance are affixed to said substrate on opposite sides thereof.
Claim 14
Dependent Claim
15 words
The device of claim 6 in which said semiconductor device is a surface-emitting semiconductor laser.
Claim 15
Dependent Claim
15 words
The device of claim 6 in which said semiconductor device is a quantum well device.
Claim 16
Dependent Claim
16 words
The device of claim 6 in which said second electrical circuit is an alternating current circuit.
Claim 17
Dependent Claim
16 words
The device of claim 6 in which said second electrical circuit is a direct current signal.
Claim 18
Dependent Claim
19 words
The device of claim 6 in which said semiconductor device is at least partially surrounded by said thin film.
Claim 19
Dependent Claim
16 words
The device of claim 6 in which said semiconductor device is encapsulated in said thin film.
Claim 20
Dependent Claim
68 words
The device of claim 6 including first and second thin films of piezoelectric substance affixed to said substrate in stress transmitting relation with said semiconductor device, said first and second thin films being electrically separated from each other, said second thin film being connectable to a third electrical circuit for carrying a signal having an electrical phase relation shifted 180° from the signal of said second electrical circuit.
Claim 21
Dependent Claim
65 words
The device of claim 6 including first and second thin films of piezoelectric substance affixed to said substrate in stress transmitting relation with said semiconductor device, said first and second thin films being electrically separated from each other, said second thin film being connectable to a third electrical circuit for carrying a signal having an opposite polarity from the signal of said second electrical circuit.
Claim 22
Dependent Claim
62 words
The device of claim 6 including on opposite sides of said semiconductor device at least two thin films of piezoelectric substance sandwiched with at least three flat electrodes, said films and said electrodes being normal to said semiconductor device and to said substrate, means for electrically connecting together said oppositely positioned electrodes, and means for electrically connecting alternate pairs of said electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-06-18 | 1993-12-18 | 1994-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-18 | 1997-12-18 | 1998-06-19 | $3760.00 | Window Closed / Lapsed |
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