Merged trench bipolar-CMOS transistor fabrication process

Claim 2

A transistor structure, comprising: a pair of trench depressions formed in a semiconductor substrate; a heavily doped layer of semiconductor material forming a shell around each said trench depression; an insulating layer formed on sidewalls of each said trench depression, a bottom portion of said trench depressions being defined by said heavily doped layer; a semiconductor material formed in a lower portion of each said trench depression; a bipolar transistor formed within said semiconductor material of one said trench depression; and a FET transistor formed within said semiconductor material of the other said trench depression.

Claim 3

The transistor structure of claim 1, further including a heavily doped contact region formed outside said insulating layer of each said trench depression, and formed in said substrate and in contact with said heavily doped layer.

Claim 4

The transistor structure of claim 1, wherein said bipolar transistor is formed in an area of said substrate comprising no more than about thirty square microns.

Claim 5

The transistor structure of claim 1, further including an NMOS transistor formed within said substrate, and connected to said FET to form a CMOS transistor pair.

Claim 6

The transistor structure of claim 1, further including an NPN transistor formed within the semiconductor material of one said trench depression.

Claim 7

The transistor structure of claim 1, further including a lateral PNP transistor formed within the semiconductor material of one said trench depression.

Claim 8

The transistor structure of claim 1, further including a low resistance silicide surface in between the heavily doped layer of semiconductive material forming the sidewalls of said trench depressions and said insulating layer.

Claim 9

The transistor structure of claim 1, wherein said semiconductor material has a doping concentration less than that of said semiconductor substrate.

Claim 10

A transistor structure adapted for improved electrical operation, comprising: a pair of trench depressions formed in a semiconductor substrate; a heavily doped semiconductor region formed in the sidewalls of each said trench depression, each said heavily doped region having a substantially uniform vertical doping profile so that incremental resistance changes thereof as measured in a vertical direction are substantially uniform; a semiconductor collector material formed within one said trench depression; a semiconductor base region formed within said collector material; a semiconductor emitter region formed within said base region to define a bipolar transistor; a semiconductor material well formed within the other trench depression; a semiconductor source and drain region formed in said semiconductor material well; and a gate insulator and gate conductor formed over said semiconductor material well for defining a field effect transistor.

Claim 11

A transistor structure adapted for improved electrical operation, comprising: a pair of trench depressions formed in a semiconductor substrate; a heavily doped semiconductor region formed in the sidewalls of each said trench depression, each said heavily doped region having a substantially uniform vertical doping profile so that incremental resistance changes thereof as measured in a vertical direction are substantially uniform; a semiconductor collector material formed within one said trench depression; a semiconductor base region formed within said collector material; a semiconductor emitter region formed within said base region to define a bipolar transistor; a semiconductor material well formed within the other trench depression; a semiconductor source and drain region formed in said semiconductor material well; and a gate insulator and gate conductor formed over said semiconductor material well for defining a field effect transistor.

Claim 12

The transistor structure of claim 9, further including an insulating layer defining a sidewall dielectric on each said trench depression.

Claim 13

The transistor semiconductor structure or claim 9, wherein said heavily doped region is constructed so as to form a shell of heavily doped material on the sidewalls and bottom of said trench depression associated with said bipolar transistor.

Claim 14

The transistor structure of claim 11, further including a dielectric formed only on the sidewalls of each said trench depression.

Claim 15

The transistor structure of claim 9, further including a semiconductor resistor formed within said base region, and further including a channel stop providing surface isolation to said resistor.

Claim 16

The transistor structure of claim 9, wherein said collector material and said material well comprise an epitaxial semiconductor material which is laterally isolated from said substrate by an insulating dielectric layer.

Claim 17

The transistor structure of claim 14, wherein said insulating layer is cylindrical shaped.

Claim 18

The transistor structure of claim 9, further including an NMOS transistor formed in said substrate and connected to said field effect transistor to define a CMOS device.

Claim 19

The transistor structure of claim 9, further including a low resistance silicide surface on the heavily doped semiconductor regions formed in the sidewalls of each said trench depression.

Claim 20

The transistor structure of claim 9, wherein said semiconductor collector material and said semiconductor material well have a doping concentration less than that of said semiconductor substrate.

Claim 21

A BICMOS transistor structure, comprising a semiconductor substrate having a pair of trench depressions formed therein; a heavily doped region in the sidewalls and bottom of each said trench depression to provide a low resistance trench depression surface; an insulating dielectric formed on the sidewalls of each said trench depression surface to provide lateral isolation; an epitaxial semiconductor material formed within each said dielectric lined trench depression; a bipolar transistor formed within the epitaxial material of one said trench depression; a MOS transistor of one type adapted for forming a CMOS device formed within the epitaxial material of the other trench depression; a MOS transistor of another type adapted for forming the CMOS device formed within said substrate; and conductors connecting both said MOS transistors to form said CMOS device.

Claim 22

A BICMOS transistor structure, comprising a semiconductor substrate having a pair of trench depressions formed therein; a heavily doped region in the sidewalls and bottom of each said trench depression to provide a low resistance trench depression surface; an insulating dielectric formed on the sidewalls of each said trench depression surface to provide lateral isolation; an epitaxial semiconductor material formed within each said dielectric lined trench depression; a bipolar transistor formed within the epitaxial material of one said trench depression; a MOS transistor of one type adapted for forming a CMOS device formed within the epitaxial material of the other trench depression; a MOS transistor of another type adapted for forming the CMOS device formed within said substrate; and conductors connecting both said MOS transistors to form said CMOS device.

Claim 23

The BICMOS transistor of claim 19, further including a low resistance silicide surface formed in between the heavily doped region in each sidewall of said trench depressions and said insulating dielectric.

Claim 24

The BICMOS transistor of claim 19, wherein said heavily doped region comprises a diffused region with substantially a uniform doping profile along said trench depression sidewalls and bottoms.

Claim 25

The BICMOS transistor of claim 19, wherein said epitaxial semiconductor material has a doping concentration less than that of said semiconductor substrate.

Claim 26

A bipolar and a PMOS transistor structure comprising: a pair of trench depressions formed in a semiconductor substrate; a heavily doped layer of semiconductor material formed as a shell around each of said trench depression; an insulating layer formed on the sidewalls of each said trench depression, a bottom portion of each said trench depression being defined by said heavily doped layer; a semiconductor material well formed in a lower portion of each said trench depression; a bipolar transistor formed in the semiconductor material well of one said trench depression; and a PMOS field effect transistor device formed in the semiconductor material of the other said trench depression.

Claim 27

A bipolar and a PMOS transistor structure comprising: a pair of trench depressions formed in a semiconductor substrate; a heavily doped layer of semiconductor material formed as a shell around each of said trench depression; an insulating layer formed on the sidewalls of each said trench depression, a bottom portion of each said trench depression being defined by said heavily doped layer; a semiconductor material well formed in a lower portion of each said trench depression; a bipolar transistor formed in the semiconductor material well of one said trench depression; and a PMOS field effect transistor device formed in the semiconductor material of the other said trench depression.

Claim 28

The bipolar and PMOS transistor structure of claim 23, wherein the bipolar transistor is a lateral PNP bipolar transistor.