Grown crystalline sensor and method for sensing

Claim 2

A sensor for determining the concentration of a gaseous component of interest comprising a sensing element comprising an inorganic oxide composition and an inorganic crystalline composition including at least one metal component in an amount effective to provide a light signal at least one property of which varies as the concentration of the gaseous component of interest varies, said inorganic crystalline composition having been grown, or derived from a material grown, by crystal growth upon at least a portion of the surface of said inorganic oxide composition to form a composite with at least two substantially contiguous phases which exhibit at least one of a distinct compositional heterogeneity and a distinct structural heterogeneity of one phase to the other; and processing means to process said signal and provide a basis for determining the concentration of said gaseous component of interest.

Claim 3

The sensor of claim 1 wherein said property is selected from the group consisting of the intensity of said light signal, the decay rate of said light signal and the lifetime of said light signal.

Claim 4

The sensor of claim 1 wherein said inorganic crystalline composition comprises a molecular sieve selected for the group consisting of zeolitic molecular sieves, silica, molecular sieves, non-zeolitic molecular sieves, and mixtures thereof.

Claim 5

The sensor of claim 1 wherein said inorganic crystalline composition comprises a silica molecular sieve selected from the group consisting of silicalite, silicalite II, fluoride silicalite and mixtures thereof.

Claim 6

The sensor of claim 1 wherein said inorganic crystalline composition comprises at least one non-zeolitic molecular sieve having an empirical chemical composition on an anhydrous basis expressed by the formula I: mR(Q.sub.w Al.sub.x P.sub.y Si.sub.z)O.sub.2 (I) where "Q" represents (a) at least one element present as a framework oxide unit "QO 2 n " with charge "n" where "n" may be -3, -2, -1, 0 or +1; (i) a mean "T-O" distance in tetrahedral oxide structure between about 1.51 Å and about 2.06 Å (ii) a cation electronegativity between about 125 kcal/gm-atom to about 310 kcal/gm-atom and (iii) the capability of forming stable Q-O-P, Q-O-Al or Q-O-Q bonds in crystalline three dimensional oxide structures having a "Q-O" bond dissociation energy greater than about 59 kcal/gm-atom at 298° K.; "R" represents at least one organic templating agent present in the intracrystalline pore system; "m" represents the molar amount of "R" present per mole of (Q w Al x P y Si z )O 2 and has a value from zero to about 0.3; and "w", "x", "y" and "z" represent the mole fractions of QO 2 n , AlO 2 - , PO 2 + , SiO 2 , respectfully, present as framework oxide units; and the mole fractions of "Q"; aluminum, phosphorus and silicon, respectively, present as framework oxides said mole fractions being within the following limiting compositional values: w is equal to 0 to 98 mole percent; y is equal to 1 to 99 mole percent; x is equal to 1 to 99 mole percent, and z is equal to 0 to 98 mole percent.

Claim 7

The sensor of claim 5 wherein said non-zeolitic molecular sieve is selected from the group consisting of AlPO 4 , SAPO, MeAPO, MeAPSO, ELAPO, and ELAPSO molecular sieves and mixtures thereof.

Claim 8

The sensor of claim 5 wherein said non-zeolitic molecular sieve is selected from the group consisting of MnAPSO and MnAPO molecular sieves and mixtures thereof.

Claim 9

The sensor of claim 1 wherein said metal component is selected from the group consisting of Group IIB metals, Group III metals, Group VI metals, Group V metals, Group VI metals, Group VII metals, Group VIII metals, the rare earth metals and mixtures thereof.

Claim 10

The sensor of claim 1 wherein said metal component is selected form the group consisting of manganese, silver, europium (3+) and mixtures thereof.

Claim 11

The sensor of claim 1 wherein said inorganic oxide composition is an oxide selected from the group consisting of silica, alumina, titania, germania, zirconia, magnesia, gallia and mixtures thereof.

Claim 12

The sensor of claim 1 wherein said composition further includes an electrically conducting or semiconducting substrate having a surface such that said inorganic oxide composition is in proximity to at least a portion of said surface of said substrate.

Claim 13

The sensor of claim 8 wherein said substrate includes a material selected from the group consisting of silicon, aluminum, copper, gold, silver, platinum, gallium molybdenum, gallium arsenide, gallium phosphide and mixtures thereof.

Claim 14

A sensor for determining the concentration of a gaseous component of interest comprising a sensing element comprising an optical fiber and an organic crystalline composition including at least one metal component in an amount effective to provide a signal related to the concentration of said gaseous component of interest, said inorganic crystalline composition having been grown, or derived from a material grown, by crystal growth upon at least a portion of the optical surface of an said optical fiber to form a composite with at least two substantially contiguous phases which exhibit at least one of a distinct compositional heterogeneity and a distinct structural heterogeneity of one phase to the other; and processing means to process said signal and provide a basis for determining the concentration of said gaseous component of interest.

