US4905192A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory cell
Assignee: Toshiba Corp
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Filing: 1988-03-30
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Granted: 1990-02-27
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Expires: 2008-03-30
Abstract
Abstract A semiconductor memory device includes a memory cell array, a spare memory cell array, a first addressing circuit for designating an address of the memory cell array, a second addressing circuit for designating an address of the spare memory cell array, a drive circuit for activating a select line designated by each of the first and second addressing circuits, a program circuit for generating a predetermined output based on whether the memory cell array has a defect or fault or not, and a select circuit responsive to an output from the program circuit for supplying an activation signal to the designated select line at an earlier timing when there is no fault in the memory array cell, and supplying an activation signal delayed by a time necessary for the selection of the spare memory cell array when there is a fault in the memory cell array.
Inventors
- 👤 Kazutaka Nogami
- 👤 Takayasu Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:43
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C29/00; G11C29/70; G11C29/78; G11C29/84; G11C29/842
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
137 words
A semiconductor memory device comprising: a memory cell array having a spare memory cell array; first addressing means for designating an address of said memory cell array; second addressing means for designating an address of said spare memory cell array, said second addressing means being activated simultaneously with said first addressing means; drive means for activating a select line designated by each of said first and second addressing means; a program circuit for generating a predetermined output based on whether said memory cell array has a defect or fault or not; and a select circuit responsive to said output from said program circuit for supplying an activation signal delayed by a delay circuit to said designated select line for the selection of said spare memory cell array when there is a fault in said memory cell array.
Claim 2
Dependent Claim
137 words
A semiconductor memory device comprising: a memory cell array having a spare memory cell array; first addressing means for designating an address of said memory cell array; second addressing means for designating an address of said spare memory cell array, said second addressing means being activated simultaneously with said first addressing means; drive means for activating a select line designated by each of said first and second addressing means; a program circuit for generating a predetermined output based on whether said memory cell array has a defect or fault or not; and a select circuit responsive to said output from said program circuit for supplying an activation signal delayed by a delay circuit to said designated select line for the selection of said spare memory cell array when there is a fault in said memory cell array.
Claim 3
Dependent Claim
42 words
A semiconductor memory device according to claim 1, wherein said select circuit is a switch circuit which selects one of an activation signal and a delayed activation signal passed through said delay circuit, in accordance with an output from said program circuit.
Claim 4
Dependent Claim
32 words
A semiconductor memory device according to claim 1, wherein said program circuit has a fuse, the output of said program circuit being changed depending on whether said fuse was blown or not.
Claim 5
Dependent Claim
20 words
A semiconductor memory device according to claim 1, wherein said select line is a word line or a bit line.
Claim 6
Dependent Claim
137 words
A semiconductor memory device comprising: a memory cell array having a spare memory cell array; first addressing means for designating an address of said memory cell array; second addressing means for designating an address of said spare memory cell array, said second addressing means being activated simultaneously with said first addressing means; drive means for activating a select line designated by each of said first and second addressing means; a program circuit for generating a predetermined output based on whether said memory cell array has a defect or fault or not; and a variable delay circuit responsive to an output from said program circuit supplying an activation signal delayed by a delay circuit to said designated select line for the selection of said spare memory cell array when there is a fault in said memory cell array.
Claim 7
Dependent Claim
137 words
A semiconductor memory device comprising: a memory cell array having a spare memory cell array; first addressing means for designating an address of said memory cell array; second addressing means for designating an address of said spare memory cell array, said second addressing means being activated simultaneously with said first addressing means; drive means for activating a select line designated by each of said first and second addressing means; a program circuit for generating a predetermined output based on whether said memory cell array has a defect or fault or not; and a variable delay circuit responsive to an output from said program circuit supplying an activation signal delayed by a delay circuit to said designated select line for the selection of said spare memory cell array when there is a fault in said memory cell array.
Claim 8
Dependent Claim
141 words
A semiconductor memory device comprising: a memory cell array having a spare memory cell array; first addressing means for designating an address of said memory cell array; second addressing means for designating an address of said memory cell array; second addressing means for designating an address of said spare memory cell array, said second addressing means being activated simultaneously with said first addressing means; drive means for activating a select line designated by each of said first and second addressing means; a program circuit for generating a predetermined output based on whether said memory cell array has a defect or fault or not; and a programmable delay circuit responsive to said output for supplying an activation signal to said designated select line for the selection of said spare memory cell array when there is a fault in said memory cell array.
Claim 9
Dependent Claim
141 words
A semiconductor memory device comprising: a memory cell array having a spare memory cell array; first addressing means for designating an address of said memory cell array; second addressing means for designating an address of said memory cell array; second addressing means for designating an address of said spare memory cell array, said second addressing means being activated simultaneously with said first addressing means; drive means for activating a select line designated by each of said first and second addressing means; a program circuit for generating a predetermined output based on whether said memory cell array has a defect or fault or not; and a programmable delay circuit responsive to said output for supplying an activation signal to said designated select line for the selection of said spare memory cell array when there is a fault in said memory cell array.
Claim 10
Dependent Claim
44 words
A semiconductor memory device according to claim 6, wherein said programmable delay circuit has a fuse, one of a series of delay stages of said programmable delay circuit being caused to undergo its delay operation depending on whether said fuse was blown or not.
References Cited (Backward Citations)
US4723227A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-26 | 1993-08-28 | 1994-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-26 | 1997-08-28 | 1998-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-26 | 2001-08-28 | 2002-02-27 | $7700.00 | Window Closed / Lapsed |