US4910571A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical semiconductor device
Assignee: NEC Corp
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Filing: 1988-04-21
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Granted: 1990-03-20
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Expires: 2008-04-21
Abstract
Abstract An optical semiconductor device comprises cathode and anode regions, and a gate region having a forbidden band gap narrower than those of the cathode and anode regions. The gate region is sandwiched by the cathode and anode regions. The optical semiconductor device further comprises a plurality of windows for receiving and radiating lights so that the alignment of light axes can be easily performed for a plurality of input and output lights.
Inventors
- 👤 Kenichi Kasahara
- 👤 Yoshiharu Tashiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:12
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/39; G11C7/00; G11C7/005; H10F; H10F55/00; H10F55/18; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
136 words
An optical semiconductor device comprising: a cathode region formed by an n-semiconductor layer, an anode region formed by a p-semiconductor layer, a gate region and an active region sandwiched between said cathode region and said anode region, an n-electrode provided on the side of said cathode region, and a p-electrode provided on the side of said anode region, wherein a forbidden band gap of said gate region is narrower than that of said cathode region and said anode region, one of said cathode region and said anode region is divided into plural regions, while said gate region and said active region are common to said plural regions, and one oof said n-electrode and said p-electrode is divided into plural electrodes correspondingly to said plural regions of said one of said cathode region and said anode region.
Claim 2
Dependent Claim
136 words
An optical semiconductor device comprising: a cathode region formed by an n-semiconductor layer, an anode region formed by a p-semiconductor layer, a gate region and an active region sandwiched between said cathode region and said anode region, an n-electrode provided on the side of said cathode region, and a p-electrode provided on the side of said anode region, wherein a forbidden band gap of said gate region is narrower than that of said cathode region and said anode region, one of said cathode region and said anode region is divided into plural regions, while said gate region and said active region are common to said plural regions, and one oof said n-electrode and said p-electrode is divided into plural electrodes correspondingly to said plural regions of said one of said cathode region and said anode region.
Claim 3
Dependent Claim
76 words
An optical semiconductor device according to claim 1, wherein a light output is obtained in a limited region of said active region in accordance with a voltage applied across an electrode selected from said plural electrodes of said one of said n-electrode and said p-electrode and the other one of said n-electrode and said p-electrode such that when said selected electrode is an n-electrode the other one of said electrodes is a p-electrode and vice versa.
Claim 4
Dependent Claim
34 words
An optical semiconductor device according to claim 2, wherein said light output is radiated from a portion of a cleavage facet of said active region corresponding to said limited region of said active region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-19 | 1993-09-18 | 1994-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-19 | 1997-09-18 | 1998-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-19 | 2001-09-18 | 2002-03-20 | $7700.00 | Window Closed / Lapsed |