US4903341A
Expired / Lapsed
US
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Semiconductor optical heterodyne detector
Assignee: McDonnell Douglas Corp
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Filing: 1987-12-28
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Granted: 1990-02-20
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Expires: 2007-12-28
Abstract
Abstract There is provided by this invention an optical heterodyning device comprised of a semiconductor heterostructure having a forward biased electrode connected thereto for optically mixing an input signal frequency with a local oscillating frequency in the separate confined laser cavity and a reverse biase electrode connected thereto for detecting the intermediate frequency produced. The local oscillator provides preamplification in the laser cavity and can be effectively phase locked to the input signal frequency.
Inventors
- 👤 Robert R. Rice
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:09
CPC Classifications
H; H04; H04B; H04B10/00; H04B10/60; H04B10/61; H04B10/64
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
105 words
A semiconductor laser heterodyne detector, comprising: (a) a semiconductor heterostructure means for generating optical radiation having connected thereto an optical signal input; (b) forward biasing means for applying a variable voltage to a first electrode section covering approximately the length of a laser cavity of the semiconductor heterostructure to generate optical radiation that mixes with the optical input signal frequency creating an intermediate frequency; (c) reverse biasing means for applying a reverse biased voltage to a second electrode covering a short section of the cavity of the semiconductor heterostructure means to detect an output current consisting of ac and dc components at the intermediate frequency.
Claim 2
Dependent Claim
105 words
A semiconductor laser heterodyne detector, comprising: (a) a semiconductor heterostructure means for generating optical radiation having connected thereto an optical signal input; (b) forward biasing means for applying a variable voltage to a first electrode section covering approximately the length of a laser cavity of the semiconductor heterostructure to generate optical radiation that mixes with the optical input signal frequency creating an intermediate frequency; (c) reverse biasing means for applying a reverse biased voltage to a second electrode covering a short section of the cavity of the semiconductor heterostructure means to detect an output current consisting of ac and dc components at the intermediate frequency.
Claim 3
Dependent Claim
39 words
A semiconductor laser heterodyne detector as recited in claim 1 further comprising a phase locked loop means connected between the reverse biasing means and the forward biasing means for phase locking an oscillating voltage to the optical input signal.
Claim 4
Dependent Claim
33 words
A semiconductor laser heterodyne detector as recited in claim 1 further comprising means connected to the semiconductor heterostructure means for operating the semiconductor heterostructure means in a longitudinal mode for lower noise levels.
Claim 5
Dependent Claim
37 words
A semiconductor laser heterodyne detector as recited in claim 3 wherein the means for operating the semiconductor heterostructure in a longitudinal mode comprises using external etalon section, mounted a predetermined distance from an end of the heterostructure.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-19 | 1993-08-21 | 1994-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-19 | 1997-08-21 | 1998-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-19 | 2001-08-21 | 2002-02-20 | $7700.00 | Window Closed / Lapsed |