Circuit protection device

Claim 2

An integrated circuit chip package which comprises (1) a lead frame; (2) an integrated circuit chip protected by a cavity cover comprising an electrode; and (3) a threshold switching device for protecting the integrated circuit from a voltage transient, the switching device including a switching element formed from an amorphous composition comprising: (a) 15 to 75 atomic % selenium; (b) 10 to 65 atomic % arsenic; and (c) 5 to 42 atomic % germanium, or if the composition contains less that 35 atomic % selenium, 5 to 35 atomic % germanium; in which the proportions of (a), (b) and (c) (based on the total of (a), (b) and (c)) add up to 100%; the composition having not more than 10 atomic % tellurium; and the electrode being connectable to earth and an internal surface of the electrode being connectable to the composition and the chip being connected to the lead frame by wire bonds, the wire bonds being such that they contact said composition.

Claim 3

An integrated circuit chip package which comprises (1) a chip carrier having first conductive pads which can be wire bonded to conductive pads of an integrated circuit chip; (2) a threshold switching device for protecting the integrated circuit from a voltage transient, the switching device including a switching element formed from an amorphous composition comprising: (a) 15 to 75 atomic % selenium; (b) 10 to 65 atomic % arsenic; and (c) 5 to 42 atomic % germanium, or if the composition contains less that 35 atomic % selenium, 5 to 35 atomic % germanium; in which the proportions of (a), (b) and (c) (based on the total of (a), (b) and (c) add up to 100%; the composition having not more than 10 atomic % tellurium; and said composition being connected between (i) the first conductive pads of the carrier and an electrode layer which can be connected to earth; the device being provided by a frame having electrode patterns on opposing surfaces each of which matches a pattern of electrodes on the chip carrier, one face contacting the chip carrier electrodes, the patterns on opposing faces being interconnected by a conductive channel of the frame, the device being built up at the electrode pattern at a face of the frame opposite to that which contacts the chip carrier electrodes.

Claim 4

An integrated circuit chip package which comprises (1) a chip carrier having first conductive pads which can be wire bonded to conductive pads of an integrated circuit chip; (2) a threshold switching device for protecting the integrated circuit from a voltage transient, the switching device including a switching element formed from an amorphous composition comprising: (a) 15 to 75 atomic % selenium; (b) 10 to 65 atomic % arsenic; and (c) 5 to 42 atomic % germanium, or if the composition contains less that 35 atomic % selenium, 5 to 35 atomic % germanium; in which the proportions of (a), (b) and (c) (based on the total of (a), (b) and (c) add up to 100%; the composition having not more than 10 atomic % tellurium; and said composition being connected between (i) the first conductive pads of the carrier and an electrode layer which can be connected to earth; the device being provided by a frame having electrode patterns on opposing surfaces each of which matches a pattern of electrodes on the chip carrier, one face contacting the chip carrier electrodes, the patterns on opposing faces being interconnected by a conductive channel of the frame, the device being built up at the electrode pattern at a face of the frame opposite to that which contacts the chip carrier electrodes.

Claim 5

A package according to claim 2, in which the frame incorporates a capacitor.

Claim 6

An integrated circuit chip package which includes a threshold switching device for protecting the integrated circuit from a voltage transient, the switching device including a switching element formed from an amorphous composition comprising: (a) 15 to 75 atomic % selenium; (b) 10 to 65 atomic % arsenic; and (c) 5 to 42 atomic % germanium, or, if the composition contains less that 35 atomic % selenium, 5 to 35 atomic % germanium; in which the proportions of (a), (b) and (c) (based on the total of (a), (b) and (c) add up to 100%; the composition having not more than 10 atomic % tellurium; the package comprising: (a) a semiconductor comprising: (i) a source area and source contact; (ii) a drain area and drain contact; (iii) a gate between the source area and drain area and a gate contact; (b) the composition deposited across the gate contact and the drain contact; and (c) a conductive metal electrode layer deposited across said composition and onto the drain contact to contact the drain contact directly.

Claim 7

An integrated circuit chip package which includes a threshold switching device for protecting the integrated circuit from a voltage transient, the switching device including a switching element formed from an amorphous composition comprising: (a) 15 to 75 atomic % selenium; (b) 10 to 65 atomic % arsenic; and (c) 5 to 42 atomic % germanium, or, if the composition contains less that 35 atomic % selenium, 5 to 35 atomic % germanium; in which the proportions of (a), (b) and (c) (based on the total of (a), (b) and (c) add up to 100%; the composition having not more than 10 atomic % tellurium; the package comprising: (a) a semiconductor comprising: (i) a source area and source contact; (ii) a drain area and drain contact; (iii) a gate between the source area and drain area and a gate contact; (b) the composition deposited across the gate contact and the drain contact; and (c) a conductive metal electrode layer deposited across said composition and onto the drain contact to contact the drain contact directly.