US4920401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bipolar transistors
Assignee: NTT Inc
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Filing: 1985-03-14
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Granted: 1990-04-24
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Expires: 2005-03-14
Abstract
Abstract In a bipolar transistor, around the border line of the surface of a base region formed on a semiconductor substrate is formed a base electrode having a constant width of less than one micron and made of polycrystalline silicon. An island shaped emitter region is formed in the base region and an emitter electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.
Inventors
- 👤 Tetsushi Sakai
- 👤 Yoshizi Kobayasi
- 👤 Hironori Yamauchi
- 👤 Yoshinobu Arita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:51
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/40; H10D10/421; H10P; H10P30/00; H10P30/40; H10P32/00; H10P32/20; H10P32/30; H10P32/302; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P76/00; H10P76/40
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
317 words
A planar type bipolar transistor with a vertical transistor structure comprising: a collector region of a first conductivity type; an insulating layer formed on said collector region and defining an opening to said collector region; a base region formed in said collector region at said opening and having an impurity of a second conductivity type opposite said first conductivity type, said base region having a periphery; a base contact region provided at and contacting the entire periphery of said base region, said base contact region containing an impurity of said second conductivity type in higher concentration than the concentration of impurity in said base region; an emitter region of said first conductivity type disposed as an island in said base region and having an outer peripheral edge portion abutting said base region at an emitter-base junction having a top planar side and circumscribing said emitter region; a base electrode of polycrystalline silicon containing an impurity of said second conductivity type formed in contact with said base contact region and extending onto said insulating layer, said base electrode having an inner peripheral edge portion spaced from and circumscribing said emitter region; an emitter electrode in contact with said emitter region and having an outer peripheral edge portion; and an insulating film covering and contacting at least the inner peripheral edge portion of said base electrode and extending outwardly therefrom onto said base electrode, said insulating film circumscribing and contacting the entire outer peripheral edge portion of said emitter electrode and covering and contacting the top planar side of the emitter-base junction for electrically isolating said base electrode from said emitter electrode; wherein said base electrode contacts said base contact region along a band of constant width, said band having an inner circumference circumscribing said emitter region and spaced from the outer peripheral edge of said emitter region by a constant distance everywhere along the length of the band.
Claim 2
Dependent Claim
317 words
A planar type bipolar transistor with a vertical transistor structure comprising: a collector region of a first conductivity type; an insulating layer formed on said collector region and defining an opening to said collector region; a base region formed in said collector region at said opening and having an impurity of a second conductivity type opposite said first conductivity type, said base region having a periphery; a base contact region provided at and contacting the entire periphery of said base region, said base contact region containing an impurity of said second conductivity type in higher concentration than the concentration of impurity in said base region; an emitter region of said first conductivity type disposed as an island in said base region and having an outer peripheral edge portion abutting said base region at an emitter-base junction having a top planar side and circumscribing said emitter region; a base electrode of polycrystalline silicon containing an impurity of said second conductivity type formed in contact with said base contact region and extending onto said insulating layer, said base electrode having an inner peripheral edge portion spaced from and circumscribing said emitter region; an emitter electrode in contact with said emitter region and having an outer peripheral edge portion; and an insulating film covering and contacting at least the inner peripheral edge portion of said base electrode and extending outwardly therefrom onto said base electrode, said insulating film circumscribing and contacting the entire outer peripheral edge portion of said emitter electrode and covering and contacting the top planar side of the emitter-base junction for electrically isolating said base electrode from said emitter electrode; wherein said base electrode contacts said base contact region along a band of constant width, said band having an inner circumference circumscribing said emitter region and spaced from the outer peripheral edge of said emitter region by a constant distance everywhere along the length of the band.
Claim 3
Dependent Claim
40 words
A bipolar transistor according to claim 1 wherein said insulating layer consists of first and second layers, said first layer being the layer onto which the base electrode extends, said first layer containing an impurity of said second type conductivity.
Claim 4
Dependent Claim
38 words
A bipolar transistor according to claim 1 wherein said insulating film isolating the base and emitter electrodes includes an oxide film materialized by oxidation of the base polycrystalline electrode region that protects the surface of the emitter-base junction.
Claim 5
Dependent Claim
28 words
A bipolar transistor according to claim 1 wherein said emitter electrode is made of polycrystalline silicon containing an impurity of said first conductivity type and metal disposed thereupon.
Claim 6
Dependent Claim
15 words
A bipolar transistor according to claim 1 wherein said collector region comprises N-type monocrystalline silicon.
Claim 7
Dependent Claim
59 words
A bipolar transistor according to claim 1 wherein said insulating layer is provided with another opening and includes: a collector-complementing region containing an impurity of said first conductivity type in said higher concentration and extending from underneath said collector region to said other opening; and a collector electrode in contact with said collector complementing region through said other opening.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-23 | 1993-10-23 | 1994-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-23 | 1997-10-23 | 1998-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-23 | 2001-10-23 | 2002-04-24 | $7700.00 | Window Closed / Lapsed |