High thermal conductivity/low alpha emission molding compound containing high purity semiconductor filler and integrated circuit package

Claim 2

An improved integrated circuit package comprising an integrated circuit die encapsulated by a molding compound having a semiconductor filler material therein selected from the class consisting of arsenic, boron, gallium, germanium, phosphorus, and silicon to enhance the thermal conductivity of said molding compound, said molding encapsulant having a thickness ranging from at least about 20 mils (about 509 microns) to about 300 mils (about 7634 microns).

Claim 3

The improved integrated circuit package of claim 1 wherein said semiconductor filler material comprises about 68-72 wt.% of said molding compound.

Claim 4

An improved integrated circuit package comprising an integrated circuit die encapsulated by a molding compound having a high purity semiconductor filler material therein to reduce alpha errors from alpha particle emitting radioactive impurities in the filler material, said molding encapsulant having a minimum thickness of at least about 50 mils (about 1272 microns).

Claim 5

An improved integrated circuit package comprising an integrated circuit die encapsulated by a molding compound having a high purity semiconductor filler material therein to reduce alpha errors from alpha particle emitting radioactive impurities in the filler material, said molding encapsulant having a minimum thickness of at least about 50 mils (about 1272 microns).

Claim 6

The improved integrated circuit package of claim 3 wherein said high purity semiconductor filler material comprises a high purity crystalline semiconductor.

Claim 7

The improved integrated circuit package of claim 4 wherein said high purity crystalline semiconductor filler material further comprises single crystal material.

Claim 8

The improved integrated circuit package of claim 5 wherein said high purity single crystal semiconductor filler material consists essentially of high purity single crystal silicon material.

Claim 9

The improved integrated circuit package of claim 3 wherein said high purity semiconductor material is doped with from about 1×10 15 to about 1×10 20 atoms/cm 3 of a dopant to enhance the thermal conductivity of said semiconductor material.

Claim 10

The improved integrated circuit package of claim 7 wherein said high purity semiconductor material consists essentially of crystalline silicon doped with a Group IIIA-VA element selected from the class of boron, phosphorus, and arsenic to enhance the thermal conductivity of said high purity semiconductor material.

Claim 11

The improved integrated circuit package of claim 7 wherein said high purity semiconductor material consists essentially of single crystal silicon doped with a Group IIIA-VA element selected from the class of boron, phosphorus, and arsenic t-o enhance the thermal conductivity of said single crystal silicon.

Claim 12

The improved integrated circuit package of claim 7 wherein said high purity doped semiconductor filler material comprises particulated material having a particle size range of from about 10 to 150 microns.

Claim 13

The improved integrated circuit package of claim 6 wherein said high purity single crystal semiconductor material has a particle size range of from 20 to 100 microns.

Claim 14

The improved integrated circuit package of claim 3 wherein said high purity semiconductor filler material has an oxide coating thereon of from about at least about 5 Angstroms thickness up to about 1000 Angstroms thickness to enhance the adhesion of said resin to said filler.

Claim 15

The improved integrated circuit package of claim 11 wherein said single crystal semiconductor material has an oxide coating thereon of from 50 to 500 Angstroms to provide an insulating layer over said single crystal semiconductor particles.

Claim 16

An improved integrated circuit package having enhanced thermal conductivity and low alpha particle emission comprising an integrated circuit die encapsulated by from at least about 20 mils (about 509 microns) to about 300 mils (about 7634 microns) of an encapsulation resin having from about 68 to about 72 wt.% of 20-100 micron particles of a high purity single crystal doped silicon semiconductor filler material coated with from about 5 to 1000 Angstroms of oxide.

Claim 17

An improved integrated circuit package having enhanced thermal conductivity and low alpha particle emission comprising an integrated circuit die encapsulated by from at least about 20 mils (about 509 microns) to about 300 mils (about 7634 microns) of an encapsulation resin having from about 68 to about 72 wt.% of 20-100 micron particles of a high purity single crystal doped silicon semiconductor filler material coated with from about 5 to 1000 Angstroms of oxide.

Claim 18

The improved integrated circuit package of claim 14 wherein said high purity single crystal doped silicon semiconductor material is doped with from about 1×10 15 to about 1×10 20 atoms/cm 3 of a dopant to enhance the thermal conductivity of said semiconductor filler material.

Claim 19

The improved integrated circuit package of claim 15 wherein said high purity single crystal doped silicon semiconductor material is doped with a Group IIIA-VA element selected from the class of boron, phosphorus, and arsenic to enhance the thermal conductivity of said filler material.

