US4929994A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state imaging device with multiple dielectric layers
Assignee: Olympus Corp
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Filing: 1988-04-04
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Granted: 1990-05-29
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Expires: 2008-04-04
Abstract
Abstract A solid-state imaging device uses an MIS light-receiving device having a multilayer film structure. The multilayer film structure is constituted in such a manner that intermediate films are interposed between a gate electrode disposed on a surface of a semiconductor with a gate insulating film therebetween. A protection film is formed above the gate electrode, and/or between the gate electrode and the gate insulating film. Each intermediate film has a refractive index of a value between those of the materials forming the above components. As a result of the thus-constituted multilayer film structure, light transmissivity can be improved, causing a reduction in deterioration in light sensitivity. Consequently, a solid-state imaging device, which has a highly sensitive MIS light-receiving device, can be obtained.
Inventors
- 👤 Kazuya Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:48
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
164 words
A solid-state imaging device using an MIS light-receiving device which includes a photoelectrical conversion portion and a signal storage portion, said solid-state imaging device comprising: a gate electrode disposed on a surface of a semiconductor with a gate insulating film, formed of SiO 2 , therebetween, said gate electrode formed of a polysilicon film having a thickness of 600 Å; a protection film formed on said gate electrode formed of SiO 2 ; a first intermediate film disposed between said gate electrode and said protection film, and said first intermediate film formed of a Si 3 N 4 film having a thickness of 600 Å; and a second intermediate film disposed between said gate electrode and said gate insulating film, and said second intermediate film formed of a Si 3 N 4 film having a thickness of 900 Å wherein the thickness of each said film of said solid-state imaging device reduces a level of reflection between said films to enable maximum light transmissivity.
Claim 2
Dependent Claim
164 words
A solid-state imaging device using an MIS light-receiving device which includes a photoelectrical conversion portion and a signal storage portion, said solid-state imaging device comprising: a gate electrode disposed on a surface of a semiconductor with a gate insulating film, formed of SiO 2 , therebetween, said gate electrode formed of a polysilicon film having a thickness of 600 Å; a protection film formed on said gate electrode formed of SiO 2 ; a first intermediate film disposed between said gate electrode and said protection film, and said first intermediate film formed of a Si 3 N 4 film having a thickness of 600 Å; and a second intermediate film disposed between said gate electrode and said gate insulating film, and said second intermediate film formed of a Si 3 N 4 film having a thickness of 900 Å wherein the thickness of each said film of said solid-state imaging device reduces a level of reflection between said films to enable maximum light transmissivity.
Claim 3
Dependent Claim
132 words
A solid-state imaging device using an MIS light-receiving device which includes a photoelectrical conversion portion and a signal storage portion, said solid-state imaging device comprising: a gate electrode disposed on a surface of a semiconductor with a gate insulating film, formed of SiO 2 , therebetween, said gate electrode formed of a polysilicon film having a thickness of 600 Å; a protection film formed on said gate electrode, said protection film formed of SiO 2 ; and an intermediate film disposed between said gate electrode and said protection film, and said intermediate film formed of a Si 3 N 4 film having a thickness of 650 Å wherein the thickness of each said film of said solid-state imaging device reduces a level of reflection between said films to enable maximum light transmissivity.
Claim 4
Dependent Claim
132 words
A solid-state imaging device using an MIS light-receiving device which includes a photoelectrical conversion portion and a signal storage portion, said solid-state imaging device comprising: a gate electrode disposed on a surface of a semiconductor with a gate insulating film, formed of SiO 2 , therebetween, said gate electrode formed of a polysilicon film having a thickness of 600 Å; a protection film formed on said gate electrode, said protection film formed of SiO 2 ; and an intermediate film disposed between said gate electrode and said protection film, and said intermediate film formed of a Si 3 N 4 film having a thickness of 650 Å wherein the thickness of each said film of said solid-state imaging device reduces a level of reflection between said films to enable maximum light transmissivity.
Claim 5
Dependent Claim
134 words
A solid-state imaging device using an MIS light-receiving device which includes a photoelectrical conversion portion and a signal storage portion, said solid-state imaging device comprising: a gate electrode disposed on a surface of a semiconductor with a gate insulating film, formed of SiO 2 , therebetween said gate electrode formed of a polysilicon film having a thickness of 650 Å; a protection film of SiO 2 formed on said gate electrode; and an intermediate film disposed between said gate electrode and said gate insulating film, and said intermediate film formed of a Si 3 N 4 film having a thickness within a range from 600 Å to 900 Å wherein the thickness of each said film of said solid-state imaging device reduces a level of reflection between said films to enable maximum light transmissivity.
Claim 6
Dependent Claim
134 words
A solid-state imaging device using an MIS light-receiving device which includes a photoelectrical conversion portion and a signal storage portion, said solid-state imaging device comprising: a gate electrode disposed on a surface of a semiconductor with a gate insulating film, formed of SiO 2 , therebetween said gate electrode formed of a polysilicon film having a thickness of 650 Å; a protection film of SiO 2 formed on said gate electrode; and an intermediate film disposed between said gate electrode and said gate insulating film, and said intermediate film formed of a Si 3 N 4 film having a thickness within a range from 600 Å to 900 Å wherein the thickness of each said film of said solid-state imaging device reduces a level of reflection between said films to enable maximum light transmissivity.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-28 | 1993-11-27 | 1994-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-28 | 1997-11-27 | 1998-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-28 | 2001-11-27 | 2002-05-29 | $7700.00 | Window Closed / Lapsed |