Claim 15

A sensor for determining the concentration of a gaseous component of interest comprising a sensing element comprising an optical fiber and an organic crystalline composition including at least one metal component in an amount effective to provide a signal related to the concentration of said gaseous component of interest, said inorganic crystalline composition having been grown, or derived from a material grown, by crystal growth upon at least a portion of the optical surface of an said optical fiber to form a composite with at least two substantially contiguous phases which exhibit at least one of a distinct compositional heterogeneity and a distinct structural heterogeneity of one phase to the other; and processing means to process said signal and provide a basis for determining the concentration of said gaseous component of interest.

Claim 16

The sensor of claim 13 wherein said optical fiber acts to transmit said signal from said sensing element.

Claim 17

The sensor of claim 13 which further comprises excitation means acting to provide an excitation signal to said sensing element and thereby cause said metal component to provide said signal.

Claim 18

The sensor of claim 14 which further comprises excitation means acting to provide an excitation signal to said sensing element and thereby cause said metal component to provide said signal.

Claim 19

The sensor of claim 16 wherein said optical fiber acts to transmit said excitation signal to said sensing element.

Claim 20

The sensor of claim 13 wherein said optical surface of said optical fiber includes an inorganic oxide composition.

Claim 21

The sensor of claim 13 wherein said metal component is an integral part of said inorganic crystalline composition.

Claim 22

The sensor of claim 13 wherein said metal component is chemically bonded to said inorganic crystalline composition.

Claim 23

The sensor of claim 13 wherein said signal is a light signal at least one property of which varies as the concentration of the gaseous component of interest varies.

Claim 24

The sensor of claim 21 wherein said property is selected from the group consisting of the intensity of said light signal, the decay rate of said light signal and the lifetime of said light signal.

Claim 25

The sensor of claim 13 wherein said inorganic crystalline composition comprises a molecular sieve selected for the group consisting of zeolitic molecular sieves, silica molecular sieves, non-zeolitic molecular sieves and mixtures thereof.

Claim 26

The sensor of claim 13 wherein said inorganic crystalline composition includes at least one organic templating agent.

Claim 27

The sensor of claim 13 wherein said inorganic crystalline composition is substantially free of any organic templating agent.

Claim 28

The sensor of claim 13 wherein said inorganic crystalline composition comprises a zeolitic molecular sieve selected from the group consisting of A-type zeolitic molecular sieves, X-type zeolitic molecular sieves, Y-type zeolitic molecular sieves, L-type zeolitic molecular sieves, F-type zeolitic molecular sieves, W-type zeolitic molecular sieves, LZ-202, LZ-210, LZ-105 and mixtures thereof.

Claim 29

The sensor of claim 13 wherein said inorganic crystalline composition comprises a zeolitic molecular sieve selected from the group consisting of ZSM-5, ZSM-11, ZSM-12, ZSM-20, ZSM-34, omega zeolite, beta zeolite and mixtures thereof.

Claim 30

The sensor of claim 13 wherein said inorganic crystalline composition comprises a silica molecular sieve selected from the group consisting of silicalite, fluoride silicalite and mixtures thereof.

Claim 31

The sensor of claim 13 wherein said inorganic crystalline composition comprises at least one non-zeolitic molecular sieve having an empirical chemical composition on an anhydrous basis expressed by the formula I: mR(Q.sub.w Al.sub.x P.sub.y Si.sub.z)O.sub.2 (I) where "Q" represents (a) at least one element present as a framework oxide unit "QO 2 n " with charge "n" where "n" may be -3, -2, -1, 0 or +1; (i) a mean "T-O" distance in tetrahedral oxide structure between about 1.51 Å and about 2.06 Å (ii) a cation electronegativity between about 125 kcal/gm-atom to about 310 kcal/gm-atom and (iii) the capability of forming stable Q-O-P, Q-O-Al or Q-O-Q bonds in crystalline three dimensional oxide structures having a "Q-O" bond dissociation energy greater than about 59 kcal/gm-atom at 298° K.; "R" represents at least one organic templating agent present in the intracrystalline pore system; "m" represents the molar amount of "R" present per mole of (Q w Al x P y Si z )O 2 and has a value from zero to about 0.3; and "w", "x", "y" and "z" represent the mole fractions of QO 2 n , AlO 2 - , PO 2 + , SiO 2 , respectfully, present as framework oxide units; and the mole fractions of "Q"; aluminum, phosphorus and silicon, respectively, present as framework oxides said mole fractions being within the following limiting compositional values: w is equal to 0 to 98 mole percent; y is equal to 1 to 99 mole percent; x is equal to 1 to 99 mole percent, and z is equal to 0 to 98 mole percent.

