Semiconductor device and method for producing the same

Claim 2

A semiconductor device comprising a semiconductor substrate having at least one memory element formed therein and a layer for preventing penetration of alpha particles therethrough provided over at least a region of said memory element, said layer consisting essentially of a resin material selected from the group consisting of a polyimide resin and a polyimide isoindoloquinazolinedione, said layer having a thickness of 20 μm or more to sufficiently prevent penetration of alpha particles therethrough which come from outside of the layer and to avoid soft errors in said memory element, and said resin material containing less than 40 ppb of impurities functioning as alpha ray generating sources so that the total amount of the impurities will not generate alpha rays of sufficient intensity to cause soft errors in said memory element.

Claim 3

A semiconductor device according to claim 1, wherein said layer has a thickness of more than 28 μm.

Claim 4

A semiconductor device according to claim 1, wherein said semiconductor substrate is encapsulated in a ceramic package.

Claim 5

A semiconductor device according to claim 1, wherein there is no wiring and no bonding pad on said layer.

Claim 6

A semiconductor device according to claim 1, wherein said layer is provided on at least an active area of said memory element.

Claim 7

A semiconductor device according to claim 1, wherein said layer is provided to cover a major surface and a side wall of said semiconductor substrate.

Claim 8

A semiconductor device according to claim 1, wherein at least one contact hole is provided in said layer.

Claim 9

A semiconductor device comprising a semiconductor substrate having at least one memory element formed therein, a layer having a thickness of 20 μm or more provided over at least a region of said memory element, said layer consisting essentially of a resin material selected from the group consisting of a polyimide resin and a polyimide isoindoloquinazoline resin material containing less than 40 ppb of impurities functioning as alpha ray generating sources, soft errors in said memory element caused by alpha rays from said generating sources being prevented by said layer.

Claim 10

A semiconductor device comprising a semiconductor substrate having at least one memory element formed therein, a layer having a thickness of 20 μm or more provided over at least a region of said memory element, said layer consisting essentially of a resin material selected from the group consisting of a polyimide resin and a polyimide isoindoloquinazoline resin material containing less than 40 ppb of impurities functioning as alpha ray generating sources, soft errors in said memory element caused by alpha rays from said generating sources being prevented by said layer.

Claim 11

An integrated semiconductor memory device comprising a semiconductor substrate having a plurality of memory elements formed therein, a sealing member for sealing the semiconductor substrate and a layer for preventing penetration of alpha particles therethrough interposed between said semiconductor substrate and said sealing member, said layer having no wiring and no bonding pad thereon, said layer consisting essentially of a resin material selected from the group consisting of a polyimide resin and a polyimide isoindoloquinazolinedione, said layer having a thickness of at least 30 μm to sufficiently prevent penetration of alpha particles therethrough which come from outside of the layer and to avoid soft errors in said memory element, and said resin material containing very low concentration of impurities so that the material will not generate alpha rays of sufficient intensity to cause soft error in said memory element, and soft error rate of said memory device is not more than 0.002%/1,000 hours.

Claim 12

An integrated semiconductor memory device comprising a semiconductor substrate having a plurality of memory elements formed therein, a sealing member for sealing the semiconductor substrate and a layer for preventing penetration of alpha particles therethrough interposed between said semiconductor substrate and said sealing member, said layer having no wiring and no bonding pad thereon, said layer consisting essentially of a resin material selected from the group consisting of a polyimide resin and a polyimide isoindoloquinazolinedione, said layer having a thickness of at least 30 μm to sufficiently prevent penetration of alpha particles therethrough which come from outside of the layer and to avoid soft errors in said memory element, and said resin material containing very low concentration of impurities so that the material will not generate alpha rays of sufficient intensity to cause soft error in said memory element, and soft error rate of said memory device is not more than 0.002%/1,000 hours.

Claim 13

An integrated semiconductor memory device according to claim 9, wherein said resin material contains from 0.1 to several ppb of said impurities.

Claim 14

An integrated semiconductor memory device according to claim 9, wherein said layer is provided on an inorganic isulating film disposed on said semiconductor substrate.

