US4927771A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of thermal isolation of detector elements in an uncooled staring focal plane array
Assignee: United States Department of the Army
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Filing: 1989-03-07
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Granted: 1990-05-22
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Expires: 2009-03-07
Abstract
Abstract A method of thermally isolating detector elements in an uncooled focal pl array. A backfill material of arsenic trisulfide is deposited inside reticulated grooves in a detector material to provide strength prior to the step of bump bonding the detector elements of the detector material to a readout device array. After the bump bonding step, an oxygen rich gas, such as a dry oxygen and nitrogen mixture, is flowed between the detector and readout arrays to remove the arsenic trisulfide material therefrom leaving an air gap between the detector elements.
Inventors
- 👤 Donald A. Ferrett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:29
CPC Classifications
H; H10; H10N; H10N15/00; H10N15/10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/157; H10F39/1575; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
313 words
A method of thermally isolating detector elements in an uncooled staring focal plane array, said method comprising the steps of: providing an unthinned wafer of detector material; reticulating said wafer to form reticulated grooves and isolated detector elements; backfilling said reticulated grooves by evaporating arsenic trisulfide as removable backfill material therein until said reticulated grooves are filled to overflow to strengthen the reticulated wafer; cleaning excess backfill material down to the top of said detector elements; evaporating a top electrode layer over the surface formed by said backfill material and said top of said detector elements; evaporating an absorber layer over said top electrode layer; inverting said unthinned wafer of detector material and mounting on a layer of support material; thinning said unthinned wafer to a final thickness wherein said backfill material is exposed forming isolated detector elements; depositing a metal pad and solder bump sequentially on each of said isolated detector elements wherein the temperature of deposition never exceeds 170 degrees Celsius to prevent thermal sublimation of said arsenic trisulfide removable backfill material; bump bonding a readout device to each of said solder bumps; inverting said readout device and the thinned wafer and removing said layer of support material from said absorber layer; and jetting an oxygen rich gas between the detector array and said readout device in the open space formed around the bump bonds to remove said arsenic trisulfide removable backfill material from said reticulated grooves wherein said bonded detector array and readout device are fixed on a rotating stage in an enclosure and a nozzle jetting said oxygen rich gas is stationary so that said gas is jetted through the open space from all directions as the array and device are rotated wherein said oxygen rich gas sublimates and carries away the arsenic trisulfide out of said reticulated grooves to leave thermal isolation air gaps between said detector elements.
Claim 2
Independent Claim
313 words
A method of thermally isolating detector elements in an uncooled staring focal plane array, said method comprising the steps of: providing an unthinned wafer of detector material; reticulating said wafer to form reticulated grooves and isolated detector elements; backfilling said reticulated grooves by evaporating arsenic trisulfide as removable backfill material therein until said reticulated grooves are filled to overflow to strengthen the reticulated wafer; cleaning excess backfill material down to the top of said detector elements; evaporating a top electrode layer over the surface formed by said backfill material and said top of said detector elements; evaporating an absorber layer over said top electrode layer; inverting said unthinned wafer of detector material and mounting on a layer of support material; thinning said unthinned wafer to a final thickness wherein said backfill material is exposed forming isolated detector elements; depositing a metal pad and solder bump sequentially on each of said isolated detector elements wherein the temperature of deposition never exceeds 170 degrees Celsius to prevent thermal sublimation of said arsenic trisulfide removable backfill material; bump bonding a readout device to each of said solder bumps; inverting said readout device and the thinned wafer and removing said layer of support material from said absorber layer; and jetting an oxygen rich gas between the detector array and said readout device in the open space formed around the bump bonds to remove said arsenic trisulfide removable backfill material from said reticulated grooves wherein said bonded detector array and readout device are fixed on a rotating stage in an enclosure and a nozzle jetting said oxygen rich gas is stationary so that said gas is jetted through the open space from all directions as the array and device are rotated wherein said oxygen rich gas sublimates and carries away the arsenic trisulfide out of said reticulated grooves to leave thermal isolation air gaps between said detector elements.
Claim 3
Dependent Claim
25 words
A method as set forth in claim 1 wherein said step of providing unthinned wafer of detector material is providing a single crystal pyroelectric material.
Claim 4
Dependent Claim
18 words
A method as set forth in claim 2 wherein said step of reticulating is by ion beam milling.
Claim 5
Dependent Claim
45 words
A method as set forth in claim 3 wherein said step of cleaning excess backfill material is in two steps wherein a first step is polishing and a second step is by ion milling said arsenic trisulfide down to the tops of said detector elements.
Claim 6
Dependent Claim
32 words
A method as set forth in claim 4 wherein said step of mounting said unthinned wafer of detector material on said layer of support material is by mounting on a glass blank.
Claim 7
Dependent Claim
22 words
A method as set forth in claim 5 wherein said step of thinning said unthinned wafer is by polishing and ion milling.
Claim 8
Dependent Claim
61 words
A method as set forth in claim 6 wherein said step of jetting an oxygen rich gas is jetting a dry oxygen and nitrogen mixture at a temperature greater than 200 degrees Celsius to facilitate oxidation of said arsenic trisulfide and at a flow rate about 2 liters or more per minute while exhaust gases are continuously removed from said enclosure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-21 | 1993-11-20 | 1994-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-21 | 1997-11-20 | 1998-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-21 | 2001-11-20 | 2002-05-22 | $7700.00 | Window Closed / Lapsed |