Claim 32

The sensor of claim 29 wherein said non-zeolitic molecular sieve is selected from the group consisting of AlPO 4 , SAPO, MeAPO, MeAPSO, ELAPO, and ELAPSO molecular sieves and mixtures thereof.

Claim 33

The sensor of claim 29 wherein said non-zeolitic molecular sieve is selected from the group consisting of MnAPSO and MnAPO molecular sieves and mixtures thereof.

Claim 34

The sensor of claim 13 wherein said metal component is selected from the group consisting of Group IIB metals, Group III metals, Group VI metals, Group V metals, Group VI metals, Group VII metals, Group VIII metals, the rare earth metals and mixtures thereof.

Claim 35

The sensor of claim 13 wherein said metal component is selected form the group consisting of manganese, silver, europium (3+) and mixtures thereof.

Claim 38

The method of claim 34 wherein said causing step includes providing an excitation signal to said sensing element.

Claim 39

The method of claim 34 wherein said signal is a light signal at least one property of which varies as the concentration of the gaseous component of interest varies.

Claim 40

The method of claim 36 wherein said property is selected from the group consisting of the intensity of said light signal, the decay rate of said light signal and the lifetime of said light signal.

Claim 41

The method of claim 34 wherein said inorganic crystalline composition comprises a molecular sieve selected for the group consisting of zeolitic molecular sieves, silica molecular sieves, non-zeolitic molecular sieves and mixtures thereof.

Claim 42

The sensor of claim 34 wherein said inorganic crystalline composition includes at least one organic templating agent.

Claim 43

The sensor of claim 34 wherein said inorganic crystalline composition is substantially free of any organic templating agent.

Claim 44

The sensor of claim 34 wherein said inorganic crystalline composition comprises a zeolitic molecular sieve selected from the group consisting of A-type zeolitic molecular sieves, X-type zeolitic molecular sieves, Y-type zeolitic molecular sieves, L-type zeolitic molecular sieves, F-type zeolitic molecular sieves, W-type zeolitic molecular sieves, LZ-202, LZ-210, LZ-105 and mixtures thereof.

Claim 45

The method of claim 28 wherein said inorganic crystalline composition comprises a silica molecular sieve selected from the group consisting of silicalite, silicalite II, fluoride silicalite and mixtures thereof.

Claim 46

The method of claim 34 wherein said inorganic crystalline composition comprises at least one non-zeolitic molecular sieve having an empirical chemical composition on an anhydrous basis expressed by the formula I: mR(Q.sub.w Al.sub.x P.sub.y Si.sub.z)O.sub.2 (I) where "Q" represents (a) at least one element present as a framework oxide unit "QO 2 n " with charge "n" where "n" may be -3, -2, -1, 0 or +1; (i) a mean "T-O" distance in tetrahedral oxide structure between about 1.51 Å and about 2.06 Å (ii) a cation electronegativity between about 125 kcal/gm-atom to about 310 kcal/gm-atom and (iii) the capability of forming stable Q-O-P, Q-O-Al or Q-O-Q bonds in crystalline three dimensional oxide structures having a "Q-O" bond dissociation energy greater than about 59 kcal/gm-atom at 298° K.; "R" represents at least one organic templating agent present in the intracrystalline pore system; "m" represents the molar amount of "R" present per mole of (Q w Al x P y Si z )O 2 and has a value from zero to about 0.3; and "w", "x", "y" and "z" represent the mole fractions of QO 2 n , AlO 2 - , PO 2 + , SiO 2 , respectfully, present as framework oxide units; and the mole fractions of "Q"; aluminum, phosphorus and silicon, respectively, present as framework oxides said mole fractions being within the following limiting compositional values: w is equal to 0 to 98 mole percent; y is equal to 1 to 99 mole percent; x is equal to 1 to 99 mole percent, and z is equal to 0 to 98 mole percent.

Claim 47

The sensor of claim 43 wherein said non-zeolitic molecular sieve is selected from the group consisting of AlPO 4 , SAPO, MeAPO, MeAPSO, ELAPO, and ELAPSO molecular sieves and mixtures thereof.

Claim 48

The sensor of claim 43 wherein said non-zeolitic molecular sieve is selected from the group consisting of MnAPSO and MnAPO molecular sieves and mixtures thereof.