Claim 15

A semiconductor device comprising a semiconductor substrate having at least one memory element formed therein and a layer for preventing penetration of alpha particles therethrough provided over at least a region of said memory element, said layer consisting essentially of a resin material selected from the group consisting of a polyimide resin and a polyimide isoindoloquinazolinedione, said layer having no wiring and no bonding pad thereon, said layer having a thickness of at least 30 μm to sufficiently prevent penetration of alpha particles therethrough which come from outside of the layer and to avoid soft errors in said memory element, and said resin material containing from 0.1 to several ppb of impurities functioning as alpha rays generating sources so that the total amount of the impurities will not generate alpha rays of sufficient intensity to cause soft errors in said memory element.

Claim 16

A semiconductor device comprising a semiconductor substrate having at least one memory element formed therein and a layer for preventing penetration of alpha particles therethrough provided over at least a region of said memory element, said layer consisting essentially of a resin material selected from the group consisting of a polyimide resin and a polyimide isoindoloquinazolinedione, said layer having no wiring and no bonding pad thereon, said layer having a thickness of at least 30 μm to sufficiently prevent penetration of alpha particles therethrough which come from outside of the layer and to avoid soft errors in said memory element, and said resin material containing from 0.1 to several ppb of impurities functioning as alpha rays generating sources so that the total amount of the impurities will not generate alpha rays of sufficient intensity to cause soft errors in said memory element.

Claim 17

A semiconductor device according to claim 12, wherein said layer is provided on an inorganic insulating film disposed on said semiconductor substrate.

Claim 18

A semiconductor device according to claim 13, wherein a wiring is provided between said layer and said inorganic insulating film.

Claim 19

A semiconductor device according to claim 13, wherein a bonding pad is provided on said inorganic insulating film.

Claim 20

A semiconductor device according to claim 13, wherein said inorganic insulating film comprising a phosphosilicate glass film.

Claim 21

A semiconductor device according to claim 13, wherein said inorganic insulating film comprises a silicon nitride film.

Claim 22

A semiconductor device according to claim 12, wherein the soft error rate of said memory element is not more than 0.002%/1,000 hours.

Claim 23

A semiconductor device comprising a semiconductor substrate having at least one memory element formed therein and a layer having a thickness of 20 μm or more provided over at least a region of said memory element, said layer consisting essentially of a resin material selected from the group consisting of a polyimide resin and a polyimide isoindoloquinazolinedione, said layer having no wiring and no bonding pad thereon, said layer being interposed between said semiconductor substrate and a sealing member for sealing said semiconductor substrate, and said resin material containing from 0.1 to several ppb of impurities functioning as alpha ray generating sources so that the total amount of the impurities will not generate alpha rays of sufficient intensity to cause soft errors in said memory element.

Claim 24

A semiconductor device comprising a semiconductor substrate having at least one memory element formed therein and a layer having a thickness of 20 μm or more provided over at least a region of said memory element, said layer consisting essentially of a resin material selected from the group consisting of a polyimide resin and a polyimide isoindoloquinazolinedione, said layer having no wiring and no bonding pad thereon, said layer being interposed between said semiconductor substrate and a sealing member for sealing said semiconductor substrate, and said resin material containing from 0.1 to several ppb of impurities functioning as alpha ray generating sources so that the total amount of the impurities will not generate alpha rays of sufficient intensity to cause soft errors in said memory element.

Claim 25

A semiconductor device according to claim 19, wherein said layer is provided on an inorganic insulating film disposed on said semiconductor substrate.

Claim 26

A semiconductor device according to claim 20, wherein a wiring is provided between said layer and said semiconductor substrate.

Claim 27

A semiconductor device according to claim 20, wherein a bonding pad is provided on said inorganic insulating film.

Claim 28

A semiconductor device according to claim 20, wherein said inorganic insulating film comprises a phosphosilicate glass film.

Claim 29

A semiconductor device according to claim 20, wherein said inorganic insulating film comprises a silicon nitride film.

Claim 30

A semiconductor device according to claim 19, wherein said layer has a thickness of at least 30 μm.