Claim 20

An improved molding compound having enhanced thermal conductivity comprising a molding resin and a high purity doped semiconductor filler material.

Claim 21

An improved molding compound having enhanced thermal conductivity comprising a molding resin and a high purity doped semiconductor filler material.

Claim 22

The improved molding compound of claim 17 wherein said high purity doped semiconductor filler material consists essentially of single crystal silicon semiconductor material having a purity of from at least less than 10 -15 up to less than 10 -18 parts of naturally occurring impurities and doped with from about 1×10 15 to about 1 ×10 20 atoms/cm 3 of a dopant to enhance the thermal conductivity of said semiconductor filler material.

Claim 23

The improved molding compound of claim 18 wherein said high purity single crystal doped silicon semiconductor material is doped with a Group IIIA-VA element selected from the class of boron, phosphorus, and arsenic to enhance the thermal conductivity of said filler material.

Claim 24

The improved molding compound of claim 18 wherein said high purity doped single crystal silicon filler material has an oxide coating thereon of from 5 Angstroms thickness up to about 1 micron thickness.

Claim 25

An improved integrated circuit package comprising an integrated circuit die encapsulated in from at least about 10 mils (about 509 microns) to about 300 mils (about 7634 microns) of an encapsulation resin characterized by enhanced thermal conductivity and low alpha particle emission and having particles of a high purity semiconductor filler material therein selected from the class consisting of arsenic, boron, gallium, germanium, phosphorus, aND silicon; said high purity semiconductor filler material having a purity of from at least less than 10 -15 up to less than 10 -18 parts of naturally occurring impurities therein to provide said enhanced thermal conductivity and low alpha particle emission, and being further coated with from 5 to 100 Angstroms of oxide on the surface thereof to promote bonding of said high purity semiconductor filler particles to the encapsulation resin and to provide electrical insulation between the particles.

Claim 26

An improved integrated circuit package comprising an integrated circuit die encapsulated in from at least about 10 mils (about 509 microns) to about 300 mils (about 7634 microns) of an encapsulation resin characterized by enhanced thermal conductivity and low alpha particle emission and having particles of a high purity semiconductor filler material therein selected from the class consisting of arsenic, boron, gallium, germanium, phosphorus, aND silicon; said high purity semiconductor filler material having a purity of from at least less than 10 -15 up to less than 10 -18 parts of naturally occurring impurities therein to provide said enhanced thermal conductivity and low alpha particle emission, and being further coated with from 5 to 100 Angstroms of oxide on the surface thereof to promote bonding of said high purity semiconductor filler particles to the encapsulation resin and to provide electrical insulation between the particles.

Claim 27

The integrated circuit package of claim 21 wherein said oxide coating thereon comprises a thermal oxide coating formed by heating said semiconductor particles in an oxidizing atmosphere.

Claim 28

An improved integrated circuit package comprising an integrated circuit die encapsulated in from at least about 20 mils (about 509 microns) to about 300 mils (about 7634 microns) of an encapsulation resin characterized by enhanced thermal conductivity and low alpha particle emission and having particles of a high purity silicon filler material therein; said high purity silicon filler material having a purity of from at least less than 10 -15 up to less than 10 -18 parts of naturally occurring impurities therein to provide said low alpha particle emission and further being doped with from about 10 15 to about 10 20 atoms/cm 3 of one or more dopants selected from the class consisting of arsenic, boron, and phosphorus to provided said enhanced thermal conductivity.

Claim 29

An improved integrated circuit package comprising an integrated circuit die encapsulated in from at least about 20 mils (about 509 microns) to about 300 mils (about 7634 microns) of an encapsulation resin characterized by enhanced thermal conductivity and low alpha particle emission and having particles of a high purity silicon filler material therein; said high purity silicon filler material having a purity of from at least less than 10 -15 up to less than 10 -18 parts of naturally occurring impurities therein to provide said low alpha particle emission and further being doped with from about 10 15 to about 10 20 atoms/cm 3 of one or more dopants selected from the class consisting of arsenic, boron, and phosphorus to provided said enhanced thermal conductivity.

Claim 30

The integrated circuit package of claim 23 wherein each of said silicon particles is coated with from 5 to 1000 Angstroms of oxide on the surface thereof to promote bonding to said high purity silicon filler particles to the encapsulation resin and to provide electrical insulation between the particles.