Claim 49

The method of claim 34 wherein said metal component is selected from the group consisting of Group IA metals, Group II metals, Group III metals, Group VI metals, Group V metals, Group Vl metals, Group VII metals, Group VIII metals, the rare earth metals and mixtures thereof.

Claim 50

The method of claim 34 wherein said metal component is selected form the group consisting of manganese, silver, europium (3+) and mixtures thereof.

Claim 53

The method of claim 48 wherein said causing step includes providing an excitation signal to said sensing element.

Claim 54

The method of claim 49 wherein said excitation signal is transmitted to said sensing element through said optical fiber.

Claim 55

The method of claim 48 wherein said optical surface of said optical fiber includes an inorganic oxide composition.

Claim 56

The method of claim 48 wherein said signal is a light signal at least one property of which varies as the concentration of the gaseous component of interest varies.

Claim 57

The method of claim 48 wherein said property is selected from the group consisting of the intensity of said light signal, the decay rate of said light signal and the lifetime of said light signal.

Claim 58

The method of claim 48 wherein said inorganic crystalline composition comprises a molecular sieve selected for the group consisting of zeolitic molecular sieves, silica molecular sieves, non-zeolitic molecular sieves and mixtures thereof.

Claim 59

The sensor of claim 48 wherein said inorganic crystalline composition includes at least one organic templating agent.

Claim 60

The sensor of claim 48 wherein said inorganic crystalline composition is substantially free of any organic templating agent.

Claim 61

The sensor of claim 48 wherein said inorganic crystalline composition comprises a zeolitic molecular sieve selected from the group consisting of A-type zeolitic molecular sieves, X-type zeolitic molecular sieves, Y-type zeolitic molecular sieves, L-type zeolitic molecular sieves, F-type zeolitic molecular sieves, W-type zeolitic molecular sieves, LZ-202, LZ-210, LZ-105 and mixtures thereof.

Claim 62

The sensor of claim 48 wherein said inorganic crystalline composition comprises a zeolitic molecular sieve selected from the group consisting of ZSM-5, ZSM-11, ZSM-12, ZSM-20, ZSM-34, omega zeolite, beta zeolite and mixtures thereof.

Claim 63

The method of claim 48 wherein said inorganic crystalline composition comprises a silica molecular sieve selected from the group consisting of silicalite, silicalite II, fluoride silicalite and mixtures thereof.

Claim 64

The method of claim 48 wherein said inorganic crystalline composition comprises at least one non-zeolitic molecular sieve having an empirical chemical composition on an anhydrous basis expressed by the formula I: mR(Q.sub.w Al.sub.x P.sub.y Si.sub.z)O.sub.2 (I) where "Q" represents (a) at least one element present as a framework oxide unit "QO 2 n " with charge "n" where "n" may be -3, -2, -1, 0 or +1; (i) a mean "T-O" distance in tetrahedral oxide structure between about 1.51 Å and about 2.06 Å (ii) a cation electronegativity between about 125 kcal/gm-atom to about 310 kcal/gm-atom and (iii) the capability of forming stable Q-O-P, Q-O-Al or Q-O-Q bonds in crystalline three dimensional oxide structures having a "Q-O" bond dissociation energy greater than about 59 kcal/gm-atom at 298° K.; "R" represents at least one organic templating agent present in the intracrystalline pore system; "m" represents the molar amount of "R" present per mole of (Q w Al x P y Si z )O 2 and has a value from zero to about 0.3; and "w", "x", "y" and "z" represent the mole fractions of QO 2 n , AlO 2 - , PO 2 + , SiO 2 , respectfully, present as framework oxide units; and the mole fractions of "Q"; aluminum, phosphorus and silicon, respectively, present as framework oxides said mole fractions being within the following limiting compositional values: w is equal to 0 to 98 mole percent; y is equal to 1 to 99 mole percent; x is equal to 1 to 99 mole percent, and z is equal to 0 to 98 mole percent.

Claim 65

The sensor of claim 60 wherein said non-zeolitic molecular sieve is selected from the group consisting of AlPO 4 , SAPO, MeAPO, MeAPSO, ELAPO, and ELAPSO molecular sieves and mixtures thereof.

Claim 66

The sensor of claim 60 wherein said non-zeolitic molecular sieve is selected from the group consisting of MnAPSO and MnAPO molecular sieves and mixtures thereof.

Claim 67

The method of claim 48 wherein said metal component is selected from the group consisting of Group IIB metals, Group III metals, Group VI metals, Group V metals, Group VI metals, Group VII metals, Group VIII metals, the rare earth metals and mixtures thereof.

Claim 68

The method of claim 48 wherein said metal component is selected form the group consisting of manganese, silver, europium (3+) and mixtures thereof.