Apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process

Claim 1

In an apparatus for the formation of a functional deposited film on a substrate by means of a microwave plasma chemical vapor deposition process conducted in a substantially enclosed deposition chamber comprising a circumferential wall having upper and lower end portions thereof, each of said end portions being vacuum-sealed to a microwave introducing window to which a waveguide extending from a microwave power source is connected, wherein a first propagated microwave traveling from one of the microwave introducing windows into said deposition space meets an opposing second propagated microwave traveling from the opposing microwave introducing window, each of said first and second propagated microwaves containing, respectively, a first and second electric force component traveling along the path of each respective microwave and extending at a radial vector direction from the microwave propagating axis, said deposition chamber having a deposition space in which a supporting means for said substrate is installed, said deposition chamber being provided with the means for supplying a film-forming raw material gas and means for evacuating said deposition chamber, the improvement which comprises each said microwave introducing window having the same resonant mode, and each said waveguide being oriented such that the paths of said first and second microwaves meet in said deposition space wherein the said first and second electric force vectors are superposed forming a relative setting angle of 60° or 240° when viewed from the direction of the first propagating microwave and measured counter-clockwise from the second electric force vector to the first electric force vector.